STR2N2VH5

STR2N2VH5 N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5 Power MOSFET in a SOT-23 package Datasheet — production data Features Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W 3 • Low on-resistance RDS(on) 2 • High avalanche ruggedness 1 • Low gate drive power loss SOT-23 Applications • Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Table 1. Device summary Order code Marking Packages Packaging STR2N2VH5 STD1 SOT-23 Tape and reel July 2014 This is information on a product in full production. DocID023799 Rev 4 1/13 www.st.com Contents STR2N2VH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID023799 Rev 4 STR2N2VH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ±8 V ID(1) Drain current (continuous) at Tpcb = 25 °C 2.3 A ID (1) Drain current (continuous) at Tpcb = 100 °C 1.4 A Drain current (pulsed) 9.2 A Total dissipation at Tpcb = 25 °C 0.35 W IDM (1)(2) PTOT (1) Tstg Tj Storage temperature °C - 55 to 150 Max. operating junction temperature °C 1. This value is rated according to Rthj-pcb 2. Pulse width is limited by safe operating area Table 3. Thermal data Symbol Rthj-pcb(1) Parameter Thermal resistance junction-pcb max Value Unit 357 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec. DocID023799 Rev 4 3/13 13 Electrical characteristics 2 STR2N2VH5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current IGSS Gate-body leakage current Test conditions VGS = 0, ID = 1 mA Min. Typ. Max. 20 Unit V VGS = 0, VDS = 20 V 1 µA VGS = 0, VDS = 20 V, TC=125 °C 10 µA VDS = 0, VGS = ± 8 V ± 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance 0.7 V VGS = 4.5 V, ID = 2 A 0.025 0.03 Ω VGS = 2.5 V, ID = 2 A 0.031 0.04 Ω Min. Typ. Max. Unit - 367 - pF - 92 - pF - 16 - pF - 4.6 - nC - 0.9 - nC - 1 - nC Min. Typ. Max. Unit - 4.8 - ns - 14.4 - ns - 17 - ns - 4 - ns Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0, VDS = 16 V, f = 1 MHz VDD = 16 V, ID = 2 A, VGS = 4.5 V (see Figure 14) Table 6. Switching times Symbol td(on) Test conditions Voltage delay time tr (V) Voltage rise time td (off) Current fall time tf 4/13 Parameter VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 15 and Figure 18) Crossing time DocID023799 Rev 4 STR2N2VH5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 2.3 A ISDM (1) Source-drain current (pulsed) - 9.2 A VSD (2) Forward on voltage VGS = 0, ISD = 2 A - 1.1 V trr Reverse recovery time - 10 ns Qrr Reverse recovery charge - 24 nC IRRM Reverse recovery current ISD = 2 A, di/dt = 100 A/µs VDD = 16 V, Tj = 150 °C (see Figure 18) - 4.8 A ISD 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID023799 Rev 4 5/13 13 Electrical characteristics 2.1 STR2N2VH5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18126v1 ID (A) AM18127v1 K δ=0.5 0.2 0.1 10 -1 10 100µs s ai r e n) s a DS(o i h R nt n i max tio ra by e d Op ite Lim 1 0.05 1ms 10ms 0.02 Single pulse Tj=150°C Tpcb=25°C Single pulse 0.1 0.1 1 pcb 0.01 10 -2 VDS(V) 10 Figure 4. Output characteristics 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s) Figure 5. Transfer characteristics AM18128v1 ID (A) VGS=2.5, 3.5, 4.5, 5.5, 6.5 V AM18129v1 ID (A) VDS=4V 20 20 1.5V 16 16 12 12 8 8 4 4 0.5V 0 0 0 2 1 3 4 VDS(V) Figure 6. Gate charge vs gate-source voltage AM18130v1 VGS (V) VDD=10V ID=2A 0.2 0 0.4 0.6 0.8 1 1.2 VGS(V) Figure 7. Static drain-source on-resistance AM18132v1 RDS(on) (mΩ) VGS=4.5V 26 6 25.6 25.2 4 24.8 2 24.4 0 0 6/13 24 2 4 6 Qg(nC) DocID023799 Rev 4 1 1.5 2 2.5 3 3.5 ID(A) STR2N2VH5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM18133v1 C (pF) AM18134v1 VGS(th) (norm) 1.2 ID=250µA Ciss 1 0.8 100 Coss 0.6 0.4 0.2 Crss 0 -55 -30 -5 10 0 4 8 12 16 VDS(V) Figure 10. Normalized on-resistance vs temperature AM18135v1 RDS(on) 20 45 70 95 120 TJ(°C) Figure 11. Normalized V(BR)DSS vs temperature AM18136v1 V(BR)DSS (norm) (norm) ID=2A VGS=10V 1.6 ID=1mA 1.1 1.4 1.2 1.05 1 0.8 1 0.6 0.4 0.95 0.2 0 -55 -30 -5 20 45 70 95 120 TJ(°C) 0.9 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM18137v1 VSD (V) TJ=-55°C 0.9 TJ=25°C 0.8 0.7 TJ=150°C 0.6 0.5 0.5 0.9 1.3 1.7 2.1 ISD(A) DocID023799 Rev 4 7/13 13 Test circuits 3 STR2N2VH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID023799 Rev 4 10% AM01473v1 STR2N2VH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID023799 Rev 4 9/13 13 Package mechanical data STR2N2VH5 Figure 19. SOT-23 mechanical drawing 0053390_I Table 8. SOT-23 mechanical data mm Dim. Min. Max. A 0.89 1.40 A1 0 0.10 B 0.30 0.51 C 0.085 0.18 D 2.75 3.04 e 0.85 1.05 e1 1.70 2.10 E 1.20 1.75 H 2.10 3.00 L 10/13 Typ. 0.60 S 0.35 0.65 L1 0.25 0.55 a 0° 8° DocID023799 Rev 4 STR2N2VH5 Package mechanical data Figure 20. SOT-23 recommended footprint (a) 0.48 0.95 2.89 0.97 0.99 SOT-23 footp_I a. Dimensions are in mm. DocID023799 Rev 4 11/13 13 Revision history 5 STR2N2VH5 Revision history Table 9. Document revision history 12/13 Date Revision Changes 19-Oct-2012 1 First release. 14-Jan-2013 2 Modified: RDS(on) values 19-Mar-2014 3 – The part number STT5N2VH5 has been moved to a separate datasheet – Modified: the entire typical values in Table 5, 6 and 7 – Added: Section 2.1: Electrical characteristics (curves) – Minor text changes 25-Jul-2014 4 – Modified: title, description and features – Updated: Figure 12 – Minor text changes DocID023799 Rev 4 STR2N2VH5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID023799 Rev 4 13/13 13