STPSC30H12CWL

STPSC30H12C 1200 V power Schottky silicon carbide diode Datasheet - production data Description A1 The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. K A2 K A1 Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. A2 TO-247 LL Table 1: Device summary Features      No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating Tj from -40 °C to 175 °C ECOPACK®2 compliant February 2017 DocID030339 Rev 1 This is information on a product in full production. Symbol Value IF(AV) 2 x 15 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V 1/9 www.st.com Characteristics 1 STPSC30H12C Characteristics Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) IF(RMS) Forward rms current Value Unit 1200 V 38 A TC = 150 °C DC current IF(AV) TC = 135 °C DC current Average forward current 15/30 Per diode/per device 21/42 TC = 25 °C DC current Repetitive peak forward current IFRM Surge non repetitive forward current IFSM Tstg Tj 38/76 TC = 150 °C,Tj = 175 °C, δ = 0.1 tp = 10 ms sinusoidal tp = 10 µs square A 61 A TC = 25 °C 105 TC = 150 °C 90 TC = 25 °C 630 A Storage temperature range -65 to +175 °C Operating junction temperature range -40 to +175 °C Table 3: Thermal resistance parameters Symbol Typ. value Max. value Per diode 0.50 0.70 Per device 0.25 0.35 Parameter Junction to case Rth(j-c) Unit °C/W Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 15 A Notes: (1)Pulse test: tp = 10 ms, δ < 2% (2)Pulse test: tp = 500 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.09 x IF(AV) + 0.0775 x IF2(RMS) 2/9 DocID030339 Rev 1 Min. Typ. Max. - 7.5 90 - 45 600 - 1.35 1.50 - 1.75 2.25 Unit µA V STPSC30H12C Characteristics Table 5: Dynamic electrical characteristics (per diode) Symbol Parameter QCj(1) Total capacitive charge Cj Total capacitance Test conditions Min. Typ. Max. Unit VR = 800 V - 94 - nC VR = 0 V, Tc = 25 °C, F = 1 MHz - 1200 - VR = 800 V, Tc = 25 °C, F = 1 MHz - 78 - pF Notes: (1)Most 𝑉 accurate value for the capacitive charge: 𝑄𝑐𝑗 (𝑉𝑅 ) = ∫0 𝑅 𝐶𝑗 (𝑉)𝑑𝑉 DocID030339 Rev 1 3/9 Characteristics 1.1 STPSC30H12C Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values, per diode) Figure 2: Reverse leakage current versus reverse voltage applied (typical values, per diode) IF(A) 30 IR (µA) 1.E+02 Pulse test : t p = 500 µs 25 1.E+01 Tj = 150 °C 20 1.E+00 Ta = 150 °C Ta = 25 °C 15 Tj = 25 °C 1.E-01 10 1.E-02 5 VR (V) VF(V) 0 1.E-03 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 3: Peak forward current versus case temperature (per diode) 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode) IM (A) 140 Cj(pF) T 1200 δ = 0.1 120 δ = tp/T F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C tp 1000 100 800 80 δ = 0.3 600 δ = 0.5 60 400 40 200 δ = 0.7 δ= 1 20 VR (V) Tc (°C) 0 0 0.1 0 25 50 75 100 125 150 1.0 10.0 100.0 1000.0 10000.0 175 Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) IFSM (A) 1.0 1.E+03 0.9 Ta = 25 °C 0.8 0.7 0.6 Ta = 150 °C 0.5 1.E+02 0.4 0.3 0.2 0.1 Single pulse 0.0 1.E-05 4/9 t p (s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp (s) 1.E+01 1.E-05 DocID030339 Rev 1 1.E-04 1.E-03 1.E-02 STPSC30H12C Characteristics Figure 7: Total capacitive charges versus reverse voltage applied (typical values, per diode) Qcj(nC) 100 80 60 40 20 VR(V) 0 0 100 200 300 400 DocID030339 Rev 1 500 600 700 800 5/9 Package information 2 STPSC30H12C Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.    2.1 Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.9 to 1.2 N·m TO-247 long leads package information Figure 8: TO-247 long leads package outline 6/9 DocID030339 Rev 1 STPSC30H12C Package information Table 6: TO-247 long leads package mechanical data mm. Inches Dim. Min. Typ. Max. Min. Typ. Max. A 4.90 5.15 0.192 0.202 D 1.85 2.10 0.072 0.082 E 0.55 0.67 0.021 0.026 F 1.07 1.32 0.042 0.051 F1 1.90 2.38 0.074 0.093 F2 2.87 3.38 0.110 G 10.90 BSC 0.133 0.429 BSC H 15.77 16.02 0.620 0.630 L 20.82 21.07 0.810 0.820 L1 4.16 4.47 0.163 0.175 L2 5.49 5.74 0.216 0.225 L3 20.05 20.30 0.789 0.799 L4 3.68 3.93 0.144 0.154 L5 6.04 6.29 0.237 0.247 M 2.25 2.55 0.088 0.100 V 10° 10° V1 3° 3° V3 20° 20° DIA 3.55 3.66 DocID030339 Rev 1 0.139 0.143 7/9 Ordering information 3 STPSC30H12C Ordering information Table 7: Ordering information 4 Order code Marking Package Weight Base qty. Delivery mode STPSC30H12CWL STPSC30H12CWL TO-247 LL 6.09 g 30 Tube Revision history Table 8: Document revision history 8/9 Date Revision 15-Feb-2017 1 Changes Initial release. DocID030339 Rev 1 STPSC30H12C IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID030339 Rev 1 9/9