STSA851

® STSA851 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Code STSA851 STSA851-AP s Marking SA851 SA851 Package / Shipment TO-92 / Bulk TO-92 / Ammopack s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED APPLICATIONS: EMERGENCY LIGHTING s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS s TO-92 DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0 ) Collector Current Collector Peak Current (t p < 5 m s) Base Current Total Dissipation at T amb = 2 5 o C Storage Temperature Max. Operating Junction Temperature Value 150 60 7 5 15 1 1.1 -65 to 150 150 Unit V V V A A A W o o C C September 2003 1/8 STSA851 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max 114 83.3 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0 ) Emitter Cut-off Current (I C = 0 ) Test Conditions V CB = 1 20 V V CB = 1 20 V V EB = 7 V I C = 1 00 µ A 150 T j = 1 00 o C Min. Typ. Max. 50 1 10 Unit nA µA nA V V (BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0 ) V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 1 0 mA 60 V I E = 1 00 µ A 7 V IC IC IC IC = = = = 1 00 mA 1A 2A 5A IB = 5 m A I B = 5 0 mA I B = 5 0 mA I B = 2 00 mA I B = 2 00 mA V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V I C = 1 00 mA f = 1 MHz 150 150 90 30 10 70 140 320 1 0.89 300 270 140 50 130 47 50 120 200 450 1.15 1 mV mV mV mV V V V BE(sat) ∗ V BE(on) ∗ h FE ∗ Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain IC = 4 A IC = 4 A IC IC IC IC = = = = 1 0 mA 2A 5A 10 A 350 fT C CBO Transition frequency Collector-Base Capacitance RESISTIVE LOAD Turn- on Time Storage Time Fall Time V CE = 10 V V CB = 1 0 V MHz pF t ON ts tf IC = 1 A I B1 = - I B2 = 0 .1 A V CC = 1 0 V 50 1.35 120 ns µs ns ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/8 STSA851 Derating Curve DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 3/8 STSA851 Switching Times Resistive Load Switching Times Resistive Load Switching Times Resistive Load Switching Times Inductive Load Switching Times Inductive Load 4/8 STSA851 Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/8 STSA851 TO-92 MECHANICAL DATA mm MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 1.14 0.41 4 degree TYP. MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 6 degree MIN. 0.170 0.014 0.175 0.130 0.095 0.045 0.500 0.085 0.045 0.016 4 degree inch TYP. MAX. 0.195 0.020 0.194 0.155 0.105 0.055 0.609 0.094 0.059 0.022 6 degree DIM. 6/8 STSA851 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P mm TYP. inch TYP. MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 12.70 6.35 2.54 18.00 6.00 9.00 16.00 4.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 MIN. 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.728 0.610 0.150 0.500 0.250 0.100 0.709 0.236 0.354 0.630 0.157 MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 0.039 3.00 -1.00 0.118 -0.039 7/8 STSA851 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8