STS4DPFS2LS

P-CHANNEL 20V - 0.06Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.07 Ω VRRM 40 V ID 4A VF(MAX) 0.44 V STS4DPFS2LS SO-8 DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT EAS (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy Value 20 20 ± 20 4 3.4 16 2 20 Unit V V V A A A W mJ SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 120°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz Value 40 10 3 75 1 10000 Unit V A A A A V/µs (•)Pulse width limited by safe operating area (1) Starting Tj = 25°C, I D = 2.5 A, VDD = 20 V Note: For the P-CHANNEL MOSFET actual polarity of Voltages and current has to be reversed February 2001 1/8 STS4DPFS2LS THERMAL DATA Rthj-amb Rthj-amb Tstg Tl (*)Thermal Resistance Junction-ambient MOSFET (*)Thermal Resistance Junction-ambient SCHOTTKY Storage Temperature Range Junction Temperature (*) Mounted on FR-4 board (Steady State) 62.5 100 -55 to 150 150 °C/W °C/W °C °C MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V Min. 20 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 2.5 A VGS = 4.5V, ID = 2.5 A VDS > ID(on) x RDS(on)max, VGS = 10V 16 Min. 1 Typ. 1.6 0.06 0.07 Max. 2.5 0.07 0.085 A Unit V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5 1350 490 130 Max. Unit S pF pF pF 2/8 STS4DPFS2LS ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 24V, ID = 6A, VGS = 4.5 V Min. Typ. 25 35 12.5 5 3 16 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 15 V, ID = 2A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Vclamp = 24 V, ID = 6 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 5) Min. Typ. 125 30 83 40 75 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A, VGS = 0 ISD = 4 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 5) 45 36 1.6 Test Conditions Min. Typ. Max. 4 16 1.2 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol IR(*) VF(*) Parameter Reversed Leakage Current Forward Voltage Drop Test Conditions TJ = 25 °C , VR = 30 V TJ = 125 °C , VR = 30 V TJ = TJ = TJ = TJ = TJ = TJ = 25 °C , IF = 1 A 125 °C , IF = 1 A 25 °C , IF = 2 A 125 °C , IF = 2 A 25 °C , IF = 3 A 125 °C , IF = 3 A Min. Typ. 14 8 0.37 0.28 0.41 0.34 0.4 Max. 50 18 0.42 0.32 0.46 0.39 0.5 0.44 Unit µA mA V V V V V V 3/8 STS4DPFS2LS Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/8 STS4DPFS2LS Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS4DPFS2LS Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS4DPFS2LS SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS4DPFS2LS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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