STT5PF20V

STT5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT23-6L 2.5V-DRIVE STripFET™ II POWER MOSFET TYPE STT5PF20V ■ ■ ■ ■ VDSS RDS(on) ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. ) (s ) s ( ct u d o SOT23-6L r P e t e l o s b O INTERNAL SCHEMATIC DIAGRAM t c u APPLICATIONS ■ MOBILE PHONE APPLICATIONS ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT d o r P e t e l o s b O ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STT5PF20V STPN SOT23-6L TAPE & REEL October 2003 1/8 STT5PF20V ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 20 V Drain-gate Voltage (RGS = 20 kΩ) 20 V Gate- source Voltage ±8 V ID Drain Current (continuous) at TC = 25°C 5 A ID Drain Current (continuous) at TC = 100°C 3.1 A Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C 1.6 W IDM (
) PTOT (
) Pulse width limited by safe operating area ) s ( ct Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max 78 Max. Operating Junction Temperature 150 Storage Temperature °C/W u d o °C Pr –55 to 150 e t e ol °C ELECTRICAL CHARACTERISTICS (TJ = 25 °C UNLESS OTHERWISE SPECIFIED) OFF bs Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA ±100 nA Max. Unit IDSS IGSS Gate-body Leakage Current (VDS = 0) r P e t e l o O ) Min. Typ. Parameter Min. Unit V VGS = ± 8V Test Conditions Max. 20 s ( t c u d o ON (1) Symbol Test Conditions Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 4.5V, ID = 2.5 A 0.065 0.080 Ω VGS = 2.5V, ID = 2.5 A 0.085 0.10 Ω Typ. Max. Unit s b O 0.45 V DYNAMIC 2/8 Symbol Parameter gfs (1) Forward Transconductance VDS = 15 V , ID = 2.5 A Test Conditions Min. 6.6 S Ciss Input Capacitance VDS = 15 V, f = 1 MHz, VGS = 0 412 pF C oss Output Capacitance 179 pF Crss Reverse Transfer Capacitance 42.5 pF STT5PF20V ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 11 ns Rise Time VDD = 10 V, ID = 2.5 A RG = 4.7Ω VGS = 2.5 V (see test circuit, Figure 1) 47 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 5 A, VGS = 2.5V (see test circuit, Figure 2) 4.5 0.73 1.75 nC nC nC Turn-on Delay Time SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Turn-off-Delay Time Fall Time Min. Typ. VDD = 10 V, ID = 2.5 A, RG = 4.7Ω, VGS = 2.5 V (see test circuit, Figure 1) ISD ISDM VSD (1) trr Qrr IRRM Parameter P e Test Conditions Source-drain Current t e l o Source-drain Current (pulsed) Forward On Voltage ISD = 5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD = 16 V, Tj = 150°C (see test circuit, Figure 3) ) (s Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. s b O Min. Typ. ns ns Max. Unit 5 A 20 A 1.2 32 12.8 0.8 Unit (s) t c u d o r SOURCE DRAIN DIODE Symbol Max. 38 20 V ns nC A t c u d o r P e t e l o s b O 3/8 STT5PF20V Safe Operating Area Thermal Impedence Junction-PCB ) s ( ct u d o r P e Output Characteristics Transfer Characteristics t e l o ) (s s b O t c u d o r P e t e l o Transconductance s b O 4/8 Static Drain-source On Resistance STT5PF20V Gate Charge vs Gate-source Voltage Capacitance Variations ) s ( ct Normalized Gate Thereshold Voltage vs Temp. u d o r P e Normalized On Resistance vs Temperature t e l o ) (s s b O t c u d o r P e t e l o Source-drain Diode Forward Characteristics s b O 5/8 STT5PF20V Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 2: Gate Charge test Circuit ) s ( ct u d o r P e Fig. 3: Test Circuit For Diode Recovery Behaviour t e l o ) (s t c u d o r P e t e l o s b O 6/8 s b O STT5PF20V TSOP-6 MECHANICAL DATA mm DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 D 2.80 3.10 0.110 E 2.60 3.00 E1 1.50 1.75 L 0.35 0.55 e 0.95 e1 1.90 r P e t e l o ) s ( ct u d o 0.008 e t e ol 0.102 bs Pr 0.122 0.118 0.059 0.069 0.014 0.022 0.037 O ) 0.075 s ( t c u d o A A2 s b O mils e A1 b L c E e1 D E1 7/8 STT5PF20V ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8