STPSC8H065G2Y-TR

STPSC8H065-Y Datasheet Automotive 650 V, 8 A high surge silicon carbide power Schottky diode Features A K K K A K A A NC NC D²PAK HV • • • • • • AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable VRRM guaranteed from -40 to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating) • ECOPACK®2 compliant component DPAK Applications Product label • On board charger Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Product status Especially suited for use in PFC applications, the STPSC8H065-Y SiC diode will boost performance in hard switching conditions. STPSC8H065-Y Product summary Symbol Value IF(AV) 8A VRRM 650 V Tj(max.) 175 °C DS12495 - Rev 3 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com STPSC8H065-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current IF(AV) IFSM Average forward current Surge non repetitive forward current Value Unit 650 V 22 A Tc = 145 °C(1), DC 8 A tp = 10 ms sinusoidal, Tc = 25 °C 75 Tj = -40 °C to + 175 °C tp = 10 ms sinusoidal, Tc = 125 °C 69 tp = 10 µs square, Tc = 25 °C 420 Tc = 145 °C (1), Tj = 175 °C, δ = 0.1 33 A A IFRM Repetitive peak forward current Tstg Storage temperature range -55 to +175 °C Operating junction temperature range -40 to +175 °C Tj 1. Value based on Rth(j-c) max. Table 2. Thermal resistance parameters Symbol Rth(j-c) Parameter Typ. value Max. value Unit 1.3 1.6 °C/W Junction to case Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C VR = VRRM Tj = 150 °C Tj = 25 °C IF = 8 A Tj = 150 °C Min. Typ. Max. - 7 80 - 65 335 - 1.45 1.65 - 1.7 2.05 Unit µA V 1. tp = 10 ms, δ < 2% 2. tp = 500 μs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.972 x IF(AV) + 0.135 x IF2(RMS) Table 4. Dynamic electrical characteristics Symbol (1) Qcj Cj 1. DS12495 - Rev 3 Parameter Total capacitive charge Total capacitance Test conditions Typ. Unit VR = 400 V 23.5 nC VR = 0 V, Tc = 25 °C, F = 1 MHz 414 VR = 400 V, Tc = 25 °C, F = 1 MHz 38 pF VR Most accurate value for the capacitive charge: Qcj VR =   ∫ C j V dV 0 page 2/12 STPSC8H065-Y Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Forward voltage drop versus forward current (typical values, low level) 16 IF(A) Figure 2. Forward voltage drop versus forward current (typical values, high level) 80 IF(A) Pulse test: tp = 500 µs 14 12 60 Ta = 100 °C 10 Ta = 150 °C 8 50 Ta = 25 °C 40 Ta = 175 °C 6 Ta = 100 °C 30 Ta = 25 °C Ta = 150 °C 4 20 2 10 Ta = -40 °C 0 0.0 0.5 1.0 1.5 VF(V) 2.0 2.5 3.0 Figure 3. Reverse leakage current versus reverse voltage applied (typical values) 1.E+03 Pulse test: tp = 500 µs 70 1.0 2.0 3.0 4.0 VF(V) 5.0 6.0 7.0 Figure 4. Peak forward current versus case temperature 80 IR(µA) Ta = 175 °C 0 0.0 IM(A) T δ = 0.1 70 Tj = 175 °C 1.E+02 δ =tp/T 60 tp 50 1.E+01 δ = 0.3 Tj = 150 °C 40 δ = 0.5 30 1.E+00 20 1.E-01 10 VR(V) 1.E-02 0 50 DS12495 - Rev 3 δ = 0.7 δ= 1 Tj = 25 °C 100 150 200 250 300 350 400 450 500 550 600 650 T C(°C) 0 0 25 50 75 100 125 150 175 page 3/12 STPSC8H065-Y Characteristics (curves) Figure 5. Junction capacitance versus reverse voltage applied (typical values) 500 Figure 6. Relative variation of thermal impedance junction to case versus pulse duration Cj (pF) 1.0 F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 450 400 0.9 0.8 350 0.7 300 0.6 250 0.5 200 0.4 150 0.3 100 0.2 50 1.0 10.0 100.0 0.0 1.E-05 1000.0 Figure 7. