STS3DNF30L

® STS3DNF30L N - CHANNEL 30V - 0.055Ω - 3.5A - SO-8 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STS3DNF30L s s V DSS 30 V R DS(on) < 0.065 Ω ID 3.5 A s TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFAC MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCS s SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 2 5 C Single Operation Drain Current (continuous) at T c = 1 00 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Single Operation o o Value 30 30 ± 20 3.5 2.2 14 2 1.6 Unit V V V A A A W W IDM ( • ) P tot (•) Pulse width limited by safe operating area December 1998 1/5 STS3DNF30L THERMAL DATA R thj-amb TJ T stg *Thermal Resistance Junction-ambient Singe Operation Max Thermal Resistance Junction-ambient Dual Operation Max Maximum Lead Temperature For Soldering Purpose Storage Temperature 78 62.5 150 -55 to 150 o o C/W C/W o C o C (*) Mounted on FR-4 board (t ≤ 10 sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-Source Leakage Current (V DS = 0 ) V GS = ± 20 V T c = 1 25 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 1 0 V V GS = 4 .5 V Test Conditions I D = 2 50 µ A I D = 1 .75 A I D = 1 .75 A 3.5 Min. 1 Typ. 1.7 0.055 0.06 Max. 2.5 0.065 0.09 Unit V Ω Ω A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz ID = 6 A V GS = 0 Min. Typ. 6 420 62 20 550 80 30 Max. Unit S pF pF pF 2/5 STS3DNF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 1 5 V R G = 4 .7 Ω V DD = 2 4 V ID =4 A ID = 2 A V GS = 4.5 V V GS = 4 .5 V Min. Typ. 13 30 8 3.2 2.6 Max. 17 40 11 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 2 4 V R G = 4 .7 Ω ID = 4 A V GS = 4 .5 V Min. Typ. 5 9 20 Max. 7 12 26 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.5 A I SD = 4 A V DD = 1 5 V V GS = 0 di/dt = 100 A/ µ s T j = 1 50 o C 23 0.134 1.2 Test Conditions Min. Typ. Max. 3.5 14 1.2 Unit A A V ns µC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STS3DNF30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 4/5 STS3DNF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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