STPSC8065
650 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
ECOPACK®2 compliant component
July 2017
Table 1: Device summary
DocID030730 Rev 2
This is information on a product in full production.
Symbol
Value
IF(AV)
8A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V
1/9
www.st.com
Characteristics
1
STPSC8065
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF(RMS)
Forward rms current
22
A
IF(AV)
Average forward current
TC = 150 °C(1), DC current
8
A
IFRM
Repetitive peak forward
current
Tc = 150 °C, Tj = 175 °C, δ = 0.1
36
A
tp = 10 ms sinusoidal, Tc = 25 °C
46
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 125 °C
38
tp = 10 µs square, Tc = 25 °C
200
Tstg
Storage temperature range
Tj
Operating junction
temperature(2)
A
-65 to +175
°C
-40 to +175
°C
Notes:
(1)Value
(2)(dP
based on Rth(j-c) max.
tot/dTj)
< (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Value
Symbol
Parameter
Unit
Junction to case
Rth(j-c)
Typ.
Max.
1.1
1.65
°C/W
Table 4: Static electrical characteristics
Symbol
IR(1)
Parameter
Test conditions
Reverse leakage current
Tj = 25 °C
Tj = 150 °C
VR = VRRM
Tj = 25 °C
VF(2)
Forward voltage drop
Tj = 150 °C
IF = 8 A
Tj = 175 °C
Notes:
(1)Pulse
test: tp = 5 ms, δ < 2%
(2)Pulse
test: tp = 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.95 x IF(AV) + 0.087 x IF2(RMS)
2/9
DocID030730 Rev 2
Min.
Typ.
Max.
-
2
105
-
20
750
-
1.30
1.45
-
1.45
1.65
-
1.50
Unit
µA
V
STPSC8065
Characteristics
Table 5: Dynamic electrical characteristics
Symbol
QCj(1)
Cj
Parameter
Test conditions
Total capacitive charge
Total capacitance
Typ.
Unit
VR = 400 V
28
nC
VR = 0 V, Tc = 25 °C, F = 1 MHz
540
VR = 400 V, Tc = 25 °C, F = 1 MHz
45
pF
Notes:
(1)Most
𝑉
accurate value for the capacitive charge: 𝑄𝑐𝑗 = ∫0 𝑂𝑈𝑇 𝐶𝐽 (𝑉𝑅 ) • 𝑑𝑉𝑅
DocID030730 Rev 2
3/9
Characteristics
1.1
STPSC8065
Characteristics (curves)
Figure 1: Forward voltage drop versus forward
current (typical values)
Figure 2: Reverse leakage current versus reverse
voltage applied (typical values)
IF (A)
IR (µA)
16
1.E+02
Pulse test : tp=500µs
14
Tj=175 °C
Ta=100 °C
1.E+01
12
Tj=150 °C
Ta=150 °C
10
1.E+00
8
Ta=25 °C
Ta=175 °C
1.E-01
6
4
Tj=25 °C
1.E-02
2
VR(V)
VF (V)
1.E-03
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
2.4
50
100 150 200 250 300 350 400 450 500 550 600 650
Figure 4: Junction capacitance versus reverse
voltage applied (typical values)
Figure 3: Peak forward current versus case
temperature
Cj(pF)
IM(A)
80
600
T
δ = 0.1
F=1 MHz
VOSC =30 mVRMS
Tj=25 °C
500
δ =tp/T
60
tp
400
δ = 0.3
40
300
δ = 0.5
200
20
δ = 0.7
δ=1
100
VR(V)
TC(°C)
0
0
0
25
50
75
100
125
150
175
0.1
Zth(j-c) /Rth(j-c)
10.0
100.0
1000.0
Figure 6: Non-repetitive peak surge forward
current versus pulse duration
(sinusoidal waveform)
Figure 5: Relative variation of thermal impedance
junction to case versus pulse duration
1.E+03
1.0
1.0
IFSM(A)
0.9
0.8
0.7
Ta=25 °C
0.6
0.5
1.E+02
Ta=125 °C
0.4
0.3
0.2
Single pulse
0.1
t p(s)
0.0
1.E-05
4/9
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E-05
DocID030730 Rev 2
t p(s)
1.E-04
1.E-03
1.E-02
STPSC8065
Characteristics
Figure 7: Total capacitive charges versus reverse voltage applied (typical values)
DocID030730 Rev 2
5/9
Package information
2
STPSC8065
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
2.1
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 N·m
Maximum torque value: 0.7 N·m
TO-220AC package information
Figure 8: TO-220AC package outline
6/9
DocID030730 Rev 2
Package information
STPSC8065
Table 6: TO-220AC package mechanical data
Dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L2
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
ØI
2.6 typ.
3.75
0.102 typ.
3.85
DocID030730 Rev 2
0.147
0.151
7/9
Ordering information
3
STPSC8065
Ordering information
Table 7: Ordering information
4
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STPSC8065D
PSC8065D
TO-220AC
1.86 g
50
Tube
Revision history
Table 8: Document revision history
8/9
Date
Revision
Changes
13-Jun-2017
1
First issue.
18-Jul-2017
2
Updated Table 4: "Static electrical characteristics"
DocID030730 Rev 2
STPSC8065
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© 2017 STMicroelectronics – All rights reserved
DocID030730 Rev 2
9/9
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