STPSC6TH13TI

STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description  The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.   Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.  .  Table 1. Device summary (per diode)  ,QVXODWHG72$% Symbol Value IF(AV) 6A VRRM 650 V Tj (max.) 175 °C Features  No or negligible reverse recovery  Switching behavior independent of temperature  Suited for specific bridge-less topologies  High forward surge capability  Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms January 2016 This is information on a product in full production. DocID024696 Rev 3 1/8 www.st.com 8 Characteristics 1 STPSC6TH13TI Characteristics Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified (per diode) Symbol Parameter Value Unit 650 V 22 A 6 A 60 52 400 A Repetitive peak reverse voltage VRRM IF(RMS) Forward rms current (1) Average forward current Tc = 100 °C , DC current IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs sinusoidal, Tc = 25 °C IFRM Repetitive peak forward current Tc = 100 °C(1),  = 0.1 25 A Tstg Storage temperature range -55 to +175 °C Operating junction temperature (2) -40 to +175 °C IF(AV) Tj 1. Value based on Rth(j-c) max (per diode) 2. dPtot --------------dTj 1 - condition to avoid thermal runaway for a diode on its own heatsink  ------------------------Rth  j – a  Table 3. Thermal resistance Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Typ. Max. Per diode 3.8 4.8 Total 2.05 2.55 Unit °C/W 0.3 °C/W When the diodes are used simultaneously: Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 6 A Min. Typ. Max. - 5 60 - 50 250 - 1.56 1.75 - 1.98 2.5 µA V 1. Pulse test: tp = 10 ms,  < 2% 2. Pulse test: tp = 500 µs,  < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.192 x IF2(RMS) 2/8 DocID024696 Rev 3 Unit STPSC6TH13TI Characteristics Table 5. Dynamic electrical characteristics Symbol Parameter Qcj(1) Test conditions Total capacitive charge Cj Total capacitance Typ. Unit VR = 400 V 18 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 300 VR = 400 V, Tc = 25 °C, F = 1 MHz 30 1. Most accurate value for the capacitive charge: pF 9287 œ 4FM FMY5GY5  Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level, per diode) current (typical values, high level, per diode)  ,)0 $ ,)0$  3XOVHWHVWWS —V 3XOVHWHVWWS —V   7D  ƒ&   7D  ƒ& 7D  ƒ& 7D  ƒ&   7D  ƒ& 7D  ƒ&   7D  ƒ&   7D  ƒ& 9)09          Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode) ( 9)09  ,5 —$        ,0$ 7    WS7  (  Figure 4. Peak forward current versus case temperature (per diode)  7M  ƒ&  WS  7M  ƒ&   (    ( 7M  ƒ&  95 9 (                   7& ƒ&   DocID024696 Rev 3        3/8 Characteristics STPSC6TH13TI Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode)  &MS) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration =WKMF5WKMF  ) 0+] 926& P9506 7M  ƒ&              6LQJOHSXOVH  959 W S V        Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) ( ,)60$ ( ( ( ( ( ( ( Figure 8. Total capacitive charges versus reverse voltage applied (typical values, per diode)  4&MQ&  7D  ƒ&  7D  ƒ& (   959 W SV  ( ( 4/8 ( ( (  DocID024696 Rev 3         STPSC6TH13TI 2 Package information Package information  Epoxy meets UL94, V0  Lead-free package  Cooling method: by conduction (C)  Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 Insulated TO-220AB package information Figure 9. Insulated TO-220AB package outline & % ‘, E / ) $ , O F D O D 0 E F H DocID024696 Rev 3 5/8 Package information STPSC6TH13TI Table 6. Insulated TO-220AB package mechanical data Dimensions Ref. Millimeters Min. A 15.20 a1 Max. Min. 15.90 0.598 3.75 Typ. Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.80 0.622 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 6/8 Typ. Inches 16.40 2.60 DocID024696 Rev 3 0.646 0.102 0.661 STPSC6TH13TI 3 Ordering information Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPSC6TH13TI STPSC 6TH13TI Insulated TO-220AB 2.3g 50 Tube Revision history Table 8. Document revision history Date Revision Changes 24-Jun-2013 1 First issue. 07-Nov-2013 2 Updated Figure 1 and Figure 2. 05-Jan-2016 3 Updated Table 7. Format updated to current standard. DocID024696 Rev 3 7/8 STPSC6TH13TI IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 8/8 DocID024696 Rev 3