STTA512B-TR

® STTA512D/F/B TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO THE FOLLOWINGOPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE : ISOWATT220AC Electrical insulation : 2000V DC Capacitance : 12pF. DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performancesthey also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mode” operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature TO-220AC / DPAK ISOWATT220AC tp = 5 µs F = 5kHz square tp = 10ms sinusoidal They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. 5A K 1200V 45ns 2.0V A K K A TO-220AC STTA512D ISOWATT220AC STTA512F K A NC DPAK STTA512B Value 1200 1200 20 10 70 45 - 65 to + 150 150 Unit V V A A A A °C °C TURBOSWITCH is a trademark of STMicroelectronics. November 1999 - Ed: 4A 1/10 STTA512D/F/B THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case thermal resistance Conduction power dissipation IF(AV) = 5A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC/DPAK ISOWATT220AC TO-220AC/DPAK Tc= 102 °C ISOWATT220AC Tc= 84°C TO-220AC/DPAK Tc= 98°C ISOWATT220AC Tc= 78°C Conditions Value 4.0 5.5 12 13 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF =5A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.35 0.3 Max 2.2 2.0 100 2.0 1.57 86 Unit V V µA mA V mΩ ** Vto Rd Test pulses : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 600V dIF/dt = -40 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 600V dIF/dt = -500 A/µs IF =5A 7.5 20 IF =5A 1.2 / Min Typ 45 95 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Test conditions Tj = 25°C IF =5 A, dIF/dt = 40 A/µs measured at 1.1 × VFmax Min Typ Max 900 V 35 50 Unit ns VFp Peak forward voltage Tj = 25°C IF =5A, dIF/dt = 40 A/µs IF =40A, dIF/dt = 500 A/µs 2/10 STTA512D/F/B Fig. 1: Conductionlosses versus average current. Fig. 1: Forward voltage drop versus forward current (maximum values). IFM(A) δ = 0.1 δ = 0.2 δ = 0.5 P1(W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 100.00 Tj=125°C 10.00 δ=1 1.00 0.10 IF(av) (A) 0 1 2 3 4 5 6 VFM(A) 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 3: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 40 VR=600V Tj=125°C Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC and DPAK). Zth(j-c)/Rth(j-c) 1.0 30 20 10 IF=2*IF(av) 0.8 IF=IF(av) 0.6 δ = 0.5 0.4 0.2 δ = 0.2 δ = 0.1 Single pulse dIF/dt(A/ µs) 0 0 100 200 300 400 500 tp(s) 1E-3 1E-2 1E-1 1E+0 0.0 1E-4 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AC). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 400 350 300 250 IF=2*IF(av) VR=600V Tj=125°C 200 150 100 tp(s) 1E-2 1E-1 1E+0 1E+1 50 0 0 100 IF=IF(av) 0.4 0.2 δ = 0.2 δ = 0.1 Single pulse 0.0 1E-3 dIF/dt(A/ µs) 200 300 400 500 3/10 STTA512D/F/B Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). S factor 1.40 1.20 1.00 0.80 0.60 VR=600V Tj=125°C IF