STTA112

® STTA112U TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 1A 1200V 65ns 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION ANDRECTIFICATION ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5kHz square tp = 10ms sinusoidal Value 1200 6 10 20 - 65 to + 150 125 Unit V A A A °C °C They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitablefor the secondaryof SMPSas high voltage rectifier diodes. SMB TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 5A 1/8 STTA112U THERMAL AND POWER DATA Symbol Rth(j-I) P1 Pmax Parameter Junction to lead thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 0.8A δ = 0.5 Tlead= 93°C Tlead= 90°C Test conditions Value 23 1.4 1.5 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF = 1A VR = 0.8 x VRRM Ip < 3.IF(AV) Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.1 90 Max 1.65 1.5 10 300 1.15 350 Unit V µA V mΩ ** Vto Rd Test pulses : To evaluatethe maximum conduction losses use the following equation : P = Vto x I F(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR = 30V Tj = 125 °C VR = 600V dIF/dt = -8 A/µs dIF/dt = -50 A/µs Tj = 125 °C VR = 600V dIF/dt = -50 A/µs IF = 1A 1.8 5 IF =1A 0.7 Min Typ 65 115 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr VFp Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25°C IF = 1 A, dIF/dt = 8 A/µs measured at 1.1 × VF max Min Typ Max 900 35 Unit ns V 2/8 STTA112U Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (Maximum values). IFM(A) δ = 0.1 δ = 0.2 δ = 0.5 P1(W) 1.50 1.25 50.0 Tj=125°C 10.0 1.00 0.75 0.50 0.25 0.00 0.0 0.1 0.2 0.3 IF(av) (A) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 δ= 1 1.0 VFM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 3: Relative variation of thermal transient impedance junction to lead versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 20 40 60 dIF/dt(A/ µs) IF=2*IF(av) VR=600V Tj=125°C 80 100 120 140 160 180 200 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). Fig. 6: Softness factor (tb/ta) versus dIF/dt (Typical values). trr(ns) 300 IF=2*IF(av) S factor 1.00 VR =600V Tj=125°C I F