STTA306B-TR

STTA306B ® TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. A NC DPAK DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particulary suitable and efficient in motor control freewheel applications and in booster diode applications in Power Factor Control circuitries. Packaged in DPAK, these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current tp=5 µs F=5 kHz square Value Unit 600 V 6 A 20 A IFRM Repetitive peak forward current IFSM Surge non repetitive forward current tp=10 ms sinusoidal 35 A Maximum operating junction temperature 125 °C - 65 to + 150 °C Tj Tstg Storage temperature range TM : TURBOSWITCH is a trademark from STMicroelectronics November 1999 - Ed: 3C 1/8 STTA306B THERMAL AND POWER DATA Symbol Rth (j-c) P1 Pmax Parameter Tests conditions Value Unit 6 °C/W Junction to case Conduction power dissipation IF(AV) = 1.5A, δ = 0.5 Tc = 110°C 2.5 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tc = 108°C 2.8 W STATIC ELECTRICAL CHARACTERISTICS ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Symbol Parameter VF ** Forward voltage drop Tests conditions Tj = 25°C IF = 3 A Tj = 125°C IF = 3 A Reverse leakage current Tj = 25°C VR = 0.8 X VRRM Vto Threshold voltage Ip < 3.IF(AV) Rd Dynamic resistance IR * Test pulse : Min. Tj = 125°C Typ. 1.3 Unit 1.85 V 1.65 µA 20 500 Tj = 125°C Max. 1200 1.15 V 175 mΩ * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameter Tj = 25°C trr IRM S factor Test conditions Maximum reverse recovery current Softness factor Tj = 125°C Tj = 125°C IF=0.5A IR=1A Irr=0.25A IF=1A dIF/dt= -50A/µs VR=30V IF=3A VR=400V dIF/dt = -16A/µs dIF/dt = -50A/µs IF=3A VR=400V dIF/dt = -50A/µs Min. Typ. Max. Unit 20 ns 50 A 1.2 2.0 1.1 - TURN-ON SWITCHING Symbol tfr VFP 2/8 Parameter Forward recovery time Peak forward voltage Test conditions Min. Typ. Max. Unit Tj = 25°C IF=3A dIF/dt = 16A/µs Measured at 1.1 x VFmax 500 ns Tj = 25°C IF=2A dIF/dt = 16A/µs 10 V STTA306B Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). P1(W) IFM(A) 3.0 5E+1 δ = 0.1 2.5 δ = 0.2 δ = 0.5 δ = 0.05 1E+1 Tj=125°C 2.0 Tj=25°C δ=1 1E+0 1.5 1.0 1E-1 0.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Fig. 3: Relative variation of thermal transient impedance junction to ambient versus pulse duration (recommended pad layout). 1E+0 1E-2 0.0 7 s ( t c Single pulse 1E-3 1E-3 1E-2 1E-1 ete l o s du o r P tp(s) 1E+0 1E+1 T (s) δ=tp/T tp 1E+2 5E+2 5 b O - d o r P e t c u t e l o trr(ns) 300 bs 250 2.0 2.5 o r P 3.0 3.5 ) s t( e t e l e t le 2 1 0 c u d o r P IF=2*IF(av) 0 IF=IF(av) dIF/dt(A/µs) 20 40 60 80 100 120 140 160 180 200 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). S factor IF