STTA306B

® STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 3A 600 V 20 ns 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. A NC DPAK DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particulary suitable and efficient in motor control ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tj Tstg Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current tp=5 µs F=5 kHz square Value 600 6 20 35 125 - 65 to + 150 Unit V A A A °C °C freewheel applications and in booster diode applications in Power Factor Control circuitries. Packaged in DPAK, these 600V devices are particularly intended for use on 240V domestic mains. Surge non repetitive forward current tp=10 ms sinusoidal Maximum operating junction temperature Storage temperature range TM : TURBOSWITCH is a trademark from STMicroelectronics November 1999 - Ed: 3C 1/8 STTA306B THERMAL AND POWER DATA Symbol Rth (j-c) P1 Pmax Parameter Junction to case Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 1.5A, δ = 0.5 Tc = 110°C Tc = 108°C Tests conditions Value 6 2.5 2.8 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF ** IR * Vto Rd Test pulse : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Ip < 3.IF(AV) Tj = 125°C IF = 3 A IF = 3 A VR = 0.8 X VRRM Min. Typ. 1.3 500 Max. 1.85 1.65 20 1200 1.15 175 Unit V µA V mΩ To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Tj = 25°C Test conditions IF=0.5A IR=1A Irr=0.25A IF=1A dIF/dt= -50A/µs VR=30V IF=3A VR=400V dIF/dt = -16A/µs dIF/dt = -50A/µs IF=3A VR=400V dIF/dt = -50A/µs Min. Typ. Max. Unit 20 50 A 1.2 2.0 1.1 ns IRM Maximum reverse recovery current Softness factor Tj = 125°C S factor Tj = 125°C TURN-ON SWITCHING Symbol tfr VFP Parameter Forward recovery time Peak forward voltage Tj = 25°C Tj = 25°C Test conditions IF=3A dIF/dt = 16A/µs Measured at 1.1 x VFmax IF=2A dIF/dt = 16A/µs Min. Typ. Max. Unit 500 10 ns V 2/8 STTA306B Fig. 1: Conduction losses versus average current. P1(W) 3.0 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) 5E+1 2.5 2.0 1.5 1.0 0.5 δ = 0.05 1E+1 Tj=125°C δ=1 Tj=25°C 1E+0 1E-1 IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1E-2 0.0 0.5 1.0 1.5 VFM(V) 2.0 2.5 3.0 3.5 Fig. 3: Relative variation of thermal transient impedance junction to ambient versus pulse duration (recommended pad layout). 1E+0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) VR=400V Tj=125°C IF=2*IF(av) Zth(j-a) (°C/W) δ = 0.5 δ = 0.2 9 8 7 6 5 4 1E-1 δ = 0.1 IF=IF(av) 1E-2 Single pulse 3 T 2 1 dIF/dt(A/µs) 0 20 40 60 80 100 120 140 160 180 200 tp tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 δ=tp/T 0 1E+2 5E+2 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 350 300 250 200 150 100 50 0 0 20 IF=IF(av) IF=2*IF(av) VR=400V Tj=125°C Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). 1.6 1.4 1.2 1.0 0.8 0.6 S factor IF