STPSC2H12B2Y-TR

STPSC2H12-Y Datasheet Automotive 1200 V, 2 A power Schottky silicon carbide diode Features Product label • • • • • AEC-Q101 qualified PPAP capable No or negligible reverse recovery High forward surge capability Operating Tj from -40 °C to 175 °C • • Creepage distance of 3 mm as per IEC 60664-1 ECOPACK2 compliant component Applications • • • Bootstrap function of SiC MOS-FETS Snubber diode Switching diode Description Product status link STPSC2H12-Y Product summary IF(AV) 2A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in boot strap, snubber circuits, or clamping functions of SiC MOS-FETs, the STPSC2H12-Y diode will help designers getting the best possible performance of their controlled switches in all conditions. This rectifier will enhance the performance of the targeted application. Its improved creepage distance ensures the compatibility with industrial and automotive creepage standards. DS13118 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com STPSC2H12-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 10 A Tc = 160 °C, DC (1) 2 Tc = 120 °C, DC (1) 5 IF(AV) Average forward current IFRM Repetitive peak forward current IFSM Surge non repetitive forward current Tstg Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Tj Tc = 160 °C, Tj = 175 °C, δ = 0.1, fw > 10 kHz 9 tp = 10 ms sinusoidal, Tc = 25 °C 15 tp = 10 ms sinusoidal, Tc = 150 °C 13 A A A 1. Value based on Rth(j-c)max. Table 2. Thermal resistance parameters Symbol Rth(j-c) Value Parameter Typ. Max. 1.9 2.7 Junction to case Unit °C/W For more information, please refer to the following application note: • AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 2 A Min. Typ. Max. - 1 12 - 6 80 - 1.35 1.50 - 1.75 2.25 Unit µA V 1. Pulse test: tp = 10 ms, δ < 2% 2. Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.12 x IF(AV) + 0.565 x IF 2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode Table 4. Dynamic electrical characteristics Symbol QCj DS13118 - Rev 2 (1) Parameter Total capacitive charge Test conditions VR = 800 V Min. Typ. Max. Unit - 15.6 - nC page 2/10 STPSC2H12-Y Characteristics (curves) Symbol Parameter Cj 1. Test conditions Total capacitance Min. Typ. Max. VR = 0 V, Tc = 25 °C, F = 1 MHz - 190 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 13 - Unit pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 Characteristics (curves) 1.1 Figure 1. Forward voltage drop versus forward current (typical values) IF(A) 4 1.E+01 Pulse test : tp = 500 µs Ta = -40 °C 3 Figure 2. Reverse leakage current versus reverse voltage applied (typical values) Ta = 25 °C IR(µA) 1.E+00 Tj = 150 °C 1.E-01 Ta = 150 °C 2 Tj = 25 °C 1.E-02 1 1.E-03 VF(V) 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 Figure 3. Peak forward current versus case temperature (fw > 10 kHz) 35 VR(V) 1.E-04 300 400 500 600 700 200 Cj(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 180 30 160 25 800 900 1000 1100 1200 Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM (A) δ = 0.1 100 200 140 20 δ = 0.3 15 δ = 0.5 120 100 80 60 10 δ= 1 5 40 δ = 0.7 20 TC(°C) 0 0 DS13118 - Rev 2 25 50 75 100 VR(V) 0 125 150 175 0.1 1.0 10.0 100.0 1000.0 10000.0 page 3/10 STPSC2H12-Y Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c) /Rth(j-c) 1.0 Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 IFSM(A) 0.9 0.8 0.7 0.6 1.E+02 0.5 Ta = 25 °C 0.4 0.3 Ta = 150 °C 0.2 Single pulse 0.1 t p (s) 0.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 t p (s) 1.E+00 Figure 7. Total capacitive charges versus reverse voltage applied (typical values) 16 1.E+01 1.E-05 1.E-03 1.E-02 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 70 μm) QCj(nC) Rth(j-a) (°C/W) 100 14 1.E-04 DPAK HV 90 12 80 10 70 60 8 50 6 40 4 30 20 2 VR(V) 0 0 100 200 300 400 500 600 700 10 800 SCu (cm²) 0 0 DS13118 - Rev 2 5 10 15 20 25 30 35 40 page 4/10 STPSC2H12-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 DPAK HV 2L package information • • Epoxy meets UL 94,V0 Cooling method: by conduction (C) Figure 9. DPAK HV 2L package outline Note: DS13118 - Rev 2 This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. page 5/10 STPSC2H12-Y DPAK HV 2L package information Table 5. DPAK HV 2L package mechanical data Dimensions Millimeters Ref. Inches (for reference only) Min. Typ. Max. Min. Typ. Max. A 2.20 2.29 2.40 0.086 0.090 0.095 A1 0.90 1.10 0.035 0.044 A2 0.03 0.23 0.001 0.010 b 0.64 0.76 0.90 0.025 0.030 0.036 b4 5.20 5.10 5.40 0.204 0.201 0.213 c 0.45 0.60 0.017 0.024 c2 0.48 0.60 0.018 0.024 D 6.00 6.20 0.236 0.245 D1 4.60 4.80 0.181 E 6.40 6.60 0.251 E1 4.95 5.10 5.25 0.194 0.201 0.207 e 2.16 2.28 2.40 0.085 0.090 0.095 e1 4.40 4.60 0.173 0.182 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.060 L1 2.60 2.80 3.00 0.102 0.110 0.119 L2 0.65 0.80 0.95 0.025 0.031 0.038 V2 0° 8° 0° 4.70 0.185 0.189 0.260 8° Figure 10. Footprint (dimensions in mm) Note: DS13118 - Rev 2 For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173. page 6/10 STPSC2H12-Y DPAK HV 2L package information 2.1.1 Creepage distance between anode and cathode Table 6. Creepage distance between anode and cathode Symbol CdA-K Note: DS13118 - Rev 2 Parameter Minimum creepage distance between A and K DPAK HV Value Unit 3.0 mm DPAK HV creepage distance (anode to cathode) =3.0 mm min. (refer to IEC 60664-1) page 7/10 STPSC2H12-Y Ordering information 3 Ordering information Table 7. Ordering information DS13118 - Rev 2 Order code Marking Package Weight Base qty. Delivery mode STPSC2H12B2Y-TR PSC2 H12Y DPAK HV 0.350 g 2500 Tape and reel page 8/10 STPSC2H12-Y Revision history Table 8. Document revision history DS13118 - Rev 2 Date Revision Changes 19-Sep-2019 1 Initial release. 21-Sep-2021 2 Updated Figure 2. page 9/10 STPSC2H12-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS13118 - Rev 2 page 10/10