STT6N3LLH6

STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDSS RDS(on) max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 STT6N3LLH6 5 6 30 V 3 2 1 0.036 Ω (VGS= 4.5 V) • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) SOT23-6L • High avalanche ruggedness • Low gate drive power losses Figure 1. Internal schematic diagram Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1. Device summary Order code Marking Package Packaging STT6N3LLH6 STG1 SOT23-6L Tape and reel March 2014 This is information on a product in full production. DocID023012 Rev 3 1/12 www.st.com Contents STT6N3LLH6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 DocID023012 Rev 3 STT6N3LLH6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tpcb = 25 °C 6 A ID Drain current (continuous) at Tpcb = 100 °C 3.75 A Drain current (pulsed) 24 A Total dissipation at TC = 25 °C 1.6 W 0.013 W/°C -55 to 150 °C 150 °C Value Unit 78 °C/W IDM (1) PTOT Derating factor Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Rthj-pcb(1) Thermal resistance junction-pcb max 1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec DocID023012 Rev 3 3/12 12 Electrical characteristics 2 STT6N3LLH6 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown Voltage ID = 250 μA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 30 V VDS = 30 V, Tc = 125 °C IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA Static drain-source onresistance VGS = 10 V, ID = 3 A 0.021 0.025 Ω RDS(on) VGS = 4.5 V, ID = 3 A 0.032 0.036 Ω Min. Typ. Max. Unit - 283 - pF - 61 - pF - 31 - pF - 3.6 - nC - 1.5 - nC - 1.1 - nC V(BR)DSS 30 V 1 10 μA μA ±100 nA 1 V Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 24 V, f=1 MHz, VGS = 0 VDD = 10 V, ID = 6 A VGS = 4.5 V Figure 14 Table 6. Switching on/off (inductive load) Symbol td(on) tr td(off) tf 4/12 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 10 V, ID = 3 A, RG = 4.7 Ω, VGS = 4.5 V Figure 13 Fall time DocID023012 Rev 3 Min. Typ. Max. Unit - 4.8 - ns - 11.2 - ns - 9.4 - ns - 5.4 - ns STT6N3LLH6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit - 6 24 A A 1.1 V ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD =6 A, VGS = 0 - trr Reverse recovery time - 10.6 - ns Qrr Reverse recovery charge - 2.8 - nC IRRM Reverse recovery current ISD = 6 A, di/dt = 100 A/μs, VDD = 16 V, TJ=150 °C Figure 15 - 0.5 - A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID023012 Rev 3 5/12 12 Electrical characteristics 2.1 STT6N3LLH6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15373v1 ID (A) AM15363v1 K s=0.5 s ai are n) his DS(o t n R n i ax tio m era d by p O ite Lim 100 10 10 0.2 0.1 10 -1 0.05 0.02 1 10ms Tj=150°C Tc=25°C 0.1 100ms 1s 10 Zthj-pcb=K*Rthj-pcb, Rthj-pcb=78 C/W 0.01 -2 Single pulse Single pulse 0.01 0.1 VDS(V) 10 1 Figure 4. Output characteristics VGS=5, 6, 7, 8, 9, 10V 4V 20 16 16 12 12 3V 8 8 4 4 2 3 4 VDS(V) Figure 6. Gate charge vs gate-source voltage AM15358v1 VGS (V) VDD=10V 10 -1 10 10 0 2 1 tp(s) 10 10 AM15369v1 VDS=3 V 0 1 -2 10 ID (A) 20 0 0 10-3 Figure 5. Transfer characteristics AM15361v1 ID (A) 10 -3 -4 10 0 1 3 2 4 VGS(V) Figure 7. Static drain-source on-resistance RDS(on) (mΩ) ID=6A AM15372v1 VGS= 4.5 V 40 35 8 30 25 6 20 4 15 10 2 5 0 0 0 6/12 2 4 6 Qg(nC) DocID023012 Rev 3 2 4 6 8 10 12 ID(A) STT6N3LLH6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized on-resistance vs temperature AM15370v1 C (pF) f= 1 MHz Ciss 1.6 1.4 100 AM15360v1 RDS(on) (norm) 1.8 Coss 1.2 Crss 1 ID= 3 A VGS= 10 V 0.8 10 0.6 0.4 0.2 1 0 20 10 VDS(V) 00 -55 -30 -5 20 45 70 95 120 145 TJ(°C) Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized V(BR)DSS vs temperature temperature AM15368v1 VGS(th) (norm) AM15364v1 V(BR)DSS (norm) 1.2 1.15 ID =250 µA ID = 1mA 1.1 1 1.05 0.8 1 0.6 0.95 0.4 0.9 0.2 0.85 0 -55 -30 -5 20 45 70 95 120 145 TJ(°C) 0.8 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM15365v1 VSD (V) TJ=-55°C 1 0.9 0.8 TJ=25°C 0.7 0.6 TJ=150°C 0.5 0.4 0.3 0.2 0 2 4 6 8 10 ISD(A) DocID023012 Rev 3 7/12 12 Test circuits 3 STT6N3LLH6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 DocID023012 Rev 3 10% AM01473v1 STT6N3LLH6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 19. SOT23-6L package drawing 7049714_K_FU DocID023012 Rev 3 9/12 12 Package mechanical data STT6N3LLH6 Table 8. SOT23-6L package mechanical data mm Dim. Min. Typ. A Max. 1.25 A1 0.00 0.15 A2 1.00 b 0.36 0.50 C 0.14 0.20 D 2.826 2.926 3.026 E 1.526 1.626 1.726 e 0.90 0.95 1.00 H 2.60 2.80 3.00 L 0.35 0.45 0.60 θ 0° 1.10 1.20 8° Figure 20. SOT23-6L recommended footprint(a) 7049714_K_footprint_FU a. All dimensions are in millimeters 10/12 DocID023012 Rev 3 STT6N3LLH6 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 11-Oct-2012 1 First release. 24-Oct-2013 2 Modified: RDS(on) value on : Features table and in Table 4. Document status promoted from preliminary to production data. 11-Mar-2014 3 Updated Section 4: Package mechanical data. Minor text changes DocID023012 Rev 3 11/12 12 STT6N3LLH6 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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