STTA1212

® STTA1212D TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 12A 1200V 50 ns 2.0 V K FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. K A TO-220AC DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5kHz square tp = 10ms sinusoidal Value 1200 30 160 100 - 65 to + 150 150 Unit V A A A °C °C They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 5B 1/8 STTA1212D THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 12A δ =0.5 Tc= 95°C Tc= 89°C Test conditions Value 1.9 29.2 32.1 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Vto Rd Test pulses : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF =12A VR =0.8 x VRRM Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Min Typ 1.35 0.8 Max 2.2 2.0 100 5.0 1.57 36 Unit V V µA mA V mΩ Ip < 3.IF(AV) Tj = 125 °C To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 600V dIF/dt = -96 A/µs dIF/dt = -500 A/µs IF =12A 18 30 / 1.2 Min Typ 50 100 A Max Unit ns IRM S factor Tj = 125 °C VR = 600V IF = 12A dIF/dt = -500 A/µs TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =12 A, dIF/dt = 96 A/µs measured at 1.1 × VFmax Tj = 25°C IF =12A, dIF/dt = 96 A/µs IF =40A, dIF/dt = 500 A/µs Min Typ Max 900 V 30 40 Unit ns VFp Peak forward voltage 2/8 STTA1212D Fig. 1: Conductionlosses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) δ = 0.1 δ = 0.2 δ = 0.5 P1(W) 30 25 20 15 10 5 IF(av) (A) 0 0 2 4 6 8 10 12 14 1.0 δ=1 100.0 Tj=125°C 10.0 VFM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 50 40 30 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 0.4 0.2 δ = 0.2 δ = 0.1 Single pulse 20 10 tp(s) 1E-2 1E-1 1E+0 IF=0.5*IF(av) 0.0 1E-4 dIF/dt(A/µs) 0 0 100 200 300 400 500 1E-3 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 500 450 400 350 300 250 200 150 100 50 0 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 1.40 VR=600V Tj=125°C IF=2*IF(av) IF