STS10P3LLH6
Datasheet
P-channel -30 V, 10 mΩ typ., -12.5 A, STripFET H6 Power MOSFET
in an SO-8 package
Features
5
8
4
•
•
•
•
1
SO-8
Order code
VDS
RDS(on) max.
ID
STS10P3LLH6
-30 V
12 mΩ
-12.5 A
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
D(5, 6, 7, 8)
Applications
•
Switching applications
G(4)
Description
S(1, 2, 3)
AM01475v4
This device is a P-channel Power MOSFET developed using the STripFET H6
technology with a new trench gate structure. The resulting Power MOSFET exhibits
very low RDS(on) in all packages.
Product status link
STS10P3LLH6
Product summary
Order code
STS10P3LLH6
Marking
10K3L
Package
SO-8
Packing
Tape and reel
DS10150 - Rev 7 - July 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STS10P3LLH6
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
-30
V
VGS
Gate-source voltage
±20
V
Drain current (continuous) at Tamb = 25 °C
-12.5
Drain current (continuous) at Tamb = 100 °C
-7.8
IDM (1)
Drain current (pulsed)
-50
A
PTOT
Total power dissipation at Tamb = 25 °C
2.7
W
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = -5 A)
70
mJ
Tstg
Storage temperature range
-55 to 150
°C
Value
Unit
47
°C/W
ID
TJ
Operating junction temperature range
A
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol
Rthj-amb
(1)
Parameter
Thermal resistance junction-amb
1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s.
DS10150 - Rev 7
page 2/13
STS10P3LLH6
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
Min.
ID = -250 µA
Typ.
Max.
-30
Unit
V
VGS = 0 V, VDS = -30 V
-1
µA
-10
µA
-100
nA
-1.7
-2.5
V
VGS = -10 V, ID = -5 A
10
12
VGS = -4.5 V, ID = -5 A
14
17
Min.
Typ.
Max.
Unit
-
3350
-
pF
-
414
-
pF
-
287
-
pF
-
33
-
nC
-
14
-
nC
-
11
-
nC
Min.
Typ.
Max.
Unit
-
12.8
-
ns
IDSS
Zero gate voltage drain current
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = -250 µA
RDS(on)
Static drain-source on-resistance
VGS = 0 V, VDS = -30 V, TC = 125
°C(1)
-1.0
mΩ
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = -25 V, f = 1 MHz, VGS = 0 V
VDD = -15 V, ID = -10 A, VGS = -4.5 V
(see Figure 13. Gate charge test circuit)
Table 5. Switching times
Symbol
td(on)
tr
td(off)
tf
DS10150 - Rev 7
Parameter
Turn-on delay time
Test conditions
VDD = -15 V, ID = -5 A,
Rise time
RG = 4.7 Ω, VGS = -10 V
-
112
-
ns
Turn-off delay time
(see Figure 12. Switching times test
circuit for resistive load)
-
61
-
ns
-
45
-
ns
Fall time
page 3/13
STS10P3LLH6
Electrical characteristics
Table 6. Source drain diode
Symbol
VSD (1)
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-1.1
V
Forward on voltage
ISD = -5 A, VGS = 0 V
-
trr
Reverse recovery time
ISD = -5 A, di/dt = 100 A/µs,
-
25.2
ns
Qrr
Reverse recovery charge
VDD = -24 V, TJ = 150 °C
-
17.4
nC
IRRM
Reverse recovery current
(see Figure 14. Test circuit for inductive
load switching and diode recovery times)
-
-1.4
A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
DS10150 - Rev 7
page 4/13
STS10P3LLH6
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2. Thermal impedance
Figure 1. Safe operating area
ID
(A)
10 1
GIPG180920141409MT
K
GIPG040920141328MT
δ=0.5
is
ea )
n
ar
is DS(o
th
in x. R
n
a
tio m
ra by
e
Op ited
lim
0.2
10 ms
0.05
100 ms
10 0
1s
10 -1
10 0
V DS (V)
10 1
GIPG190920140955MT
VGS = 9,10V
0.01
8V
0.001
10-5
5V
150
100
4V
100
50
3V
50
6
8
VDS(V)
Figure 5. Gate charge vs gate-source voltage
GIPG080920141051MT
VGS
(V)
VDD=15V
IG=10A
12
10-2
10-1
101 t p(s)
100
GIPG290820141119MT
ID
(A)
150
4
10-3
VDS=4V
200
6V
2
10-4
7V
200
0
0
amb
0.01
Figure 4. Transfer characteristics
Figure 3. Output characteristics
ID (A)
0.02
Single pulse
T j = 150 °C
