STT3P2UH7

STT3P2UH7 P-channel 20 V, 0.087 Ω typ., 3 A STripFET™ H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features    SOT23-6L Order code VDS RDS(on) max ID STT3P2UH7 20 V 0.1 Ω @ 4.5 3A Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications Figure 1: Internal schematic diagram  Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel For the P-channel Power MOSFET, current and voltage polarities are reversed. September 2016 DocID025027 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STT3P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 5 2/13 SOT23-6L package mechanical data .............................................. 10 Revision history ............................................................................ 12 DocID025027 Rev 3 STT3P2UH7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ±8 V ID Drain current (continuous) at Tpcb = 25 °C 3 A ID Drain current (continuous) at Tpcb = 100 °C 1.9 A IDM(1) Drain current (pulsed) 12 A PTOT Total dissipation at Tpcb = 25 °C 1.6 W Tstg Storage temperature range - 55 to 150 °C Tj Operating junction temperature range Notes: (1)Pulse width limited by safe operating area Table 3: Thermal data Symbol Rthj-pcb(1) Parameter Thermal resistance junction-pcb max, single operation Value Unit 78 °C/W Notes: (1)When mounted on 1inch² FR-4 board, 2 oz Cu For the P-channel Power MOSFET, current and voltage polarities are reversed. DocID025027 Rev 3 3/13 Electrical characteristics 2 STT3P2UH7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS = 0 IDSS Zero gate voltage drain current VDS = 20 V, VGS = 0 1 µA IGSS Gate-body leakage current VGS = ± 8 V, VDS = 0 10 nA Gate threshold voltage VDS = VGS, ID = 250 µA 1 V VGS(th) RDS(on) Test conditions Static drain-source on-resistance Min. Typ. Max. 20 Unit V 0.4 VGS = 4.5 V, ID = 1.5 A 0.087 0.1 Ω VGS = 2.5 V, ID = 1.5 A 0.11 0.13 Ω VGS = 1.8 V, ID = 1.5 A 0.145 0.18 Ω Min. Typ. Max. Unit - 510 - pF - 66 - pF - 44 - pF - 4.8 - nC - 0.7 - nC - 0.8 - nC Min. Typ. Max Unit - 9 - ns - 21 - ns - 40 - ns - 19 - ns Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 10 V, f = 1 MHz, VGS = 0 VDD = 10 V, ID = 3 A, VGS = 4.5 V (see Figure 14: "Gate charge test circuit") Table 6: Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 10 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") For the P-channel Power MOSFET, current and voltage polarities are reversed. 4/13 DocID025027 Rev 3 STT3P2UH7 Electrical characteristics Table 7: Source drain diode Symbol VSD(1) Parameter Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions Min. Typ. Max. Unit ISD = 1 A, VGS = 0 - - 1 V VDD = 10 V di/dt = 100 A/µs, ISD = 1 A Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 12.5 ns - 5 nC - 0.8 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%. For the P-channel Power MOSFET, current and voltage polarities are reversed. DocID025027 Rev 3 5/13 Electrical characteristics 2.1 STT3P2UH7 Electrical characteristics (curves) For the P-channel Power MOSFET, current and voltage polarities are reversed. Figure 3: Thermal impedance Figure 2: Safe operating area GIPG300920141326MT ID (A) δ 0.2 is ) ea ar S ( o n his R D t i n ax n o ym ati er d b Op ite m i L 10 100µs 0.1 0.05 10µs 1 0.02 1ms 0.01 pcb 0.1 Tj=150°C Tpcb=25°C Single pulse 0.01 0.1 1 10 V DS(V) Figure 5: Transfer characteristics Figure 4: Output characteristics GIPG011020141520MT ID (A) 7 V DS=2V 6 5 4 3 2 1 0 0 6/13 DocID025027 Rev 3 1 2 V GS(V) STT3P2UH7 Electrical characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance GIPG031020140945MT R DS(on) (mΩ) V GS=4.5V 92 91 90 89 88 87 86 85 0 0.5 1 2 1.5 2.5 ID(A) Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature GIPG031020141106MT R DS(on) (norm) 1.5 GIPG031020141114MT V (BR)DSS (norm) V GS=4.5V ID=1m A 1.06 1.4 1.04 1.3 1.2 1.02 1.1 1.00 1 0.9 0.98 0.8 0.96 0.7 0.6 -75 0 50 75 125 T J(°C) 0.94 -75 DocID025027 Rev 3 -25 25 75 125 T J(°C) 7/13 Electrical characteristics STT3P2UH7 Figure 12: Source-drain diode forward characteristics 8/13 DocID025027 Rev 3 STT3P2UH7 3 Test circuits Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times DocID025027 Rev 3 9/13 Package mechanical data 4 STT3P2UH7 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 SOT23-6L package mechanical data Figure 16: SOT23-6L package drawing 7049714_K 10/13 DocID025027 Rev 3 STT3P2UH7 Package mechanical data Table 8: SOT23-6L package mechanical data mm Dim. Min. Typ. A Max. 1.25 A1 0.00 0.15 A2 1.00 b 0.36 0.50 C 0.14 0.20 D 2.826 2.926 3.026 E 1.526 1.626 1.726 e 0.90 0.95 1.00 H 2.60 2.80 3.00 L 0.35 0.45 0.60 θ 0° 1.10 1.20 8° Figure 17: SOT23-6L recommended footprint 7049714_K_footprint DocID025027 Rev 3 11/13 Revision history 5 STT3P2UH7 Revision history Table 9: Document revision history 12/13 Date Revision Changes 18-Jul-2013 1 First release. 03-Oct-2014 2 Document status promoted from target data to production data. Updated title, features and description in cover page. Updated Section 2: "Electrical characteristics" and Section 4.1: "SOT23-6L package mechanical data". Minor text changes. 12-Sep-2016 3 Updated Table 2: "Absolute maximum ratings". Minor text changes. DocID025027 Rev 3 STT3P2UH7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID025027 Rev 3 13/13