STPSC8H065CT

STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimized capacitive charge at turn-off behavior is independent of temperature. Especially suited for use in interleaved or bridgeless topologies, this dual-diode rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value  No or negligible reverse recovery IF(AV) 2x4A  Switching behavior independent of temperature VRRM 650 V Tj (max) 175 °C Features  High forward surge capability November 2013 This is information on a product in full production. DocID024808 Rev 2 1/8 www.st.com Characteristics 1 STPSC8H065C Characteristics Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current (1) IF(AV) Average forward current IFSM Surge non repetitive forward current IFRM Repetitive peak forward current Tstg Storage temperature range Operating junction Tj Value Unit 650 V 22 A Tc = 145 °C , DC Per diode 4 A Tc = 145 °C(2), DC Per device 8 A tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C 38 35 200 A Tc = 145 °C(1),Tj = 175 °C,  = 0.1 17 A -65 to +175 °C -40 to +175 °C temperature(3) 1. Value based on Rth(j-c) max (per diode) 2. Value based on Rth(j-c) max (per device) dPtot --------------dTj 3. 1 - condition to avoid thermal runaway for a diode on its own heatsink  ------------------------Rth  j – a  Table 3. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Typ. Max. Per diode 1.8 2.7 Per device 0.95 1.40 - 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Tests conditions Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = VRRM IF = 4 A Min. Typ. Max. - 3 40 - 35 170 - 1.56 1.75 - 1.98 2.5 µA V 1. tp = 10 ms,  < 2% 2. tp = 500 µs,  < 2% To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.288 x IF2(RMS) 2/8 DocID024808 Rev 2 Unit STPSC8H065C Characteristics Table 5. Dynamic electrical characteristics (per diode) Symbol Qcj(1) Parameter Test conditions Total capacitive charge Cj Total capacitance Typ. Unit VR = 400 V 12.5 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 200 VR = 400 V, Tc = 25 °C, F = 1 MHz 21 1. Most accurate value for the capacitive charge: pF VOUT Qcj = ∫0 cj(vR).dvR Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward current (typical values, low level, per diode) current (typical values, high level, per diode) 8 IFM(A) 40 Pulse test : tp=500µs IFM(A) Pulse test : tp=500µs 36 7 32 6 Ta=25 °C 28 5 Ta=150 °C 24 Ta=100 °C 4 Ta=25 °C 20 Ta=175 °C Ta=100 °C 16 3 12 2 Ta=150 °C 8 1 4 VFM(V) VFM(V) Ta=175 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Figure 3. Reverse leakage current versus reverse voltage applied (typical values, per diode) 1.E+02 0 3.5 IR(µA) 1 2 3 4 5 6 7 Figure 4. Peak forward current versus case temperature (per diode) 50 I M (A) d = 0.1 T Tj=175 °C 40 1.E+01 Tj=150 °C 8 d=tp/T tp 30 d = 0.3 1.E+00 d = 0.5 20 1.E-01 10 Tj=25 °C d=1 VR(V) 1.E-02 0 50 100 150 200 250 300 350 400 450 500 550 600 650 d = 0.7 TC(°C) 0 0 DocID024808 Rev 2 25 50 75 100 125 150 175 3/8 8 Characteristics STPSC8H065C Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode) 250 Cj (pF) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 1.0 F=1 MHz VOSC=30 mVRMS Tj=25 °C 200 0.9 0.8 0.7 0.6 150 0.5 0.4 100 0.3 0.2 50 VR(V) 0.1 10.0 0.0 1.E-05 0 0.1 1.0 100.0 1000.0 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) 1.E+03 IFSM (A) Single pulse tp(s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. Total capacitive charges versus reverse voltage applied (typical values, per diode) 14 Qcj (nC) 12 10 Ta=25 °C 8 1.E+02 Ta=125 °C 6 4 2 tp(s) 1.E-05 4/8 1.E-04 1.E-03 VR (V) 0 1.E+01 1.E-02 0 DocID024808 Rev 2 50 100 150 200 250 300 350 400 STPSC8H065C 2 Package information Package information  Epoxy meets UL94, V0  Cooling method: conduction (C)  Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at:www.st.com. ECOPACK® is an ST trademark. Figure 9. TO-220AB dimension definitions A E ∅P Resin gate 0.5 mm max. protrusion(1) F Q H1 D D1 L30 L20 b1 J1 L1 L b e e1 Resin gate 0.5 mm max. protrusion(1) c (1) Resin gate position accepted in each of the two position shown as well as the symmetrical opposites DocID024808 Rev 2 5/8 8 Package information STPSC8H065C Table 6. TO-220AB dimensions values Dimensions Ref. Millimeters Min. Max. Min. Max. A 4.40 4.60 0.17 0.18 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.60 0.62 D1 6/8 Inches 1.27 typ. 0.05 typ. E 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.24 0.26 J1 2.40 2.72 0.094 0.107 L 13 14 0.51 0.55 L1 3.50 3.93 0.137 0.154 L20 16.40 typ. 0.64 typ. L30 28.90 typ. 1.13 typ. P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 DocID024808 Rev 2 STPSC8H065C 3 Ordering information Ordering information Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode STPSC8H065CT STPSC8H065CT TO-220AB 1.86 g 50 Tube Revision history Table 8. Document revision history Date Revision Changes 24-Jun-2013 1 First issue. 07-Nov-2013 2 Updated Figure 1 and Figure 2. DocID024808 Rev 2 7/8 8 STPSC8H065C Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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