T c = 25 °C
single pulse
10 -2
10 -1
0.1
0.1
0
0
2
4
VGS(V)
8
6
Figure 6. Static drain-source on-resistance
GIPG180920141418MT
RDS(on)
(mΩ)
VGS=10V
10.5
10
10.0
8
6
9.5
4
9.0
2
0
DS10150 - Rev 7
0
20
40
60
Qg(nC)
8.5
0
2
4
6
8
10
ID(A)
page 5/13
STS10P3LLH6
Electrical characteristics (curves)
Figure 8. Normalized gate threshold voltage vs
temperature
Figure 7. Capacitance variations
GIPG290820141342MT
C
(pF)
VGS(th)
GIPG080920141247MT
(norm)
ID=250 µA
1.1
4000
1.0
Ciss
3000
0.9
2000
0.8
0.7
1000
0
0
0.6
Coss
Crss
5
10
15
20
25
0.5
-75
VDS(V)
Figure 9. Normalized on-resistance vs temperat
25
125
75
175 TJ(°C)
Figure 10. Normalized V(BR)DSS vs temperature
GIPG080920141251MT
RDS(on)
-25
GIPG080920141302MT
V(BR)DSS
(norm)
(norm)
VGS=10V
1.6
1.08
ID=1mA
1.06
1.4
1.04
1.2
0.02
1.0
1.00
0.98
0.8
0.96
0.6
0.4
-75
0.94
-25
25
75
0.92
-75
175 TJ(°C)
125
-25
25
75
125
175 TJ(°C)
Figure 11. Source-drain diode forward characteristics
GIPG080920141314MT
VSD
(V)
1.0
TJ=-55°C
0.9
TJ=25°C
0.8
0.7
TJ=175°C
0.6
0.5
0.4
0
Note:
DS10150 - Rev 7
2
4
6
8
10
ISD(A)
For the P-channel Power MOSFET, current and voltage polarities are reversed.
page 6/13
STS10P3LLH6
Test circuits
3
Test circuits
Figure 12. Switching times test circuit for resistive load
Figure 13. Gate charge test circuit
Figure 14. Test circuit for inductive load switching and diode recovery times
DS10150 - Rev 7
page 7/13
STS10P3LLH6
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
4.1
SO-8 package information
Figure 15. SO-8 package outline
0016023_So-807_fig2_Rev10
DS10150 - Rev 7
page 8/13
STS10P3LLH6
SO-8 package information
Table 7. SO-8 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
1.75
A1
0.10
A2
1.25
b
0.31
0.51
b1
0.28
0.48
c
0.10
0.25
c1
0.10
0.23
D
4.80
4.90
5.00
E
5.80
6.00
6.20
E1
3.80
3.90
4.00
e
0.25
1.27
h
0.25
0.50
L
0.40
1.27
L1
1.04
L2
0.25
k
0°
8°
ccc
0.10
Figure 16. SO-8 recommended footprint (dimensions are in mm)
0016023_So-807_footprint_Rev10
DS10150 - Rev 7
page 9/13
STS10P3LLH6
SO-8 packing information
4.2
SO-8 packing information
Figure 17. SO-8 tape and reel dimensions
D
A
N
T
Po
Bo
Ko
Ao
P
0016023_SO-8_O7_T_R
Table 8. SO-8 tape and reel mechanical data
Dim.
mm
Min.
Typ.
A
330
C
12.8
D
20.2
N
60
T
DS10150 - Rev 7
Max.
13.2
-
22.4
Ao
6.5
6.7
Bo
5.4
5.6
Ko
2.0
2.2
Po
3.9
4.1
P
7.9
8.1
page 10/13
STS10P3LLH6
Revision history
Table 9. Document revision history
Date
Revision
06-May-2014
1
Changes
Initial release.
Updated the title, the features and the description in cover page. Updated Section 1:
"Electrical ratings", Section 2: "Electrical characteristics".
24-Sep-2014
2
Added Section 2.1: "Electrical characteristics (curves)"
Minor text changes.
Text and formatting changes throughout document.
On cover page:
- updated title description and Features table
11-Jun-2015
3
In Section 1 Electrical ratings:
- updated Table Absolute maximum ratings
In section 2.1 Electrical characteristics (curves)
- updated Figure Safe operating area
Updated and renamed Section 4.1 SO-8 package information (was SO-8 mechanical data)
DS10150 - Rev 7
24-Aug-2015
4
06-Dec-2016
5
03-Apr-2017
6
08-Jul-2020
7
Updated Table 4: "On/off states".
Updated VGS(th) in Table 4: "On/off states".
Minor text changes.
Added EAS value in Table 2: "Absolute maximum ratings".
Updated Internal schematic.
Updated Section 4 Package information.
page 11/13
STS10P3LLH6
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS10150 - Rev 7
page 12/13
STS10P3LLH6
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2020 STMicroelectronics – All rights reserved
DS10150 - Rev 7
page 13/13