STS5NS150

N-CHANNEL 150V - 0.075 Ω - 5A SO-8 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STS5NS150 s s s s STS5NS150 VDSS 150 V RDS(on) ID(on) x RDS(on)max, VGS = 4 V VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5 990 175 110 Max. Unit S pF pF pF 2/8 STS5NS150 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 2.5 A VDD = 75 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 1) VDD= 120V ID= 5A VGS= 10V (see test circuit, Figure 2) Min. Typ. 12 2.8 65 5.5 2.7 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Turn-off Delay Time Fall Time Cross-over Time Test Conditions ID = 2.5 A VDD = 75 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 1) ID = 5 A Vclamp = 120 V RG = 4.7Ω, VGS = 10 V (Inductive Load, Figure 5) Min. Typ. 50 12 11 17 36 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A VGS = 0 150 712 9.5 Test Conditions Min. Typ. Max. 5 20 1.3 Unit A A V ns nC A di/dt = 100A/µs ISD = 5 A VDD = 30 V Tj = 150°C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS5NS150 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS5NS150 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature . . 5/8 STS5NS150 Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STS5NS150 SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS5NS150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8