STPSC2H065B-TR

STPSC2H065 Datasheet 650 V, 2 A high surge silicon carbide power Schottky diode Features A K • • • • • No reverse recovery charge in application current range Switching behavior independent of temperature High forward surge capability ECOPACK2 compliant component Power efficient product Applications • • • • • Product label Switch mode power supply PFC "DC/DC" converters LLC topologies Boost diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC2H065 SiC diode will boost performance in hard switching conditions. Product status STPSC2H065 Product summary Symbol Value IF(AV) 2A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.38 V DS12989 - Rev 1 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STPSC2H065 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current 6.5 A Tc = 160 °C(1), DC 2 A tp = 10 ms sinusoidal, Tc = 25 °C 20 tp = 10 ms sinusoidal, Tc = 125 °C 18 tp = 10 µs square, Tc = 25 °C 140 Tc = 160 °C (1), Tj = 175 °C, δ = 0.1 8.5 A IF(AV) IFSM Average forward current Surge non repetitive forward current A IFRM Repetitive peak forward current Tstg Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Tj 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Symbol Rth(j-c) Parameter Typ. value Max. value Unit 2.50 3.50 °C/W Junction to case For more information, please refer to the following application notes related to the power losses : • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 2 A Min. Typ. Max. - 1.5 20 - 17 84 - 1.38 1.55 - 1.60 1.95 Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 μs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.001 x IF(AV) + 0.474 x IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS12989 - Rev 1 page 2/10 STPSC2H065 Characteristics Table 4. Dynamic electrical characteristics Symbol Qcj(1) Cj 1. DS12989 - Rev 1 Parameter Total capacitive charge Total capacitance Test conditions Typ. Unit VR = 400 V 7.9 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 135 VR = 400 V, Tc = 25 °C, F = 1 MHz 14 pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 3/10 STPSC2H065 Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) IF(A) 4.0 IF(A) 20 Pulse test : tp=500µs Pulse test : tp=500µs 18 3.5 3.0 16 Ta=100 °C 2.5 Ta=25 °C 14 Ta=150 °C 12 2.0 10 Ta=175 °C Ta=25 °C 1.5 Ta=100 °C 8 Ta=150 °C 6 1.0 4 0.5 VF (V) 0.0 Ta=175 °C 2 VF (V) 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) 0 1 2 3 4 5 6 7 Figure 4. Peak forward current versus case temperature I M (A) IR(µA) 25 1.E+02 T δ =0.1 Tj=175 °C 20 tp δ=tp/T 1.E+01 15 Tj=150 °C δ =0.3 1.E+00 1.E-01 Tj=25 °C VR(V) 150 DS12989 - Rev 1 200 250 300 350 400 450 500 550 600 δ =0.5 5 δ =1 δ =0.7 T C(°C) 0 1.E-02 100 10 650 0 25 50 75 100 125 150 175 page 4/10 STPSC2H065 Characteristics (curves) Figure 5. Junction capacitance versus reverse voltage applied (typical values) 150 Figure 6. Relative variation of thermal impedance junction to case versus pulse duration Cj (pF) Zth(j-c)/Rth(j-c) 1.0 F=1 MHz VOSC=30 mVRMS Tj=25 °C 125 0.9 0.8 0.7 100 0.6 75 0.5 0.4 50 0.3 0.2 25 VR(V) 0 0.1 Single pulse 0.1 tp (s) 0.0 1.0 10.0 100.0 1000.0 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Figure 8. Total capacitive charges versus reverse voltage applied (typical values) IFSM (A) Q Cj (nC) 1.E+03 8 7 6 5 1.E+02 4 Ta=25 °C 3 Ta=125 °C 2 1 VR (V) t p (s) 0 1.E+01 1.E-05 DS12989 - Rev 1 1.E-04 1.E-03 1.E-02 0 50 100 150 200 250 300 350 400 page 5/10 STPSC2H065 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 DPAK package information • Epoxy meets UL94, V0 Figure 9. DPAK package outline A E c2 b4 E1 L2 D1 H D L4 A1 b (2x) e R e1 c Seating plane A2 (L1) L V2 0.25 DS12989 - Rev 1 Gauge plane page 6/10 STPSC2H065 DPAK package information Table 5. DPAK mechanical data Dimensions Dim. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.205 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 D1 4.95 5.25 0.195 E 6.40 6.60 0.252 E1 4.60 4.70 4.80 0.181 0.185 0.189 e 2.159 2.286 2.413 0.085 0.090 0.095 e1 4.445 4.572 4.699 0.175 0.180 0.185 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.059 (L1) 2.60 2.80 3.00 0.102 0.110 0.118 L2 0.65 0.80 0.95 0.026 0.031 0.037 L4 0.60 1.00 0.024 R V2 5.10 0.201 0.207 0.260 0.039 0.20 0.008 0° 8° 0° 8° 1. Inches dimensions given for reference only Figure 10. DPAK recommended footprint (dimensions are in mm) 6.3 6.1 10.7 2.8 1.8 min. B 1.5 4.572 A The device must be positioned within DS12989 - Rev 1 page 7/10 STPSC2H065 Ordering Information 3 Ordering Information Table 6. Ordering information DS12989 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode STPSC2H065B-TR PSC2 H065 DPAK 0.35 g 2500 Tape and reel page 8/10 STPSC2H065 Revision history Table 7. Document revision history DS12989 - Rev 1 Date Version 25-Apr-2019 1 Changes First issue. page 9/10 STPSC2H065 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS12989 - Rev 1 page 10/10