STTA9012TV2

® STTA9012TV1/2 TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 nH. INSULATED PACKAGE : Electrical insulation : 2500VRMS Capacitance : < 45pF. DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mode” operations. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM T stg Tj Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5kHz square tp = 10ms sinusoidal Value 1200 1200 150 700 420 - 65 to + 150 150 Unit V V A A A °C °C They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. 2 x 45A 1200V 65ns 1.85V K1 A1 K2 A1 K2 A2 A2 K1 STTA9012TV1 STTA9012TV2 ISOTOPTM ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics. November1999 - Ed: 6B 1/8 STTA9012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Test conditions Per diode Total Coupling P1 Pmax Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 45A δ =0.5 Tc= 70°C Tc= 62°C Value 0.85 0.48 0.1 94 104 W W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * IR ** Vto Rd Test pulses : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% Test conditions IF =45A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.3 3 Max 2.05 1.85 200 12 1.57 6 Unit V µA mA V mΩ To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS (per diode) TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 600V dIF/dt = -360 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 600V dIF/dt = -500 A/µs IF =45A 60 50 IF =45A 1.2 Min Typ 65 115 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =45 A, dIF/dt = 360 A/µs measured at 1.1 × VFmax Tj = 25°C IF =45A, dIF/dt = 360 A/µs IF =45A, dIF/dt = 500 A/µs Min Typ Max 900 V 30 30 Unit ns VFp Peak forward voltage 2/8 STTA9012TV1/2 Fig. 1: Conduction losses versus average current (per diode). P1(W) 100 80 δ=1 δ = 0.1 δ = 0.2 δ = 0.5 Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125°C 100 60 40 T 10 20 IF(av) (A) 0 0 5 10 15 20 25 30 35 δ=tp/T tp VFM(V) 50 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 40 45 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 δ = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 80 70 60 50 40 30 20 IF=0.5*IF(av) VR=600V Tj=125°C IF=IF(av) IF=2*IF(av) 0.4 δ = 0.2 0.2 δ = 0.1 Single pulse tp(s) 1E-2 1E-1 1E+0 5E+0 10 0 0 100 0.0 1E-3 dIF/dt(A/ µs) 200 300 400 500 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 1000 800 600 400 200 dIF/dt(A/ µs) IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) VR=600V Tj=125°C Fig. 6: Softness factor (tb/ta) versus dI F/dt (typical values). S factor 1.60 1.40 1.20 1.00 0.80 0.60 dIF/dt(A/ µs) 0 100 200 300 400 500 IF