STS5PF20V
P-CHANNEL 20V - 0.065Ω - 5A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
STS5PF20V
VDSS
RDS(on)
ID
20 V
< 0.080 Ω (@4.5V)
< 0.10 Ω (@2.5V)
5A
TYPICAL RDS(on) = 0.065Ω (@4.5V)
TYPICAL RDS(on) = 0.085Ω (@2.5V)
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
)
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■
■
■
■
SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size
strip-based process. The resulting transistor shows
extremely extremely low on-resistance when driven
at 2.5V.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ POWER MANAGEMENT IN CELLULAR
PHONES
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ORDER CODES
PART NUMBER
MARKING
PACKAGE
PACKAGING
STS5PF20V
S5PF20V
SO-8
TAPE & REEL
March 2004
1/8
STS5PF20V
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
20
V
Drain-gate Voltage (RGS = 20 kΩ)
20
V
Gate- source Voltage
±8
V
ID
Drain Current (continuous) at TC = 25°C
5
A
ID
Drain Current (continuous) at TC = 100°C
3.1
A
Drain Current (pulsed)
20
A
Total Dissipation at TC = 25°C
2.5
W
IDM ()
PTOT
() Pulse width limited by safe operating area
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Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-amb
Tj
Tstg
Thermal Resistance Junction-ambient Max
50
°C/W
Max. Operating Junction Temperature
–55 to 150
°C
Storage Temperature
–55 to 150
°C
ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 8V
±100
nA
Max.
Unit
IDSS
IGSS
Test Conditions
Min.
Typ.
Max.
20
Unit
V
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 4.5V, ID = 2.5 A
0.065
0.080
Ω
VGS = 2.5V, ID = 2.5 A
0.085
0.10
Ω
Typ.
Max.
Unit
0.45
V
DYNAMIC
2/8
Symbol
Parameter
gfs (1)
Forward Transconductance
VDS = 15 V , ID = 2.5 A
Test Conditions
Min.
6.6
S
Ciss
Input Capacitance
VDS = 15 V, f = 1 MHz, VGS = 0
412
pF
Coss
Output Capacitance
179
pF
Crss
Reverse Transfer
Capacitance
42.5
pF
STS5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
11
ns
Rise Time
VDD = 10 V, ID = 2.5 A
RG = 4.7Ω VGS = 2.5 V
(see test circuit, Figure 1)
47
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10 V, ID = 5 A,
VGS = 2.5V
(see test circuit, Figure 2)
4.5
0.73
1.75
6
nC
nC
nC
Typ.
Max.
Unit
Turn-on Delay Time
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Test Conditions
Turn-off-Delay Time
Fall Time
Min.
VDD = 10 V, ID = 2.5 A,
RG = 4.7Ω, VGS = 2.5 V
(see test circuit, Figure 1)
39
20
d
o
r
SOURCE DRAIN DIODE
Symbol
ISD
ISDM
VSD (1)
trr
Qrr
IRRM
Parameter
Source-drain Current
Forward On Voltage
ISD = 5 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs,
VDD = 16 V, Tj = 150°C
(see test circuit, Figure 3)
)
(s
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
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Min.
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Source-drain Current (pulsed)
P
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P
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Test Conditions
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Typ.
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P
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let
5
20
1.2
ns
ns
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Max.
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32
12.8
0.8
(s)
Unit
A
A
V
ns
nC
A
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3/8
STS5PF20V
Safe Operating Area
Thermal Impedence
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Output Characteristics
Transconductance
4/8
Transfer Characteristics
Static Drain-source On Resistance
STS5PF20V
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STS5PF20V
Fig. 1: Switching Times Test Circuit For
Resistive Load
Fig. 2: Gate Charge test Circuit
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Fig. 3: Test Circuit For Diode Recovery Behaviour
6/8
STS5PF20V
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.25
a2
MAX.
0.003
0.009
1.65
0.064
)
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a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
7/8
STS5PF20V
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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8/8
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