STPSC2H12B-TR1

STPSC2H12 1200 V power Schottky silicon carbide diode Datasheet - production data Description A K K K A K A K DPAK HV 2L Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. TO-220AC Features       No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating Tj from -40 °C to 175 °C Low VF ECOPACK®2 compliant January 2017 The SiC diode, available in TO-220AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Table 1: Device summary DocID030271 Rev 1 This is information on a product in full production. Symbol Value IF(AV) 2A VRRM 1200 V Tj(max.) 175 °C VF(typ.) 1.35 V 1/10 www.st.com Characteristics 1 STPSC2H12 Characteristics Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 10 A A IF(AV) Average forward current TC = 160 °C, DC current TC = 120 °C, DC current 2 5 IFRM Repetitive peak forward current TC = 160 °C, Tj = 175 °C, δ = 0.1 9 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal tp = 10 µs square Tstg Tj A TC = 25 °C 15 TC = 150 °C 13 TC = 25 °C 105 A Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Table 3: Thermal parameters Symbol Rth(j-c) Parameter Typ. Max. Unit 1.9 2.7 °C/W Min. Typ. Max. Unit - 1 12 - 6 80 - 1.35 1.50 - 1.75 2.25 Junction to case Table 4: Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C VR = VRRM Tj = 150 °C Tj = 25 °C IF = 2 A Tj = 150 °C µA V Notes: (1)Pulse test: tp = 10 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the maximum conduction losses, use the following equation: P = 1.12 x IF(AV) + 0.565 x IF2(RMS) Table 5: Dynamic electrical characteristics Symbol Parameter QCj(1) Total capacitive charge Cj Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 15.6 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 190 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 13 - Notes: (1)Most 2/10 𝑉 accurate value for the capacitive charge: 𝑄𝑐𝑗 (𝑉𝑅 ) = ∫0 𝑅 𝐶𝑗 (𝑉)𝑑𝑉 DocID030271 Rev 1 pF STPSC2H12 1.1 Characteristics Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values) Figure 2: Reverse leakage current versus reverse voltage applied (typical values) 1.E+01 IF(A) 4 IR(µA) Pulse test : tp = 500 µs 1.E+00 3 Tj = 150 °C 1.E-01 2 Tj = 25 °C Ta = 150 °C Ta = 25 °C 1.E-02 1 1.E-03 VF(V) VR(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.E-04 0 Figure 3: Peak forward current versus case temperature 35 Figure 4: Junction capacitance versus reverse voltage applied (typical values) I M (A) Cj (pF) 200 T δ = 0.1 100 200 300 400 500 600 700 800 900 1000 1100 1200 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 180 30 δ = tp/T tp 25 160 140 20 120 δ = 0.3 100 δ = 0.5 15 80 60 10 δ= 1 5 40 δ = 0.7 20 TC(°C) VR(V) 0 0 0 25 50 75 100 125 150 175 0.1 10.0 100.0 1000.0 10000.0 Figure 6: Non- repetitive peak surge forward current versus pulse duration (sinusoidal waveform) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration 1.0 1.0 Zth(j-c) /Rth(j-c) 1.E+03 IFSM(A) 0.9 0.8 0.7 0.6 0.5 1.E+02 Ta = 25 °C 0.4 0.3 Ta = 150 °C 0.2 Single pulse t p(s) 0.1 0.0 1.E-05 t p(s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E-05 DocID030271 Rev 1 1.E-04 1.E-03 1.E-02 3/10 Characteristics STPSC2H12 Figure 7: Total capacitive charges versus reverse voltage applied (typical values) 16 Figure 8: Thermal resistance junction to ambient versus copper surface under tab on epoxy printed board FR4, eCu = 35 µm (typical values) Qcj(nC) 100 14 90 12 80 Rth(j-a)(°C/W) DPAK HV 2L 70 10 60 8 50 6 40 4 30 2 20 VR(V) SCu(cm²) 10 0 0 100 200 300 400 500 600 700 800 0 0 4/10 DocID030271 Rev 1 5 10 15 20 25 30 35 40 STPSC2H12 2 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.     2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 N·m Maximum torque value: 0.7 N·m TO-220AC rectifier package information Figure 9: TO-220AC package outline DocID030271 Rev 1 5/10 Package information STPSC2H12 Table 6: TO-220AC package mechanical data Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M Diam 6/10 Inches 2.6 typ. 3.75 0.102 typ. 3.85 DocID030271 Rev 1 0.147 0.151 STPSC2H12 2.2 Package information DPAK HV 2L package information Figure 10: DPAK HV 2L package outline DocID030271 Rev 1 7/10 Package information STPSC2H12 Table 7: DPAK HV 2L package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 2.16 2.29 2.40 0.085 0.090 0.094 A1 0.06 0.08 0.13 0.002 0.003 0.005 b 0.71 0.76 1.07 0.028 0.029 0.030 b3 5.004 5.10 5.21 0.197 0.201 0.205 c 0.46 0.51 0.56 0.018 0.020 0.025 c2 0.76 0.81 0.86 0.029 0.032 0.034 D 5.97 6.10 6.22 0.235 0.240 0.245 D1 5.84 REF 0.230 REF E 6.48 6.60 6.73 0.255 0.260 0.265 E1 4.95 5.08 5.21 0.195 0.200 0.205 e 2.29 REF 0.90 REF H 9.70 9.83 10.08 0.382 0.387 0.397 L 1.02 1.14 1.40 0.040 0.045 0.055 L3 L4(1) 1.14 0.000 M 0.15 0.045 0.000 7° P 7° 5° Notes: (1)Maximum plastic protrusion Figure 11: Footprint (dimensions in mm) 8/10 0.006 DocID030271 Rev 1 5° STPSC2H12 3 Ordering information Ordering information Table 8: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STPSC2H12D STPSC2H12D TO-220AC 1.86 g 50 Tube STPSC2H12B-TR1 STPSC 2H12 DPAK HV 2L 0.368 g 2500 Tape and reel Revision history Table 9: Document revision history Date Revision 24-Jan-2017 1 Changes Initial release. DocID030271 Rev 1 9/10 STPSC2H12 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 10/10 DocID030271 Rev 1