STT4P3LLH6

STT4P3LLH6 Datasheet P-channel 30 V, 48 mΩ typ., 4 A, STripFET H6 Power MOSFET in an SOT23-6L package Features • • • • SOT23-6L D (1,2,5,6) Order code VDS RDS(on) max. ID STT4P3LLH6 30 V 56 mΩ at 10 V 4A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications • Switching applications Description G (3) This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S (4) PG3D1256S4 Product status link STT4P3LLH6 Product summary Order code STT4P3LLH6 Marking 4K3L Package SOT23-6L Packing Tape and reel DS9649 - Rev 3 - December 2021 For further information contact your local STMicroelectronics sales office. www.st.com STT4P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tamb = 25 °C 4 Drain current (continuous) at Tamb = 100 °C 2.5 IDM (1) Drain current (pulsed) 16 A PTOT Total power dissipation at Tamb = 25 °C 1.6 W Tstg Storage temperature range -55 to 150 °C Value Unit 78 °C/W ID TJ Operating junction temperature A 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol RthJA (1) Parameter Thermal resistance, junction-to-ambient 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 s. Note: DS9649 - Rev 3 For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. page 2/12 STT4P3LLH6 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 250 µA Typ. 30 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 0 V, VDS = 30 V, TC = 125 Unit V VGS = 0 V, VDS = 30 V IDSS Max. 1 °C(1) 10 1.0 µA 100 nA 2.5 V VGS = 10 V, ID = 2 A 48 56 VGS = 4.5 V, ID = 2 A 75 90 Min. Typ. Max. Unit - 639 - pF - 79 - pF - 52 - pF - 6 - nC - 1.9 - nC - 2.1 - nC Min. Typ. Max. Unit - 5.4 - ns mΩ 1. Defined by design, not subject to production test. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 15 V, ID = 4 A, VGS = 4.5 V (see Figure 13. Gate charge test circuit) Table 5. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Test conditions VDD = 15 V, ID = 2 A, Rise time RG = 4.7 Ω, VGS = 10 V - 5 - ns Turn-off delay time (see Figure 12. Switching times test circuit for resistive load) - 19.2 - ns - 3.4 - ns Min. Typ. Max. Unit 1.1 V Fall time Table 6. Source-drain diode Symbol VSD (1) Parameter Test conditions Forward on voltage ISD = 4 A, VGS = 0 V - trr Reverse recovery time ISD = 4 A, di/dt = 100 A/µs, - 11.2 ns Qrr Reverse recovery charge VDD = 16 V, TJ = 150 °C - 3.5 nC IRRM Reverse recovery current (see Figure 14. Test circuit for inductive load switching and diode recovery times) - 0.6 A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DS9649 - Rev 3 page 3/12 STT4P3LLH6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Normalized transient thermal impedance GIPG041220140838ALS K GIPG041220140851ALS δ = 0.5 D S( on ) 100µs 10-1 δ = 0.1 δ = 0.05 δ = 0.02 1ms Zth = k Rthj-amb δ = tp / Ƭ is 10 O p lim era ite tion d by in t m his ax a R rea δ = 0.2 10ms 1 10-2 δ = 0.01 SINGLE PULSE Tj=150°C Tamb=25°C Single pulse 0.1 0.1 10 1 VDS(V) 10-3 10-5 10-4 10-3 tp 10-1 10-2 Ƭ 100 tp(s) Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics ID (A) ID (A) GIPG170920140950FSR VGS=10V GIPG170920141543FSR 40 40 VDS= 7V VGS=7V 30 VGS=6V 30 20 VGS=5V 20 VGS=4V 10 0 0 10 VGS=3V 2 4 6 VDS(V) Figure 5. Typical gate charge vs gate-source voltage VGS (V) GIPG170920141552FSR 12 