STT5N2VH5

STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in a SOT23-6L package Datasheet — production data Features Order code VDS RDS(on) max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 4 5 6 1.6 W • Very low profile package 3 2 • Conduction losses reduced 1 • Switching losses reduced SOT23-6L • 2.5 V gate drive • Very low threshold device Applications Figure 1. Internal schematic diagram • Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Table 1. Device summary Order code Marking Packages Packaging STT5N2VH5 STD1 SOT23-6L Tape and reel March 2014 This is information on a product in full production. DocID026116 Rev 1 1/13 www.st.com Contents STT5N2VH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID026116 Rev 1 STT5N2VH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ±8 V ID(1) Drain current (continuous) at Tpcb = 25 °C 5 A ID (1) Drain current (continuous) at Tpcb = 100 °C 3.1 A Drain current (pulsed) 20 A Total dissipation at Tpcb = 25 °C 1.6 W IDM (1)(2) PTOT (1) Tstg Storage temperature °C - 55 to 150 Tj Max. operating junction temperature °C 1. This value is rated according to Rthj-pcb 2. Pulse width is limited by safe operating area Table 3. Thermal data Symbol Rthj-pcb(1) Parameter Thermal resistance junction-pcb max Value Unit 78 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 10 sec. DocID026116 Rev 1 3/13 13 Electrical characteristics 2 STT5N2VH5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. 20 VGS = ± 8 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on-resistance Unit V VDS = 20 V Zero gate voltage drain current (VGS = 0) VDS = 20 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 1 μA 10 μA ± 100 nA 0.7 V VGS = 4.5 V, ID = 2 A 0.025 0.03 Ω VGS = 2.5 V, ID = 2 A 0.031 0.04 Ω Min. Typ. Max. Unit - 367 - pF - 92 - pF - 16 - pF - 4.6 - nC - 0.9 - nC - 1 - nC Min. Typ. Max. Unit - 4.8 - ns - 14.4 - ns - 17 - ns - 4 - ns Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 16 V, f = 1 MHz, VGS = 0 VDD = 16 V, ID = 2 A, VGS = 4.5 V (see Figure 14) Table 6. Switching times Symbol td(on) Test conditions Voltage delay time tr (V) Voltage rise time td (off) Current fall time tf 4/13 Parameter VDD = 16 V, ID = 2 A, RG = 4.7 Ω, VGS = 4.5 V (see Figure 15 and Figure 18) Crossing time DocID026116 Rev 1 STT5N2VH5 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 5 A ISDM (1) Source-drain current (pulsed) - 20 A VSD (2) Forward on voltage ISD = 2 A, VGS = 0 - 1.1 V trr Reverse recovery time - 10 ns Qrr Reverse recovery charge - 24 nC IRRM Reverse recovery current ISD = 2 A, di/dt = 100 A/μs VDD = 16 V, Tj = 150 °C (see Figure 18) - 4.8 A ISD 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID026116 Rev 1 5/13 13 Electrical characteristics 2.1 STT5N2VH5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18141v1 ID (A) i th δ=0.5 0.2 s in n m io at by r d pe O mite Li 10 is ea ) a r S(on D R ax AM18127v1 K 100µs 0.1 10 -1 0.05 1ms 0.02 pcb 0.01 10 -2 1 10ms Single pulse Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 VDS(V) 10 Figure 4. Output characteristics 10 -3 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s) Figure 5. Transfer characteristics AM18128v1 ID (A) VGS=2.5, 3.5, 4.5, 5.5, 6.5 V AM18129v1 ID (A) VDS=4V 20 20 1.5V 16 16 12 12 8 8 4 4 0.5V 0 0 0 2 1 3 4 VDS(V) Figure 6. Gate charge vs gate-source voltage AM18130v1 VGS (V) VDD=10V ID=2A 0.2 0 0.4 0.6 0.8 1 1.2 VGS(V) Figure 7. Static drain-source on-resistance AM18132v1 RDS(on) (mΩ) VGS=4.5V 26 6 25.6 25.2 4 24.8 2 24.4 0 0 6/13 24 2 4 6 Qg(nC) DocID026116 Rev 1 1 1.5 2 2.5 3 3.5 ID(A) STT5N2VH5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM18133v1 C (pF) AM18134v1 VGS(th) (norm) 1.2 ID=250µA Ciss 1 0.8 100 Coss 0.6 0.4 0.2 Crss 0 -55 -30 -5 10 0 4 12 8 16 VDS(V) Figure 10. Normalized on-resistance vs temperature AM18135v1 RDS(on) 20 45 70 95 120 TJ(°C) Figure 11. Normalized V(BR)DSS vs temperature AM18136v1 V(BR)DSS (norm) (norm) ID=2A VGS=10V 1.6 ID=1mA 1.1 1.4 1.2 1.05 1 0.8 1 0.6 0.4 0.95 0.2 0 -55 -30 -5 20 45 70 95 120 TJ(°C) 0.9 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM18137v1 VSD (V) TJ=-55°C 0.9 0.8 TJ=25°C 0.7 0.6 TJ=150°C 0.5 0.4 0.3 0.5 1.5 2.5 3.5 4.5 ISD(A) DocID026116 Rev 1 7/13 13 Test circuits 3 STT5N2VH5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID026116 Rev 1 10% AM01473v1 STT5N2VH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026116 Rev 1 9/13 13 Package mechanical data STT5N2VH5 Figure 19. SOT23-6L package drawing 7049714_K 10/13 DocID026116 Rev 1 STT5N2VH5 Package mechanical data Table 8. SOT23-6L package mechanical data mm Dim. Min. Typ. A Max. 1.25 A1 0.00 0.15 A2 1.00 b 0.36 0.50 C 0.14 0.20 D 2.826 2.926 3.026 E 1.526 1.626 1.726 e 0.90 0.95 1.00 H 2.60 2.80 3.00 L 0.35 0.45 0.60 θ 0 °C 1.10 1.20 8 °C Figure 20. SOT23-6L recommended footprint(a) 7049714_K_footprint a. All dimensions are in millimeters DocID026116 Rev 1 11/13 13 Revision history 5 STT5N2VH5 Revision history Table 9. Document revision history 12/13 Date Revision 20-Mar-2014 1 Changes First release. Part number previously included in datasheet DocID023799 DocID026116 Rev 1 STT5N2VH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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