STS19N3LLH6

STS19N3LLH6 N-channel 30 V, 0.0049 Ω, 19 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type RDS(on) max VDSS STS19N3LLH6 30 V ID 0.0056 Ω ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge 8 19 A 7 6 5 1 2 3 4 SO-8 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STS19N3LLH6 19G3L SO-8 Tape and reel July 2011 Doc ID 019031 Rev 1 1/14 www.st.com 14 Contents STS19N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 019031 Rev 1 STS19N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VDS VGS(1) Parameter Drain-source voltage (VGS = 0) Gate-source voltage Value Unit 30 V ± 20 V ID Drain current (continuous) at TC = 25 °C 19 A ID Drain current (continuous) at TC=100 °C 11.8 A Drain current (pulsed) 76 A PTOT Total dissipation at Tamb = 25 °C 2.7 W TJ Operating junction temperature Storage temperature -55 to 150 °C Value Unit 47 °C/W IDM (2) Tstg 1. Continuous mode 2. Pulse width limited by safe operating area Table 3. Symbol Rthj-amb (1) Thermal resistance Parameter Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Doc ID 019031 Rev 1 3/14 Electrical characteristics 2 STS19N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V TC=125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 9.5 A VGS= 4.5 V, ID= 9.5 A V(BR)DSS Table 5. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V 0.0049 0.0056 0.0066 0.0075 Ω Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit - pF pF pF Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1690 290 176 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 19 A VGS =4.5 V Figure 19 - 17 8 6 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain - 1.7 - Ω RG 4/14 On/off states Doc ID 019031 Rev 1 STS19N3LLH6 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=15 V, ID= 9.5 A, RG=4.7 Ω, VGS=4.5 V Figure 13 Min. Typ. Max. Unit - 9.5 30 37 12 - ns ns ns ns Min. Typ. Max. Unit Source drain diode Parameter Test conditions Source-drain current - 13 A ISDM(1) Source-drain current (pulsed) - 76 A VSD(2) Forward on Voltage ISD= 19 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 19 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C Figure 15 - trr Qrr IRRM 14 16.8 1.4 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Doc ID 019031 Rev 1 5/14 Electrical characteristics 2.1 STS19N3LLH6 Electrical characteristics (curves) Figure 2. Safe operating area ! )$ Figure 3. Thermal impedance Figure 5. Transfer characteristics !-V   MS  MS S    Figure 4. )$ !  6$36  Output characteristics !-V 6'36 !-V )$ ! 6  66 $3  6     6       Figure 6. 6      6$36 Normalized BVDSS vs temperature !-V "6$33 NORM    Figure 7.      6'36 Static drain-source on resistance !-V?B 2$3ON M/HM                  6/14         4* # Doc ID 019031 Rev 1          )$! STS19N3LLH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6 6$$6 )$!  Capacitance variations !-V # P&    #ISS               1GN# Figure 10. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM  #OSS #RSS     6$36 Figure 11. Normalized on resistance vs temperature !-V 2$3ON NORM                       4* #            4* # Figure 12. Source-drain diode forward characteristics !-V 63$ 6 4*  #     4* # 4* #            )3$! Doc ID 019031 Rev 1 7/14 Test circuits 3 STS19N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 019031 Rev 1 10% AM01473v1 STS19N3LLH6 Test circuits Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 019031 Rev 1 9/14 Package mechanical data 4 STS19N3LLH6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 Doc ID 019031 Rev 1 STS19N3LLH6 Package mechanical data Table 8. SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 A2 1.25 b 0.28 0.48 c 0.17 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0° 8° ccc 0.10 Doc ID 019031 Rev 1 11/14 Package mechanical data STS19N3LLH6 Figure 20. SO-8 drawing 0016023_Rev_E 12/14 Doc ID 019031 Rev 1 STS19N3LLH6 5 Revision history Revision history Table 9. Document revision history Date Revision 08-Jul-2011 1 Changes First release Doc ID 019031 Rev 1 13/14 STS19N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 019031 Rev 1