STR2P3LLH6

STR2P3LLH6 Datasheet P-channel -30 V, 48 mΩ typ., -2 A STripFET™ H6 Power MOSFET in a SOT‑23 package Features 3 2 • • • • 1 SOT-23 D (3) Order code V DS RDS(on) max. ID STR2P3LLH6 -30 V 56 mΩ -2 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications Description G (1) This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S (2) PG1D3S2 Product status STR2P3LLH6 Product summary Order code STR2P3LLH6 Marking 2K3L Package SOT-23 Packing Tape and reel DS9647 - Rev 5 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com STR2P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -30 V VGS Gate-source voltage ± 20 V Drain current (continuous) at Tpcb = 25 °C -2 A Drain current (continuous) at Tpcb = 100 °C -1.2 A -8 A 0.35 W ID ID IDM (1) Drain current (pulsed) PTOT Total dissipation at Tpcb = 25 °C TJ Operating junction temperature range Tstg Storage temperature range -55 to 150 °C °C 1. Pulse width limited by safe operating area Table 2. Thermal resistance Symbol Rthj-pcb (1) Parameter Thermal resistance junction-pcb, single operation Value Unit 357 °C/W 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 s DS9647 - Rev 5 page 2/12 STR2P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 3. On /off states Symbol Parameter Test conditions Min Typ Max Drain-source breakdown voltage VGS = 0 V, ID = -250 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = -30 V (1) IGSS Gate body leakage current VGS = 0 V, VGS = ±20 V Gate threshold voltage VDS = VGS, ID = -250 µA Static drain-source VGS = -10 V, ID = -1 A 48 56 on-resistance VGS = -4.5 V, ID = -1 A 75 90 Min Typ Max - 639 - - 79 - - 52 - V(BR)DSS VGS(th) RDS(on) -30 Unit V -1 -1 µA -100 nA -2.5 V mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge VDD = -15 V, ID = -2 A - 6 - Qgs Gate-source charge VGS = -4.5 to 0 V - 1.9 - Gate-drain charge (see Figure 13. Gate charge test circuit) - 2.1 - Min Typ Max - 5.4 - Qgd VDS = -25 V, f=1 MHz VGS = 0 V Unit pF nC Table 5. Switching times Symbol td(on) tr td (off) tf Parameter Turn-on delay time Test conditions VDD = -15 V, ID = -2 A, Unit Rise time RG = 4.7 Ω, VGS = -10 V - 5 - Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 19.2 - - 3.4 - Min Typ Max Unit - - -1.1 V Fall time ns Table 6. Source drain diode Symbol VSD DS9647 - Rev 5 (1) Parameter Forward on voltage Test conditions ISD = -2 A, VGS = 0 V page 3/12 STR2P3LLH6 Electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit trr Reverse recovery time ISD = -2 A, - - 11.2 ns Qrr Reverse recovery charge di/dt = 100 A/µs, - - 3.5 nC - - -0.6 A VDD= 24 V, TJ = 150 °C IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% DS9647 - Rev 5 page 4/12 STR2P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Note: For the P-channel Power MOSFET, current and voltage polarities are reversed. Figure 2. Thermal impedance Figure 1. Safe operating area GIPD081020141139FSR K -1 δ=0.5 0.2 0.1 10 0.05 0.02 -2 10 0.01 Zth=k*Rthj-pcb δ=tp/t -3 10 Single pulse tp t -4 10 -5 10 Figure 3. Output characteristics GIPG170920140950FSR ID (A) 10 -4 -3 10 -2 -1 10 10 0 10 1 10 tp (s) Figure 4. Transfer characteristics GIPG170920141543FSR ID (A) VGS= 10V 50 9V 8V 7V 6V 40 40 VDS= 7V 30 30 5V 20 4V 10 10 0 0 5 VDS(V) Figure 5. Gate charge vs gate-source voltage GIPG170920141552FSR VGS (V) 12 20 VDD = 15 V ID = 2 A 0 2 4 6 8 10 VGS(V) Figure 6. Static drain-source on-resistance GIPG170920141558FSR RDS(on) (mΩ) VGS= 10V 55 10 50 8 6 45 4 40 2 0 0 DS9647 - Rev 5 5 10 15 Qg(nC) 35 0 1 2 3 4 5 ID(A) page 5/12 STR2P3LLH6 Electrical characteristics (curves) Figure 7. Normalized V(BR)DSS vs temperature Figure 8. Capacitance variations GIPG290820141412MT V(BR)DSS ID = 1 mA 1.08 GIPD071020141032FSR C (pF) 800 (norm) 1.06 1.04 Ciss 600 1.02 1 400 0.98 200 0.96 0.94 0.92 -75 -25 25 75 175 TJ (°C) 125 Figure 9. Normalized gate threshold voltage vs. temperature VGS(th) Coss Crss 0 0 10 VDS(V) Figure 10. Normalized on-resistance vs. temperature GIPG290820141400MT RDS(on) GIPG290820141351MT (norm) (norm) VGS = 10 V 1.6 ID = 250 µA 1.1 20 1 1.4 0.9 1.2 0.8 1 0.7 0.8 0.6 0.6 0.5 0.4 -75 -25 25 75 125 0.4 -75 175 TJ(°C) -25 25 75 125 175 TJ(°C) Figure 11. Source-drain diode forward characteristics GIPD081020141131FSR VSD (V) Tj = -55°C 0.9 Tj = 25°C 0.8 0.7 Tj = 150°C 0.6 0.5 0 DS9647 - Rev 5 1 2 3 4 5 ISD(A) page 6/12 STR2P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS9647 - Rev 5 page 7/12 STR2P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SOT-23 package information Figure 15. SOT-23 package outline 8162275_998G_3 DS9647 - Rev 5 page 8/12 STR2P3LLH6 SOT-23 package information Table 7. SOT-23 package mechanical data Dim. mm Min. Typ. A Max. 1.25 A1 0.00 0.15 A2 1.00 1.10 1.20 A3 0.60 0.65 0.70 b 0.36 b1 0.36 c 0.14 c1 0.14 0.15 0.16 D 2.826 2.926 3.026 E 2.60 2.80 3.00 E1 1.526 1.626 1.726 e 0.90 0.95 1.00 e1 1.80 1.90 2.00 L 0.35 0.45 0.60 0.50 0.38 0.20 L1 0.59 REF L2 0.25 BSC R 0.05 R1 0.05 θ 0° θ1 3° θ2 6° 0.45 8° 5° 7° 14° Figure 16. SOT-23 recommended footprint (dimensions are in mm) DS9647 - Rev 5 page 9/12 STR2P3LLH6 Revision history Table 8. Document revision history Date Revision 09-May-2013 1 Changes Initial release. Document status promoted from preliminary to production data. 03-Nov-2014 2 Added Section 2.1: "Electrical characteristics (curves)". Minor text changes. Updated title and features in cover page. 05-Nov-2015 3 Updated Table 2: "Absolute maximum ratings", Table 4: "On /off states", Table 5: "Dynamic", Table 6: "Switching times", Table 7: "Source drain diode" and Section 2.1: "Electrical characteristics (curves)". Minor text changes. Removed maturity status indication from cover page. The document status is production data. 21-Feb-2018 4 Updated Section 4.1 SOT-23 package information. Minor text changes. 26-Mar-2019 DS9647 - Rev 5 5 Updated Table 3. On /off states. Minor text changes. page 10/12 STR2P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 SOT-23 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS9647 - Rev 5 page 11/12 STR2P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS9647 - Rev 5 page 12/12