STS5DNE30L

® STS5DNE30L N - CHANNEL 30V - 0.039Ω - 5A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA T YPE STS5DNE30L s s V DSS 30 V R DS(on) < 0.045 Ω ID 5A s TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique " Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0 ) Drain- gate Voltage (R GS = 2 0 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Single Operation Drain Current (continuous) at T c = 1 00 o C Single Operation Drain Current (pulsed) Total Dissipation at T c = 25 C Dual Operation Total Dissipation at T c = 25 o C Sinlge Operation o o Value 30 30 ± 20 5 3.1 20 2 1.6 Unit V V V A A A W W IDM ( • ) P tot (•) Pulse width limited by safe operating area December 1998 1/5 STS5DNE30L THERMAL DATA R thj-amb Tj T stg *Thermal Resistance Junction-ambient Single Operation Dual Operation Maximum Operating Junction Temperature Storage Temperature 78 62.5 150 -55 to 150 o o C/W C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 2 50 µ A V GS = 0 Min. 30 1 10 ± 1 00 Typ. Max. Unit V µA µA nA Zero Gate Voltage V DS = M ax Rating Drain Current (V GS = 0 ) V DS = M ax Rating Gate-body Leakage Current (V DS = 0 ) V GS = ± 2 0 V T c = 1 25 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 1 0 V V GS = 4 .5 V Test Conditions I D = 2 50 µ A I D = 2.5 A I D = 2.5 A 20 Min. 1 Typ. 1.7 0.039 0.054 Max. 2.5 0.045 0.065 Unit V Ω Ω A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 1 0 V DYNAMIC Symbol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 2 5 V f = 1 MHz I D = 2 .5 A V GS = 0 V Min. Typ. 6 TBD Max. Unit S pF pF pF 2/5 STS5DNE30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 1 5 V R G = 4 .7 Ω V DD = 2 4 V ID = 2 .5 A V GS = 4 .5 V ID = 5 A V GS = 4 .5 V Min. Typ. TBD Max. Unit ns ns nC nC nC TBD SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 2 4 V R G = 4 .7 Ω ID = 5 A V GS = 4.5 V Min. Typ. TBD Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5 A I SD = 5 A Vr = 20 V V GS = 0 d i/dt = 100 A/ µ s T j = 150 o C TBD Test Conditions Min. Typ. Max. 5 24 1.2 Unit A A V ns nC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STS5DNE30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 4/5 STS5DNE30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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