STT7P2UH7

STT7P2UH7 P-channel 20 V, 0.0195 Ω typ., 7 A STripFET™ H7 Power MOSFET in a SOT23-6L package Datasheet - production data    Very low on-resistance Very low capacitance and gate charge High avalanche ruggedness Applications  Switching applications Description SOT23-6L This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Figure 1: Internal schematic diagram Table 1: Device summary Order code Marking STT7P2UH7 7L2U Package Packaging SOT23-6L Tape and reel For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. Features Order code STT7P2UH7 October 2014 VDS 20 V RDS(on) max 0.0225 Ω @ 4.5 V ID 7A DocID025142 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STT7P2UH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package mechanical data ............................................................... 9 4.1 5 2/13 SOT23-6L package mechanical data .............................................. 10 Revision history ............................................................................ 12 DocID025142 Rev 3 STT7P2UH7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ±8 V ID Drain current (continuous) at Tpcb = 25 °C 7 A ID Drain current (continuous) at Tpcb = 100 °C 4.4 A Drain current (pulsed) 28 A PTOT Total dissipation at Tpcb = 25 °C 1.6 W Tstg Storage temperature - 55 to 150 °C 150 °C IDM (1) Tj Max. operating junction temperature Notes: (1) Pulse width limited by safe operating area Table 3: Thermal data Symbol Rthj-pcb (1) Parameter Thermal resistance junction-pcb max Value Unit 78 °C/W Notes: (1) When mounted on 1inch² FR-4 board, 2 oz Cu For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. DocID025142 Rev 3 3/13 Electrical characteristics 2 STT7P2UH7 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage VGS = 0, ID = 250 µA IDSS Zero gate voltage drain current VGS = 0, VDS = 20 V 1 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 5 V ±5 µA Gate threshold voltage VDS = VGS, ID = 250 µA 1 V V(BR)DSS VGS(th) RDS(on) Static drain-source on-resistance 20 V 0.4 VGS= 4.5 V, ID = 3.5 A 0.0195 0.0225 Ω VGS= 2.5 V, ID = 3.5 A 0.02 0.025 Ω VGS= 1.8 V, ID = 3.5 A 0.036 0.043 Ω VGS= 1.5 V, ID = 3.5 A 0.05 0.085 Ω Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0, VDS = 16 V, f = 1 MHz VDD = 16 V, ID = 7 A, VGS = 4.5 V Min. Typ. Max. Unit - 2390 - pF - 220 - pF - 188 - pF - 22 - nC - 4.2 - nC - 3.6 - nC Min. Typ. Max Unit - 12.5 - ns - 30.5 - ns - 128 - ns - 84.5 - ns Table 6: Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 16 V, ID = 7 A, RG = 1 Ω, VGS = 4.5 V Fall time DocID025142 Rev 3 STT7P2UH7 Electrical characteristics Table 7: Source drain diode Symbol ISD ISDM Parameter Test conditions Min. (2) Max. Unit Source-drain current - 7 A Source-drain current (pulsed) - 28 A 1 V (1) VSD Typ. Forward on voltage ISD = 1 A, VGS = 0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 16 V di/dt = 100 A/ms, ISD = 1A - 15.8 ns - 5.9 nC - 0.7 A Notes: (1) (2) Pulse width limited by safe operating area. Pulsed: pulse duration = 300 ms, duty cycle 1.5% For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. DocID025142 Rev 3 5/13 Electrical characteristics 2.1 STT7P2UH7 Electrical characteristics (curves) Figure 3: Thermal impedance Figure 2: Safe operating area ID (A) GIPG210520141158SA K GIPG210520141148SA δ=0.5 100µs is ) ea ar S(on D his nt xR i n ma o i y at er d b Op ite m Li 10 0.2 1ms 10 0.1 -1 0.05 10ms 0.02 1 10 0.01 -2 0.1 Tj=150°C Tpcb=25°C Single pulse 0.01 0.1 1 Single pulse 10 V DS(V) 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s) Figure 5: Transfer characteristics Figure 4: Output characteristics GIPG210520141044SA ID(A) -3 GIPG210520141055SA ID (A) V GS=2.5, 3, 3.5, 4, 4.5, 5V V DS=2V 20 12.00 2V 15 8.00 10 1.5V 4.00 5 0 0 2 6 4 8 0.00 V DS(V) Figure 6: Gate charge vs gate-source voltage 1 2 1.5 V GS(V) Figure 7: Static drain-source on-resistance GIPG280520141717SA V GS (V) 0.5 0 GIPG210520141102SA R DS(on) (mΩ) V GS=4.5V V DD=16V ID=7A 4 20.5 20.0 3 19.5 2 19.0 1 0 0 6/13 18.5 18.0 5 10 15 20 Q g(nC) DocID025142 Rev 3 0 1 2 3 4 5 6 ID(A) STT7P2UH7 Electrical characteristics Figure 9: Normalized gate threshold voltage vs temperature Figure 8: Capacitance variations GIPG210520141108SA C (pF) GIPG210520141114SA V GS(th) (norm) ID=250µ A 1.4 1.2 Ciss 1 1000 0.8 0.6 Coss Crss 0.4 100 0 4 8 12 16 V DS(V) 0.2 -75 125 T J(°C) GIPG210520141132SA V (BR)DSS (norm) GIPG290520141553SA ID=3.5 A V GS=4.5V 1.4 75 25 Figure 11: Normalized V(BR)DSS vs temperature Figure 10: Normalized on-resistance vs temperature R DS(on) (norm) 1.6 -25 ID=1m A 1.04 1.2 1.0 1 0.8 0.6 0.96 0.4 0.2 0.0 -75 -25 25 0.92 -75 125 T J(°C) 75 -25 25 75 125 T J(°C) Figure 12: Source-drain diode forward characteristics GIPG210520141134SA V SD(V) T J=-55°C 0.9 TJ=25°C 0.8 T J=75°C 0.7 0.6 0.5 1 2 3 4 5 DocID025142 Rev 3 6 7 8 ISD(A) 7/13 Test circuits 3 STT7P2UH7 Test circuits Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times 8/13 DocID025142 Rev 3 STT7P2UH7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID025142 Rev 3 9/13 Package mechanical data 4.1 STT7P2UH7 SOT23-6L package mechanical data Figure 16: SOT23-6L package drawing 7049714_K 10/13 DocID025142 Rev 3 STT7P2UH7 Package mechanical data Table 8: SOT23-6L package mechanical data mm Dim. Min. Typ. A Max. 1.25 A1 0.00 0.15 A2 1.00 b 0.36 0.50 C 0.14 0.20 D 2.826 2.926 3.026 E 1.526 1.626 1.726 e 0.90 0.95 1.00 H 2.60 2.80 3.00 L 0.35 0.45 0.60 θ 0 °C 1.10 1.20 8 °C Figure 17: SOT23-6L recommended footprint 7049714_K_footprint DocID025142 Rev 3 11/13 Revision history 5 STT7P2UH7 Revision history Table 9: Document revision history 12/13 Date Revision Changes 26-Aug-2013 1 First release. 04-Jun-2014 2 Document status promoted from target data to production data Modified: title Modified: RDS(on) max value in cover page Modified: RDS(on) (typical and maximum) values in Table 4: "On /off states" Modified: the entire typical values in Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Added: Section 2.1: "Electrical characteristics (curves)" Updated: Section 4.1: "SOT23-6L package mechanical data" Minor text changes 02-Oct-2014 3 Updated title, features and description in cover page. Updated Table 4: "On /off states". Minor text changes. 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All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID025142 Rev 3 13/13