STS9P3LLH6

STS9P3LLH6 Datasheet P-channel -30 V, 12 mΩ typ., -9 A, STripFET H6 Power MOSFET in an SO-8 package Features 5 8 4 • • • • 1 SO-8 Order code VDS RDS(on) max. ID STS9P3LLH6 -30 V 15 mΩ -9 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications • Switching applications G(4) Description S(1, 2, 3) AM01475v4 This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS9P3LLH6 Product summary Order code STS9P3LLH6 Marking 9K3L Package SO-8 Packing Tape and reel DS10146 - Rev 3 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com STS9P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -30 V VGS Gate-source voltage ±20 V ID(1) IDM(2) PTOT(1) Tstg TJ Drain current (continuous) at Tamb = 25°C -9 Drain current (continuous) at Tamb = 100°C -5.6 Drain current (pulsed) -36 A Total power dissipation at Tamb = 25°C 2.7 W Storage temperature range Operating junction temperature range -55 to 150 A °C °C 1. This value is rated according to RthJA. 2. Pulse width limited by safe operating area. Table 2. Thermal data Symbol RthJA(1) Parameter Thermal resistance, junction-to-ambient Value Unit 47 °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s. DS10146 - Rev 3 page 2/13 STS9P3LLH6 Electrical characteristics 2 Electrical characteristics TC= 25 °C unless otherwise specified. Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0, ID = -1 mA Typ. -30 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA RDS(on) Static drain-source on-resistance VGS = 0, VDS = -30 V, TC = 125 Unit V VGS = 0, VDS = -30 V IDSS Max. °C(1) -1 -1 µA -10 µA -100 nA -2 V VGS = -10 V, ID = -4.5 A 12 15 mΩ VGS = -4.5 V, ID = -4.5 A 18.0 22.5 mΩ Min. Typ. Max. Unit - 2615 - pF - 340 - pF - 235 - pF - 24 - nC - 9 - nC - 8 - nC Min. Typ. Max. Unit - 13.2 - ns 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = -25 V, f = 1 MHz, VGS = 0 V VDD = -15 V ID = -9 A, VGS = -4.5 V (see Figure 13. Gate charge test circuit) Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Test conditions VDD = -15 V, ID = -4.5 A, Rise time RG = 4.7 Ω, VGS = -10 V - 93 - ns Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 50 - ns - 18 - ns Min. Typ. Max. Unit -1.1 V Fall time Table 6. Source drain diode Symbol VSD (1) Parameter Test conditions Forward on voltage ISD = -4.5 A, VGS = 0 - trr Reverse recovery time VDD = -24 V, TJ = 150 °C, - 20 ns Qrr Reverse recovery charge ISD = -4.5 A, di/dt = 100 A/µs - 16 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - -1.6 A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DS10146 - Rev 3 page 3/13 STS9P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area GIPG0903166B3PSSOA ID (A) Operation in this area is limited by R DS(on) K 10 1 GIPG0903166B3PSZTH 0.05 10 -1 t p =10 ms t p =100 µs 10 0 t p =1 s T j ≤150 °C T c = 25°C single pulse 10 -1 10 -1 10 -2 10 0 V DS (V) 10 1 10 -3 10 -4 Figure 3. Output characteristics ID (A) V GS = 7,8,9,10 V V GS = 6 V V GS = 4 V V DS =5 V 80 60 60 40 40 V GS = 3 V 20 20 1 2 3 4 V DS (V) Figure 5. Gate charge vs gate-source voltage V GS (V) GIPG1503166B3PDQVG 10 0 0 4 5 6 7 V GS (V) GIPG0903166B3P9RID V GS =10 V 13 4 11 2 10 30 3 R DS(on) (mΩ) 12 20 2 Figure 6. Static drain-source on-resistance 6 10 1 14 V DD = 15 V ID=9A 8 DS10146 - Rev 3 GIPG180320161101TCH 100 80 0 0 t p (s) 10 0 120 100 0 0 10 -1 ID (A) 140 V GS = 5 V 120 10 -2 Figure 4. Transfer characteristics GIPG180320161003OCH 140 10 -3 40 50 Q g (nC) 9 10 15 20 25 30 35 40 I D (A) page 4/13 STS9P3LLH6 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations C (pF) GIPG0903166B3PDCVR V GS(th) (norm.) GIPG0903166B3PDVTH 1.1 I D = 250 µA C ISS 1.0 10 3 0.9 f = 1 MHz 0.8 C OSS C RSS 10 2 0 5 10 15 20 25 30 0.7 0.6 -75 V DS (V) V (BR)DSS (norm.) GIPG1003166B3PDRON 1.50 1.25 1.04 1.00 1.00 0.75 0.96 0 75 125 T j (°C) GIPG0903166B3PDBDV 1.08 V GS = 10 V 0.50 -50 -25 25 Figure 10. Normalized V(BR)DSS vs temperature Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) -25 I D = 1 mA 0.92 -75 25 50 75 100 125 150 ID (A) -25 25 75 125 T j (°C) Figure 11. Source-drain diode forward characteristics V SD (V) GIPG0903166B3PDSDF 1.0 T j = -55 °C 0.9 T j = 25 °C 0.8 0.7 T j = 175 °C 0.6 0.5 0.4 2 Note: DS10146 - Rev 3 4 6 8 10 12 I SD (A) For the P-channel Power MOSFET, current and voltage polarities are reversed. page 5/13 STS9P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS10146 - Rev 3 page 6/13 STS9P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SO-8 package information Figure 15. SO-8 package outline 0016023_So-807_fig2_Rev10 DS10146 - Rev 3 page 7/13 STS9P3LLH6 SO-8 package information Table 7. SO-8 mechanical data Dim. mm Min. Typ. Max. A 1.75 A1 0.10 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 0.25 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0° 8° ccc 0.10 Figure 16. SO-8 recommended footprint (dimensions are in mm) 0016023_So-807_footprint_Rev10 DS10146 - Rev 3 page 8/13 STS9P3LLH6 SO-8 packing information 4.2 SO-8 packing information Figure 17. SO-8 tape and reel dimensions D A N T Po Bo Ko Ao P 0016023_SO-8_O7_T_R Figure 18. Tape orientation DS10146 - Rev 3 page 9/13 STS9P3LLH6 SO-8 packing information Table 8. SO-8 tape and reel mechanical data Dim. mm Min. Typ. A 330 C 12.8 D 20.2 N 60 T DS10146 - Rev 3 Max. 13.2 - 22.4 Ao 6.5 6.7 Bo 5.4 5.6 Ko 2.0 2.2 Po 3.9 4.1 P 7.9 8.1 page 10/13 STS9P3LLH6 Revision history Table 9. Document revision history Date Revision 22-Jan-2014 1 Changes Initial release. Modified: title and RDS(on) max value in cover page. 15-Mar-2016 2 Modified: Table 4: "On/off states", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode". Minor text changes. Updated Internal schematic. 17-Feb-2021 3 Updated Section 4.2 SO-8 packing information. Minor text changes. DS10146 - Rev 3 page 11/13 STS9P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 SO-8 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS10146 - Rev 3 page 12/13 STS9P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS10146 - Rev 3 page 13/13