STS8N6LF6AG

STS8N6LF6AG Datasheet Automotive-grade N-channel 60 V, 21 mΩ typ., 8 A STripFET F6 Power MOSFET in an SO-8 package Features 5 8 4 Order code VDS RDS(on) max. ID PTOT STS8N6LF6AG 60 V 24 mΩ 8A 3.2 W 1 • • • • • • SO-8 D(5, 6, 7, 8) G(4) AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Logic level Applications • Switching applications S(1, 2, 3) AM01475v3 Description This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8N6LF6AG Product summary Order code STS8N6LF6AG Marking 8N6LF6 Package SO-8 Packing Tape and reel DS11956 - Rev 3 - July 2021 For further information contact your local STMicroelectronics sales office. www.st.com STS8N6LF6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tamb = 25 °C 8 Drain current (continuous) at Tamb = 100 °C 5.8 IDM(2) Drain current (pulsed) 32 A PTOT Total power dissipation at Tamb = 25 °C 3.2 W Tstg Storage temperature range ID(1) TJ Operating junction temperature range -55 to 175 A °C °C 1. When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s. 2. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol (1) RthJA Parameter Value Unit 47 °C/W Value Unit Avalanche current, not repetitive 6 A Single pulse avalanche energy 72 mJ Thermal resistance, junction-to-ambient 1. When mounted on an 1-inch² FR-4, 2 Oz copper board, t < 10 s. Table 3. Avalanche characteristics Symbol IAV EAS (1) Parameter 1. Starting TJ = 25 °C, ID = IAV, VDD = 43.5 V. DS11956 - Rev 3 page 2/14 STS8N6LF6AG Eelectrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. Static Symbol V(BR)DSS Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage VGS = 0 V, ID = 250 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V 1 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 V RDS(on) Static drain-source on-resistance 60 V 1 VGS = 10 V, ID = 4 A 21 24 VGS = 4.5 V, ID = 4 A 22 26 Min. Typ. Max. Unit - 1340 - pF - 90 - pF - 60 - pF - 27 - nC - 4.6 - nC - 4.3 - nC Min. Typ. Max. Unit mΩ Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 30 V, ID = 8 A, VGS = 10 V (see Figure 14. Test circuit for gate charge behavior) Table 6. Switching times Symbol td(on) tr td(off) tf DS11956 - Rev 3 Parameter Test conditions Turn-on delay time VDD = 30 V, ID = 4 A, - 9.6 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 20 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 56 - ns - 7 - ns Fall time page 3/14 STS8N6LF6AG Eelectrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 8 A Source-drain current (pulsed) - 32 A 1.3 V Forward on voltage VGS = 0 V, ISD = 8 A - trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs, - 22.5 ns Qrr Reverse recovery charge VDD = 48 V, TJ = 25 °C - 22.2 nC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 2.0 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS11956 - Rev 3 page 4/14 STS8N6LF6AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area K GADG011220160927SOA ID (A) Operation in this area is limited by R DS(on) GADG011220160858ZTH δ = 0.5 δ = 0.2 101 10 -1 δ = 0.1 δ = 0.05 tp =100 µs 100 δ = 0.02 δ = 0.01 tp =1 ms T J ≤ 175 °C T amb = 25°C single pulse 10-1 10-2 10-1 100 10 -2 tp =10 ms VDS (V) 101 Single pulse 10 -3 10 -5 Figure 3. Output characteristics ID (A) VGS = 6, 7, 8, 9, 10 V VGS = 3 V ID (A) 20 16 16 12 12 8 8 4 4 2 3 4 5 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GADG011220160851QVG 8 tp (s) GADG011220160823TCH 0 0 VDS = 5 V 0.5 1 1.5 2 2.5 3 VGS (V) Figure 6. Static drain-source on-resistance RDS(on) (mΩ) GADG301120161557RID 21.0 VDS = 30 V ID = 8 A 6 20.6 2 20.4 4 8 12 16 VGS = 10 V 20.8 4 DS11956 - Rev 3 10 0 21.2 10 0 0 10 -1 24 20 1 10 -2 28 24 0 0 10 -3 Figure 4. Transfer characteristics GADG301120161620OCH 28 10 -4 20 24 Qg (nC) 20.2 2 3 4 5 6 7 ID (A) page 5/14 STS8N6LF6AG Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations C (pF) GADG011220160832CVR VGS(th) (norm.) GADG301120161608VTH 1.2 CISS 10 3 1.0 0.8 0.6 10 2 COSS CRSS ID = 250 µA 0.4 0.2 10 1 0 10 20 30 40 50 60 0.0 -75 VDS (V) 25 75 125 175 TJ (°C) Figure 10. Normalized V(BR)DSS vs temperature Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) -25 V(BR)DSS (norm.) GADG301120161603RON GADG301120161611BDV 1.12 2.5 VGS = 10 V 2.0 ID = 250 µA 1.08 1.04 1.5 1.00 1.0 0.96 0.5 0.0 -75 0.92 -25 25 75 125 175 0.88 -75 TJ (°C) -25 25 75 125 175 TJ (°C) Figure 11. Source-drain diode forward characteristics VSD (V) GADG301120161614SDF 1.0 0.9 TJ = -55 °C TJ = 25 °C 0.8 0.7 TJ = 175 °C 0.6 0.5 0.4 2 DS11956 - Rev 3 3 4 5 6 7 ISD (A) page 6/14 STS8N6LF6AG Test circuits 3 Test circuits Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 14. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 15. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 17. Switching time waveform Figure 16. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS11956 - Rev 3 page 7/14 STS8N6LF6AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SO-8 package information Figure 18. SO-8 package outline 0016023_So-807_fig2_Rev10 DS11956 - Rev 3 page 8/14 STS8N6LF6AG SO-8 package information Table 8. SO-8 mechanical data Dim. mm Min. Typ. Max. A 1.75 A1 0.10 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0° 8° ccc 0.10 Figure 19. SO-8 recommended footprint (dimensions are in mm) 0016023_So-807_footprint_Rev10 DS11956 - Rev 3 page 9/14 STS8N6LF6AG SO-8 packing information 4.2 SO-8 packing information Figure 20. SO-8 tape and reel dimensions D A N T Po Bo Ko Ao P 0016023_SO-8_O7_T_R Figure 21. Tape orientation DS11956 - Rev 3 page 10/14 STS8N6LF6AG SO-8 packing information Table 9. SO-8 tape and reel mechanical data Dim. mm Min. Typ. A 330 C 12.8 D 20.2 N 60 T DS11956 - Rev 3 Max. 13.2 - 22.4 Ao 6.5 6.7 Bo 5.4 5.6 Ko 2.0 2.2 Po 3.9 4.1 P 7.9 8.1 page 11/14 STS8N6LF6AG Revision history Table 10. Document revision history Date Version 24-Jan-2017 1 Changes First release. Updated Internal schematic. 08-Mar-2021 2 Updated Section 4.2 SO-8 packing information. Minor text changes. 21-Jul-2021 DS11956 - Rev 3 3 Updated Section Internal schematic. page 12/14 STS8N6LF6AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 DS11956 - Rev 3 page 13/14 STS8N6LF6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS11956 - Rev 3 page 14/14