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.E+03 Single pulse 0.1 VR(V) 0 0.1 Zth(j-c) /Rth(j-c) t p (s) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 8. Total capacitive charges versus reverse voltage applied (typical values) IFSM(A) 28 Q Cj (nC) 24 Ta = 25 °C 20 16 Ta = 125 °C 1.E+02 12 8 4 1.E+01 1.E-05 VR(V) t p (s) 1.E-04 1.E-03 0 0 1.E-02 50 100 150 200 250 300 350 400 Figure 9. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35 µm) (D²PAK-HV) 80 Rth(j-a) (°C/W) D²PAK -HV 70 60 50 40 30 20 10 SCu (cm²) 0 0 DS12495 - Rev 3 5 10 15 20 25 30 35 40 page 4/12 STPSC8H065-Y Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 DPAK package information • • Epoxy meets UL94, V0 Lead-free packages Figure 10. DPAK package outline A E c2 b4 E1 L2 D1 H D L4 A1 b (2x) e R e1 c Seating plane A2 (L1) L V2 0.25 DS12495 - Rev 3 Gauge plane page 5/12 STPSC8H065-Y DPAK package information Table 5. DPAK mechanical data Dimensions Dim. Inches(1) Millimeters Min. Typ. Max. Min. Typ. Max. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 5.20 5.40 0.205 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 D1 4.95 5.25 0.195 E 6.40 6.60 0.252 E1 4.60 4.70 4.80 0.181 0.185 0.189 e 2.159 2.286 2.413 0.085 0.090 0.095 e1 4.445 4.572 4.699 0.175 0.180 0.185 H 9.35 10.10 0.368 0.398 L 1.00 1.50 0.039 0.059 (L1) 2.60 2.80 3.00 0.102 0.110 0.118 L2 0.65 0.80 0.95 0.026 0.031 0.037 L4 0.60 1.00 0.024 R V2 5.10 0.201 0.207 0.260 0.039 0.20 0.008 0° 8° 0° 8° 1. Inches dimensions given for reference only Figure 11. DPAK recommended footprint (dimensions are in mm) 6.3 6.1 10.7 2.8 1.8 min. B 1.5 4.572 A The device must be positioned within DS12495 - Rev 3 page 6/12 STPSC8H065-Y D²PAK high voltage package information 2.2 D²PAK HV package information Figure 12. D²PAK high voltage package outline A H C L1 L R L4 R M L2 0.25 gauge plane F (x2) E e H1 L3 A1 V DS12495 - Rev 3 page 7/12 STPSC8H065-Y D²PAK high voltage package information Table 6. D²PAK high voltage package mechanical data Ref. Dimensions Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8° Figure 13. D²PAK High Voltage footprint in mm 10,58 7,46 15,95 5,10 3,40 1,20 5,08 DS12495 - Rev 3 page 8/12 STPSC8H065-Y D²PAK high voltage package information 2.2.1 Creepage distance between anode and cathode Table 7. Creepage distance between anode and cathode Symbol Note: Parameter CdA-K1 Minimum creepage distance between A and K1 (with top coating) CdA-K2 Minimum creepage distance between A and K2 (without top coating) Value D²PAK HV 5.38 3.48 Unit mm D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (refer to IEC 60664-1) Figure 14. Creepage with top coating Figure 15. Creepage without top coating DS12495 - Rev 3 page 9/12 STPSC8H065-Y Ordering Information 3 Ordering Information Table 8. Ordering information DS12495 - Rev 3 Order code Marking Package Weight Base qty. Delivery mode STPSC8H065BY-TR PSC8H 065BY DPAK 0.32 g 2500 Tape and reel STPSC8H065G2Y-TR PSC8H065G2Y D²PAK HV 1.48 g 1000 Tape and reel page 10/12 STPSC8H065-Y Revision history Table 9. Document revision history Date Version Changes 08-Mar-2018 1 Initial release. 11-Sep-2018 2 Added D²PAK HV package. Updated Section 2.2.1 Creepage distance between anode and cathode. 06-Dec-2018 3 Minor text changes to improve readability. Updated title of document. DS12495 - Rev 3 page 11/12 STPSC8H065-Y IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12495 - Rev 3 page 12/12