STS1DNC45

STS1DNC45 DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8 SuperMESH™ POWER MOSFET TYPE STS1DNC45 s s VDSS 450 V RDS(on) < 4.5 Ω ID 0.4 A s TYPICAL RDS(on) = 4.1Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. SO-8 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s DC-DC CONVERTERS s LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) s LOW POWER BATTERY CHARGERS s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM ( ) PTOT dv/dt(1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Peak Diode Recovery voltage slope Value 450 450 ± 30 0.40 0.25 1.6 1.6 2 3 (1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W V/ns (q ) Pulse width limited by safe operating area June 2003 1/8 STS1DNC45 THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operation Max. Operating Junction Temperature Storage Temperature 62.5 78 150 –65 to 150 °C/W °C/W °C °C (#) When Mounted on FR4 board (Steady State) AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 0.4 30 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V Min. 450 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 0.5 A Min. 2.3 Typ. 3 4.1 Max. 3.7 4.5 Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 25 V, ID = 0.5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 1.1 160 27.5 4.7 Max. Unit S pF pF pF 2/8 STS1DNC45 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 225 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 360 V, ID = 1.5 A, VGS = 10 V Min. Typ. 6.7 4 7 1.3 3.2 10 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(off) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 360 V, ID = 1.5 A RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 5) Min. Typ. 8.5 12 18 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.4 A, VGS = 0 ISD = 0.4 A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 225 530 4.7 Test Conditions Min. Typ. Max. 0.4 1.6 1.6 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS1DNC45 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS1DNC45 Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Max Id Current vs Tc Maximum Avalanche Energy vs Temperature 5/8 STS1DNC45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS1DNC45 SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS1DNC45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8