STTA206

® STTA206S TURBOSWITCH ™ "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 2A 600V 20ns 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS SURFACE MOUNT DEVICE SMC DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH "A" family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "Freewheel Mode" operations and is particulary suitable and efficient ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM IF(RMS) IFRM Tj Tstg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current (tp = 5 µs, f = 5kHz) Maximum operating junction temperature Storage temperature range Value 600 600 8 50 125 - 65 to + 150 Unit V V A A °C °C in Motor Control Freewheel applications and in Booster diode applications in Power Factor Control circuitries. Packaged in SMC surface mount envelope, these 600V devices are particularly intended for use on 240V domestic mains. TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 2D 1/8 STTA206S THERMAL AND POWER DATA Symbol Rth(j-I) P1 Parameter Junction to lead Conduction power dissipation (see fig. 2) Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 1.5A δ = 0.5 Tlead= 72°C Tlead= 67°C Conditions Value 21 2.5 Unit °C/W W Pmax 2.8 W STATIC ELECTRICAL CHARACTERISTICS (see Fig. 2) Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Test Conditions IF = 2A VR = 0.8 x VRRM Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min Typ 1.1 400 Max 1.75 1.5 20 1200 Unit V µA ** Test pulses widths : * tp = 380 µs, duty cycle < 2% ** tp = 5 ms , duty cycle < 2% DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING (see Fig. 3) Symbol trr Parameter Reverse recovery time Maximum recovery current Softness factor Test Conditions Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR = 30V Tj = 125°C VR = 400V dIF/dt = -16 A/µs dIF/dt = -50 A/µs Tj = 125°C VR = 400V dIF/dt = -50 A/µs IF = 2A 1.2 2.0 IF = 2A TBD Min Typ 20 50 A Max Unit ns IRM S factor TURN-ON SWITCHING (see Fig.8) Symbol tfr VFp Parameter Forward recovery time Peak forward voltage Test Conditions Tj = 25°C IF = 1 A dIF/dt = 8 A/µs measured at, 1.1 × VF max Min Typ Max 500 10 Unit ns V 2/8 STTA206S APPLICATION DATA The TURBOSWITCHTM "A" is especially designed to provide the lowest overall power losses in any "Freewheel Mode" application (see fig. 1) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode P1 Watts (Fig. 2) REVERSE LOSSES in the diode P2 Watts (Fig. 2) SWITCHING LOSSES in the diode OFF : P3 Watts ON : P4 Watts (Fig. 3 & 4) SWITCHING LOSSES in the transistor due to the diode P2 Watts (Fig. 3) Fig. 1 : "FREEWHEEL" MODE SWITCHING TRANSISTOR DIODE: TURBOSWITCH "A" IL VR t T F = 1/T = t/T LOAD 3/8 STTA206S APPLICATION DATA (Cont’d) Fig. 2 : STATIC CHARACTERISTICS Conduction losses : I P1 = Vt0 x IF(AV) + Rd x IF2(RMS) IF Rd VR V IR V tO VF with Vt0 = 1.15 V Rd = 0.175 Ohm (Max values at 125°C) Reverse losses : P2 = VR x IR x (1 - δ) Fig. 3 : TURN-OFF CHARACTERISTICS V IL TRANSISTOR I t Turn-on losses : (in the transistor, due to the diode) P5 = VR × IRM 2 × (3 + 2 × S) × F 6 x dIF ⁄ dt VR × IRM × IL × (S + 2) × F + 2 × dIF ⁄ dt I dI F /dt V I RM ta tb t dI R /dt VR trr = ta + tb I dIF /dt = VR /L V IRM ta tb t dI R /dt VR trr = ta + tb S = tb/ta DIODE S = tb / ta RECTIFIER OPERATION Turn-off losses (in the diode) : P3 = VR × IRM 2 × S × F 6 x dIF ⁄ dt P3 and P5 are suitable for power MOSFET and IGBT 4/8 STTA206S APPLICATION DATA (Cont’d) Fig. 4 : TURN-ON CHARACTERISTICS IF dI F /dt I Fmax Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F t 0 VF V Fp 1.1V F 0 tfr VF t Ratings and characteristics curves are ON GOING. Fig. 5: Conduction losses versus average current. P1(W) 3.0 2.5 2.0 1.5 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 6: Switching OFF losses versus dIF/dt. 0.35 0.30 0.25 P3(W) Tj=125°C F=20KHz VR=400V IL=4A δ=1 0.20 0.15 IL=2A 1.0 0.5 IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.10 0.05 0.00 0 20 40 60 80 dIF/dt(A/us) 100 120 140 160 180 200 Fig. 7: Switching ON losses versus dIF/dt. 0.2 Fig. 8: Switching losses in transistor due to the diode. P5(W) 5.0 4.5 Tj=125°C F=20KHz VR=400V IL=4A P4(W) Tj=125°C F=100KHz IF=IF(AV) 0.15 4.0 3.5 3.0 0.1 2.5 2.0 IL=2A 0.05 dIF/dt(A/us) 0 0 20 40 60 80 100 120 140 160 180 200 1.5 1.0 0.5 0.0 0 20 40 60 dIF/dt(A/us) 80 100 120 140 160 180 200 5/8 STTA206S Fig. 9: Forward voltage drop versus forward current (maximum values). IFM(A) Fig. 10: Relative variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout). Zth(j-a) (°C/W) 1E+0 δ = 0.5 5E+1 1E+1 Tj=125°C δ = 0.2 δ = 0.1 1E+0 Tj=25°C 1E-1 1E-1 VFM(V) 1E-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Single pulse T tp(s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 δ=tp/T tp 1E+2 5E+2 Fig. 11: Peak reverse recovery current versus dIF/dt (90% confidence). 10 9 8 7 6 5 4 3 2 1 0 IRM(A) Fig. 12: Reverse recovery time versus dIF/dt (90% confidence). 300 trr(ns) VR=400V Tj=125°C VR=400V Tj=125°C IF=2*IF(av) 250 200 IF=IF(av) 150 IF=2*IF(av) 100 50 IF=IF(av) dIF/dt(A/µs) 0 50 100 150 200 0 0 20 40 dIF/dt(A/µs) 60 80 100 120 140 160 180 200 Fig. 13: Softness factor (tb/ta) versus dIF/dt (typical values). 1.8 1.6 1.4 1.2 1.0 S factor IF