STPSC806_09

STPSC806 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1. TO-220AC STPSC806D Device summary IF(AV) VRRM Tj (max) QC (typ) 8A 600 V 175 °C 10 nC September 2009 Doc ID 16286 Rev 1 1/7 www.st.com 7 Characteristics STPSC806 1 Characteristics Table 2. Symbol VRRM IF(RMS) IF(AV) IFSM IFRM Tstg Tj Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Forward rms current Average forward current Surge non repetitive forward current Tc = 115 °C, δ = 0.5 tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C Value 600 18 8 30 24 120 30 -55 to +175 -40 to +175 Unit V A A A Repetitive peak forward current TC = 115 °C, Tj = 150 °C, δ = 0.1, Storage temperature range Operating junction temperature A °C °C Table 3. Symbol Rth(j-c) Thermal resistance Parameter Junction to case Maximum value 2.4 Unit °C/W Table 4. Symbol IR (1) VF (2) Static electrical characteristics Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM Min. IF = 8 A Typ. 20 150 1.4 1.6 Max. 100 µA 1000 1.7 V 2.1 Unit 1. tp = 10 ms, δ < 2% 2. tp = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.2 x IF(AV) + 0.113 x IF2(RMS) Table 5. Symbol Qc C Other parameters Parameter Total capacitive charge Test conditions Vr = 400 V, IF = 8 A dIF/dt = -200 A/µs Tj = 150 °C Vr = 0 V, Tc = 25 °C, F = 1 Mhz Vr = 400 V, Tc = 25 °C, F = 1 Mhz Typ. 10 450 pF 35 Unit nC Total capacitance 2/7 Doc ID 16286 Rev 1 STPSC806 Characteristics Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Reverse leakage current versus reverse voltage applied (maximum values) IFM(A) 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.E+04 IR(µA) 1.E+03 Tj=25 °C Tj=150 °C Tj=150 °C Tj=175 °C 1.E+02 Tj=175 °C 1.E+01 1.E+00 Tj=25 °C VFM(V) VR(V) 450 500 550 600 1.E-01 0 50 100 150 200 250 300 350 400 Figure 3. Peak forward current versus case temperature Figure 4. Junction capacitance versus reverse voltage applied (typical values) IM(A) 70 T C(pF) 350 300 tp F=1 MHz VOSC=30 mVRMS Tj=25 °C 60 50 40 δ=0.1 δ=tp/T 250 200 δ=0.3 30 20 10 0 0 δ=0.5 150 100 δ=1 δ=0.7 50 TC(°C) 25 50 75 100 125 150 175 VR(V) 0 1 10 100 1000 Doc ID 16286 Rev 1 3/7 Characteristics STPSC806 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Zth(j-c)/Rth(j-c) IFSM(A) 1.E+03 1.E+02 T =25 °C c T =125 °C c 1.E+01 Single pulse tp(s) tp(s) 1.E+00 1.E-01 1.E+00 1.E+01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 7. Total capacitive charges versus dIF/dt (typical values) 16 14 12 10 8 6 4 2 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 QC(nC) IF=8A VR=400 V Tj=150 °C 4/7 Doc ID 16286 Rev 1 STPSC806 Package information 2 Package information ● ● ● Epoxy meets UL94, V0 Cooling method: convection (C) Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 6. TO-220AC Dimensions Dimensions Ref. Millimeters Min. A H2 ØI L5 L7 C A Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 C D E F L6 L2 F1 G F1 L9 L4 F D H2 L2 L4 L5 16.40 typ. 13.00 2.65 15.25 6.20 3.50 14.00 2.95 15.75 6.60 3.93 0.645 typ. 0.511 0.104 0.600 0.244 0.137 0.551 0.116 0.620 0.259 0.154 M E G L6 L7 L9 M Diam. I 2.6 typ. 3.75 3.85 0.102 typ. 0.147 0.151 Doc ID 16286 Rev 1 5/7 Ordering information STPSC806 3 Ordering information Table 7. Ordering information Marking STPSC806D Package TO-220AC Weight 1.86 g Base qty 50 Delivery mode Tube Order code STPSC806D 4 Revision history Table 8. Date 24-Sep-2009 Document revision history Revision 1 First issue Changes 6/7 Doc ID 16286 Rev 1 STPSC806 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 16286 Rev 1 7/7