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STTA512FP

STTA512FP

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    ITO220FP-2

  • 描述:

    DIODE GEN PURP 1.2KV 5A TO220FP

  • 数据手册
  • 价格&库存
STTA512FP 数据手册
® STTA512D/F/B/FP TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS n 5A 1200V 45ns 2.0V A K A K K n n n n n n SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGES: ISOWATT220AC, TO-220FPAC Electrical insulation : 2000V DC Capacitance : 12pF. TO-220AC STTA512D ISOWATT220AC STTA512F K A NC A K DPAK STTA512B TO-220FPAC STTA512FP DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mode” operations. ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current TO-220AC / DPAK ISOWATT220AC / TO-220FPAC IFRM IFSM Tstg Tj Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5kHz square tp = 10ms sinusoidal They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. Value 1200 1200 20 10 70 45 - 65 to + 150 150 Unit V V A A A A °C °C TURBOSWITCH is a trademark of STMicroelectronics. August 2003 - Ed: 5B 1/10 STTA512D/F/B/FP THERMAL AND POWER DATA Symbol Rth(j-c) Parameter Junction to case thermal resistance TO-220AC / DPAK ISOWATT220AC / TO-220FPAC P1 Conduction power dissipation IF(AV) = 5A δ =0.5 TO-220AC / DPAK Tc= 102°C ISOWATT220AC / Tc= 84°C TO-220FPAC 13 W Conditions Value 4.0 5.5 12 W Unit °C/W Pmax Total power dissipation TO-220AC / DPAK Tc= 98°C Pmax = P1 + P3 (P3 = 10% P1) ISOWATT220AC / Tc= 78°C TO-220FPAC STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance Test conditions IF =5A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Min Typ 1.35 0.3 Max 2.2 2.0 100 2.0 1.57 86 Unit V V µA mA V mΩ ** Vt0 Rd Pulse test: * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 600V dIF/dt = -40 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 600V dIF/dt = -500 A/µs IF =5A 7.5 20 IF =5A 1.2 / Min Typ 45 95 A Max Unit ns IRM Sfactor TURN-ON SWITCHING Symbol Parameter tfr Forward recovery time Test conditions Tj = 25°C IF =5 A, dIF/dt = 40 A/µs measured at 1.1 × VFmax Min Typ Max 900 Unit ns VFp Peak forward voltage Tj = 25°C IF =5A, dIF/dt = 40 A/µs IF =40A, dIF/dt = 500 A/µs V 35 50 2/10 STTA512D/F/B/FP Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) δ = 0.1 δ = 0.2 δ = 0.5 P1(W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 100.00 Tj=125°C 10.00 δ=1 1.00 0.10 IF(av) (A) 0 1 2 3 4 5 6 VFM(A) 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 3: Peak reverse recovery current versus dIF/dt (90% confidence). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC and DPAK). Zth(j-c)/Rth(j-c) 1.0 IRM(A) 40 VR=600V Tj=125°C IF=2*IF(av) 30 20 10 dIF/dt(A/µs) 0 0 100 200 300 400 500 IF=IF(av) 0.8 0.6 δ = 0.5 0.4 0.2 δ = 0.2 δ = 0.1 Single pulse tp(s) 1E-3 1E-2 1E-1 1E+0 0.0 1E-4 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (ISOWATT220AC and TO-220FPAC). Zth(j-c)/Rth(j-c) Fig. 6: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 400 350 VR=600V Tj=125°C 1.0 0.8 0.6 δ = 0.5 300 250 IF=2*IF(av) 200 150 100 IF=IF(av) 0.4 0.2 δ = 0.2 δ = 0.1 Single pulse tp(s) 50 0.0 1E-3 1E-2 1E-1 1E+0 1E+1 0 dIF/dt(A/µs) 0 100 200 300 400 500 3/10 STTA512D/F/B/FP Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). S factor 1.40 1.20 1.00 0.80 VR=600V Tj=125°C IF
STTA512FP 价格&库存

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