10 0 2 4 6 8 10 VGS(V) Figure 6. Typical static drain-source on-resistance RDS(on) (mΩ) GIPG170920141558FSR VGS=10V 55 VDD = 15 V ID = 5 A 50 8 6 45 4 40 2 0 0 DS9649 - Rev 3 5 10 15 Qg(nC) 35 0 1 2 3 4 5 ID(A) page 4/12 STT4P3LLH6 Electrical characteristics (curves) Figure 7. Normalized breakdown voltage vs temperature V(BR)DSS Figure 8. Typical capacitance characteristics GIPG290820141412MT (norm) ID=250µA 1.08 GIPD071020141032FSR C (pF) 800 1.06 Ciss 600 1.04 1.02 400 1.00 0.98 200 0.96 0.94 0.92 -75 -25 25 175 TJ(°C) 125 75 0 0 GIPG290820141351MT (norm) GIPG290820141400MT RDS(on) (norm) ID=250µA 1.1 20 Figure 10. Normalized on-resistance vs temperature Figure 9. Normalized gate threshold voltage vs temperature VGS(th) 10 Coss Crss VDS(V) VGS=10V 1.6 1.0 1.4 0.9 1.2 0.8 1.0 0.7 0.6 0.8 0.5 0.6 0.4 -75 -25 25 75 125 0.4 -75 175 TJ(°C) -25 25 75 125 175 TJ(°C) Figure 11. Typical reverse diode forward characteristics GIPD081020141131FSR VSD (V) Tj= -50°C 0.9 Tj= 25°C 0.8 0.7 Tj= 150°C 0.6 0.5 Note: DS9649 - Rev 3 0 1 2 3 4 5 ISD(A) For the P-channel Power MOSFET, current and voltage polarities are reversed. page 5/12 STT4P3LLH6 Test circuits 3 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit Figure 14. Test circuit for inductive load switching and diode recovery times DS9649 - Rev 3 page 6/12 STT4P3LLH6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 SOT23-6L package information Figure 15. SOT23-6L package outline c A1 θ L H A E e D b e A2 Table 7. SOT23-6L package mechanical data Dimensions Millimeters Ref. Min. Typ. A DS9649 - Rev 3 Max. 1.25 A1 0 0.15 A2 1.0 b 0.36 0.50 C 0.14 0.20 D 2.826 2.926 3.026 E 1.526 1.626 1.726 e 0.90 0.95 1.00 H 2.60 2.80 3.00 L 0.35 0.45 0.60 θ 0 1.10 1.20 8 page 7/12 STT4P3LLH6 SOT23-6L package information Figure 16. Footprint recommendations, dimensions in mm (inches) Figure 17. Marking layout (refer to ordering information table for marking) 0.60 (0.024) 1.20 (0.047) 3.50 (0.138) 2.30 (0.091) X X X X 0.95 (0.037) 1.10 (0.043) Figure 18. Package orientation in reel Figure 20. Reel dimensions (mm) DS9649 - Rev 3 Figure 19. Tape and reel orientation Figure 21. Inner box dimensions (mm) page 8/12 STT4P3LLH6 SOT23-6L package information Figure 22. Tape outline GADG101220211254SA Dimension mm Figure 23. Reel outline GADG101220211310SA DS9649 - Rev 3 page 9/12 STT4P3LLH6 Revision history Table 8. Document revision history Date Version 09-May-2013 1 Changes First revision. Text edits throughout document On cover page: – changed title description – updated Features – updated Description 09-Dec-2014 2 Updated Table 4 In Table 5, changed values and test conditions In Table 6, changed values and test conditions In Table 7, changed values and test conditions Added Section 2.1: Electrical characteristics (curves) Updated Section 3: Test circuits Updated Section 4: Package mechanical data 10-Dec-2021 DS9649 - Rev 3 3 Updated Section 4 Package information. Minor text changes. page 10/12 STT4P3LLH6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4.1 SOT23-6L package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS9649 - Rev 3 page 11/12 STT4P3LLH6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9649 - Rev 3 page 12/12