STT4NF30L

® STT4NF30L N - CHANNEL 30V - 0.055Ω - 4A - TSOP-6 STripFET™ MOSFET PRELIMINARY DATA TYPE STT4NF 30L s s V DSS 30 V R DS(on) < 0.065 Ω ID 4A s TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs TSOP-6 I NTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o o Value 30 30 ± 20 4 2.5 16 2 Un it V V V A A A W (•) Pulse width limited by safe operating area November 1998 1/5 STT4NF30L THERMAL DATA R thj -amb TJ T s tg (*)Thermal Resistance Junction-ambient Maximum O perating Junction Temperature Storage T emperature Max 62.5 150 -55 to 150 o C/W o C o C (*) Mounted on FR-4 board (t ≤ 5 sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Con ditions ID = 250 µ A Min. 1 Typ. 1.7 0.055 0.06 4 Max. 2.5 0.065 0.09 Unit V Ω Ω A V GS = 10V ID = 2 A V GS = 4.5V I D = 2 A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =6 A V GS = 0 Min. Typ. 6 420 62 20 550 80 30 Max. Unit S pF pF pF 2/5 STT4NF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 15 V ID = 2 A R G =4.7 Ω V GS = 4.5 V (see test circuit, figure 3) V DD = 24 V ID = 4 A V GS = 4.5 V Min. Typ. 13 30 8 3.2 2.6 Max. 17 40 12 Unit ns ns nC nC nC SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 24 V I D = 4 A R G =4.7 Ω V GS = 4.5 V (see test circuit, figure 5) Min. Typ. 6 9 20 Max. 8 12 26 Unit ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A V GS = 0 22 13 1.2 I SD = 4 A di/dt = 100 A/ µ s o Tj = 150 C V DD = 15 V (see test circuit, figure 5) Test Con ditions Min. Typ. Max. 4 16 1.2 Unit A A V ns nC A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STT4NF30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/5 STT4NF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5