STTA1512PI

® STTA1512P/PI TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE : DOP3I Electrical insulation : 2500VRMS Capacitance : 12pF DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5kHz square tp = 10ms sinusoidal Value 1200 50 220 150 - 65 to + 150 150 Unit V A A A °C °C They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. A A K 15A 1200V 55ns 1.9V K K SOD93 STTA1512P Isolated DOP3I STTA1512PI TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 5A 1/9 STTA1512P/PI THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation IF(AV) = 15A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) SOD93 DOP3I SOD93 DOP3I SOD93 DOP3I Tc= 95°C Tc= 78°C Tc= 89 Tc= 70°C Conditions Value 1.6 2.1 34 38 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF =15A VR =0.8 x VRRM Ip < 3.IF(AV) Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Tj = 125 °C Min Typ 1.3 1.3 Max 2.1 1.9 100 6.0 1.48 25 Unit V V µA mA V mΩ Vto Rd Test pulses : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x I F2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 600V dIF/dt = -120 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 600V dIF/dt = -500 A/µs IF =15A 20 33 IF =15A 1.2 / Min Typ 55 105 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =15 A, dIF/dt = 120 A/µs measured at 1.1 × VFmax Tj = 25°C IF =15A, dIF/dt = 120 A/µs IF =40A, dIF/dt = 500 A/µs Min Typ Max 900 V 30 40 Unit ns VFp Peak forward voltage 2/9 STTA1512P/PI Fig. 1: Conduction losses versus average current. P1(W) 40 30 δ = 0.1 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) 200 100 Tj=125°C 20 10 IF(av) (A) 0 0 2 4 6 8 10 12 14 δ=tp/T T 10 tp VFM(V) 20 16 18 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 50 40 30 VR=600V Tj=125°C IF=2*IF(av) Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 IF=IF(av) 0.4 δ = 0.2 20 IF=0.5*IF(av) δ = 0.1 0.2 10 Single pulse tp(s) 1E-2 1E-1 1E+0 0 0 100 0.0 1E-4 dIF/dt(A/ µs) 200 300 400 500 1E-3 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). trr(ns) 800 700 600 500 400 300 200 IF=0.5*IF(av) IF=IF(av) IF=2*IF(av) VR=600V Tj=125°C S factor 2.00 IF