STS10PF30L

STS10PF30L P-CHANNEL 30V - 0.012 Ω - 10A SO-8 STripFET™ II POWER MOSFET Table 1: General Features TYPE STS10PF30L ■ ■ ■ Figure 1:Package VDSS RDS(on) ID 30V 10 sec. ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) Table 5: OFF Symbol Parameter Test Conditions Min. Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Typ. 30 Parameter Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 5 A ID = 5 A Table 7: DYNAMIC Symbol gfs Ciss Coss Crss Parameter s b O (s) ID = 5 A VDS = 25V, f = 1 MHz, VGS = 0 Input Capacitance Output Capacitance Reverse Transfer Capacitance t e l o o s b O - VDS = 10 V Forward Transconductance t c u 1 e t le Test Conditions d o r P e 2/9 Min. VGS(th) Unit V Typ. o r P Min. 1 10 µA µA ±100 nA c u d Table 6: ON (*) Symbol Max. ) s t( Max. Unit V 0.012 0.015 0.014 0.018 Ω Ω Typ. Max. Unit 31 S 2300 750 115 pF pF pF STS10PF30L ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7 Ω (Resistive Load, Figure 15) 72 87 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V ID= 10A VGS=4.5V 29 6.8 7.6 39 nC nC nC Typ. Max. Unit (see test circuit, Figure 16) ns ns Table 9: SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. VDD = 15 V ID = 5 A VGS = 4.5 V RG = 4.7Ω, (Resistive Load, Figure 15) Turn-off Delay Time Fall Time 89 27 Table 10: SOURCE DRAIN DIODE ns ns Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (*) trr Qrr IRRM Test Conditions Min. r P e t le Forward On Voltage ISD = 10 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A di/dt = 100A/µs Tj = 150°C VDD = 15 V (see test circuit, Figure 17) (*) Pulse width > 300 µs, duty cycle 1.5 %. (•) Pulse width limited by TJMAX ) s ( ct u d o Figure 3: Safe Operating Area r P e VGS = 0 o s b O - uc Typ. od 48.5 68 2.8 ) s t( Max. Unit 10 40 A A 1.2 V ns nC A Figure 4: Thermal Impedance t e l o s b O 3/9 STS10PF30L Figure 5: Output Characteristics Figure 6: Transfer Characteristics Figure 7: Transconductance Figure 8: Static Drain-source On Resistance c u d e t le ) s ( ct u d o r P e Figure 9: Gate Charge vs Gate-source Voltage t e l o s b O 4/9 o r P o s b O - Figure 10: Capacitance Variations ) s t( STS10PF30L Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 12: Normalized on Resistance vs Temperature Figure 13: Source-drain Diode Forward Characteristics Figure 14: Normalized Breakdown Voltage vs Temperature. c u d e t le ) s ( ct u d o r P e . ) s t( o r P o s b O . t e l o s b O 5/9 STS10PF30L Fig. 15: Switching Times Test Circuits For Resistive Load Fig. 16: Gate Charge test Circuit Fig. 17: Test Circuit For Diode Recovery Behaviour c u d e t le ) s ( ct u d o r P e t e l o s b O 6/9 o s b O - o r P ) s t( STS10PF30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A inch MAX. MIN. TYP. MAX. a1 1.75 0.1 0.068 0.25 a2 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 ) s t( c1 45 (typ.) D 4.8 5.0 0.188 E 5.8 6.2 0.228 0.196 0.244 c u d e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 L 0.4 1.27 0.015 M e t le 0.6 S 8 (max.) ) s ( ct o r P 0.157 0.050 0.023 o s b O - u d o r P e t e l o s b O 0016023 7/9 STS10PF30L Table 11:Revision History Date Revision May 2005 2.0 Description of Changes completed whit curves c u d e t le ) s ( ct u d o r P e t e l o s b O 8/9 o s b O - o r P ) s t( STS10PF30L c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. s b O The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America. www.st.com 9/9