STS26N3LLH6

STS26N3LLH6 N-channel 30 V, 0.0038 Ω, 26 A, SO-8 STripFET™ VI DeepGATE™ Power MOSFET Features Type RDS(on) max VDSS STS26N3LLH6 30 V ID 0.0044 Ω ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge 8 26 A 7 6 5 1 2 3 4 SO-8 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Packag Packaging STS26N3LLH6 26G3L SO-8 Tape and reel October 2011 Doc ID 019030 Rev 2 1/14 www.st.com 14 Contents STS26N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 019030 Rev 2 STS26N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VDS VGS(1) Parameter Drain-source voltage (VGS = 0) Gate-source voltage Value Unit 30 V ± 20 V ID Drain current (continuous) at TC = 25 °C 26 A ID Drain current (continuous) at TC=100 °C 16.25 A Drain current (pulsed) 104 A PTOT Total dissipation at Tamb = 25 °C 2.7 W TJ Operating junction temperature Storage temperature -55 to 150 °C Value Unit 47 °C/W Value Unit IDM (2) Tstg 1. Continuous mode 2. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Rthj-amb (1) Parameter Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current 40 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAV) 525 mJ Doc ID 019030 Rev 2 3/14 Electrical characteristics 2 STS26N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V, TC=125 °C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 13 A VGS= 4.5 V, ID= 13 A V(BR)DSS Table 6. Symbol Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1 V 0.0038 0.0044 0.0047 0.0053 Ω Ω Dynamic Parameter Test conditions Min. Typ. Max. Unit - pF pF pF Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 4040 740 425 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 26 A VGS =4.5 V Figure 19 - 40 13 16 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain - 1.4 - Ω RG 4/14 On/off states Doc ID 019030 Rev 2 STS26N3LLH6 Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol ISD VDD=15 V, ID= 13 A, RG=4.7 Ω, VGS=4.5 V Figure 13 Min. Typ. Max. Unit - 17 18 75 46 - ns ns ns ns Min Typ. Max Unit Source drain diode Parameter Test conditions Source-drain current - 26 A (1) Source-drain current (pulsed) - 104 A (2) Forward on Voltage ISD=13 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=13 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C Figure 15 - ISDM VSD Turn-on delay time Rise time Turn-off delay time Fall time Test conditions trr Qrr IRRM 34 35 2.1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Doc ID 019030 Rev 2 5/14 Electrical characteristics STS26N3LLH6 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM10015v1 ID (A) 100 10 10 ms 1 100 ms 1s 0.1 0.01 0.1 Figure 4. ID (A) 350 10 1 VDS(V) Output characteristics AM04976v1 VGS=10V AM04977v1 ID (A) 350 300 VDS=1V 300 5V 250 250 4V 200 200 150 150 100 100 3V 50 50 0 0 Figure 6. 2 4 VDS(V) Normalized BVDSS vs temperature AM04979v1 BVDSS (norm) 1.06 0 0 Figure 7. 2 4 6 8 10 VGS(V) Static drain-source on resistance AM04905v1 RDS(on) (mΩ) 5.5 VGS=10V 5.0 1.04 4.5 4.0 1.02 3.5 1.00 3.0 0.98 2.5 2.0 0.96 0.94 -50 -25 6/14 1.5 1 0 25 50 75 100 125 150 TJ(°C) Doc ID 019030 Rev 2 0 20 40 60 80 ID(A) STS26N3LLH6 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM04980v1 VGS (V) VDD=15V ID=26A 12 Capacitance variations 6100 10 5100 8 4100 6 3100 4 2100 2 1100 0 0 40 20 60 AM04981v1 C (pF) 80 100 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM04982v1 VGS(th) (norm) 1.2 100 0 Ciss Coss Crss 5 10 15 20 25 VDS(V) Figure 11. Normalized on resistance vs temperature AM04983v1 RDS(on) (norm) 1.6 1.4 1.0 1.2 0.8 1.0 0.6 0.8 0.6 0.4 0.4 0.2 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ(°C) 0 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04984v1 VSD (V) 1.0 TJ=-50°C 0.9 TJ=25°C 0.8 0.7 0.6 0.5 TJ=150°C 0.4 0 20 40 60 80 ISD(A) Doc ID 019030 Rev 2 7/14 Test circuits 3 STS26N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 019030 Rev 2 10% AM01473v1 STS26N3LLH6 Test circuits Figure 19. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Doc ID 019030 Rev 2 9/14 Package mechanical data 4 STS26N3LLH6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 Doc ID 019030 Rev 2 STS26N3LLH6 Package mechanical data Table 9. SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 A2 1.25 b 0.28 0.48 c 0.17 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 k 1.04 0° 8° ccc 0.10 Doc ID 019030 Rev 2 11/14 Package mechanical data STS26N3LLH6 Figure 20. SO-8 drawing 0016023_Rev_E 12/14 Doc ID 019030 Rev 2 STS26N3LLH6 5 Revision history Revision history Table 10. Document revision history Date Revision Changes 08-Jul-2011 1 First release. 19-Oct-2011 2 Document status promoted from preliminary data to datasheet. Doc ID 019030 Rev 2 13/14 STS26N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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