STTA2006PI

® STTA2006P/PI TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 20A 600V 30ns 1.5V K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. INSULATED PACKAGE : DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range tp = 5 µs F = 5kHz square tp=10 ms sinusoidal Value 600 600 50 270 180 150 -65 to 150 Unit V V A A A °C °C and is particularly suitable and efficient in Motor control freewheelapplicationsand in booster diode applications in power factor control circuitries. Packaged either in SOD93 or in DOP3I, these 600V devices are particularly intended for use on 240V domestic mains. A K K A SOD93 STTA2006P Isolated DOP3I STTA2006PI Maximum operating junction temperature TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 3D 1/8 STTA2006P/PI THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation IF(AV) = 20A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Test conditions SOD93 DOP3I SOD93 DOP3I SOD93 DOP3I Tc= 96°C Tc= 74°C Tc= 90°C Tc= 66°C Value 1.5 2.1 36 40 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Test conditions IF =20A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.25 2.5 Max 1.75 1.5 100 6 1.15 17 Unit V V µA mA V mΩ ** Vto rd Test pulse : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 400V dIF/dt = -160 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 400V dIF/dt = -500 A/µs IF =20A 12.5 17.5 IF =20A 0.42 / Min Typ 30 60 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =20A, dIF/dt = 160 A/µs measured at, 1.1 × VFmax Min Typ Max 600 V 12 Unit ns VFp Peak forward voltage Tj = 25°C IF =20A, dIF/dt = 160 A/µs 2/8 STTA2006P/PI Fig. 1: Conduction losses versus average current. P1(W) 50 Fig. 2: Forward voltage drop versus forward current. VFM(V) 3.50 T MAXIMUM VALUES 3.00 40 30 20 =0.5 =0.1 = 0. 2 2.50 =tp/T tp Tj=125 oC 2.00 =1 1.50 1.00 0.50 IFM(A) 10 0 0 IF(av)(A) 2 4 6 8 10 12 14 16 18 20 0.00 0.1 1 10 100 200 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 40.0 37.5 90% CONFIDENCE Tj=125 oC 35.0 VR=400V 32.5 IF= 40A 30.0 27.5 25.0 22.5 IF=20A 20.0 17.5 15.0 I F=10A 12.5 10.0 7.5 5.0 2.5 dIF/dt(A/ s) 0.0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Reverse recovery time versus dIF/dt. trr(ns) 250 90% CONFIDENCE Tj=125oC 225 VR=400V 200 175 I F=40A 150 125 IF=20A 100 75 I F= 10A 50 25 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 6: Softness factor (tb/ta) versus dIF/dt. S factor 1.2 Typical values Tj=125 oC 1.1 1.0 IF