STTH1002CSF

STTH1002CSF Datasheet 200 V, dual 5 A ultrafast rectifier Features • • • 175 °C maximum operation junction temperature High surge current capability ECOPACK2 compliant component Application • • • DC/DC converters Freewheeling diodes LED Lighting Description The STTH1002CSF has been developed for applications requiring an optimized VF and reverse recovery characteristics. These characteristics make it ideal for use in secondary rectification functions, such as DC/DC converters or lighting applications. Product status link STTH1002CSF Product summary Symbol Value IF(AV) 2X5A VRRM 200 V trr(max) 27 ns Tj (max.) 175 °C VF (typ.) 0.79 V DS13535 - Rev 1 - October 2020 For further information contact your local STMicroelectronics sales office. www.st.com STTH1002CSF Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Value Unit 200 V Per diode Tc = 160 °C 5 Per device Tc = 160 °C 10 tp = 10 ms sinusoidal 85 A -65 to +175 °C +175 °C Maximum operating junction temperature range A Table 2. Thermal resistance parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Typ. Per diode 2.45 Per device 1.66 Unit °C/W 0.87 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations When the diodes 1 and 2 are used simultaneously: ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Static electrical characteristics (per diode) Symbol IR(1) Parameter Reverse leakage current Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C VF(2) Forward voltage drop Tj = 125 °C Tj = 25 °C Tj = 125 °C VR = VRRM IF = 5 A IF = 10 A Min. Typ. - Max. 4 - 4 40 - 0.91 1.05 - 0.79 0.91 - 1.02 1.17 - 0.90 1.04 Unit µA V 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.78 x IF(AV) + 0.026 x IF2(RMS) For more information, please refer to the following application notes related to the power losses: • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses in a power diode DS13535 - Rev 1 page 2/10 STTH1002CSF Characteristics Table 4. Dynamic characteristics per diode at Tj = 25°C, unless otherwise specified Symbol trr IRM DS13535 - Rev 1 Parameter Test conditions Reverse recovery time Tj = 25 °C Reverse recovery current Tj = 125 °C Min. Typ. Max. IF = 1 A, dIF /dt = -50 A/µs, VR = 30 V - 28 35 IF = 1 A, dIF /dt = -100 A/µs, VR = 30 V - 21 27 IF = 5 A, dIF/dt = -200 A/µs, VR = 160 V - 6.3 Unit ns A page 3/10 STTH1002CSF Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Conduction losses versus average forward current (per diode) Figure 2. Forward voltage drop versus forward current (typical values, per diode) IF(A) PF(AV)(W) 6 1.0E+02 = 0.05 = 0.1 5 = 0.2 = 0. =1 Tj = 150 °C 1.0E+01 4 Tj = 125 °C 3 1.0E+00 T j = 25 °C T 2 1.0E-01 1 IF(AV)(A) tp =tp/T VF(V) 0 0 1 2 3 4 5 6 Figure 3. Forward voltage drop versus forward current (maximum values, per diode) 1.0E-02 0.0 0.5 1.0 1.5 2.0 Figure 4. Relative variation of thermal impedance junction to case total versus pulse duration Zth(j-c) / Rth(j-c) IF(A) 1.0E+02 1.0 0.9 Tj = 150 °C 1.0E+01 PSMC (TO-277A) 0.8 0.7 Tj = 125 °C 0.6 1.0E+00 0.5 T j = 25 °C 0.4 0.3 1.0E-01 Single pulse 0.2 VF(V) 1.0E-02 0.0 0.5 1.0 1.5 0.1 2.0 Figure 5. Peak reverse recovery current versus dIF/dt (typical values, per diode) 1.E-04 VR = 160 V Tj = 125 °C IF = IF(AV) 1.E-02 1.E-01 1.E+00 t rr (ns) 60 10 1.E-03 Figure 6. Reverse recovery time versus dIF/dt (typical values, per diode) IRM(A) 12 tp(s) 0.0 VR = 160 V Tj = 125 °C IF = IF(AV) 50 8 40 6 30 4 20 10 2 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 DS13535 - Rev 1 100 200 300 400 500 0 100 200 300 400 500 page 4/10 STTH1002CSF Characteristics (curves) Figure 7. Reverse recovery charges versus dIF/dt (typical values, per diode) Figure 8. Reverse recovery softness versus dIF/dt (typical values, per diode) QRR (nC) S FACTOR 0.6 200 160 VR = 160 V Tj = 125 °C IF = IF(AV) VR = 160 V Tj = 125 °C IF = IF(AV) 0.5 0.4 120 0.3 80 0.2 40 0.1 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0.0 100 200 300 400 500 0 Figure 9. Relative variations of dynamic parameters versus junction temperature 200 300 400 500 Figure 10. Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 2.0 1.6 100 100 VR = 160 V IF = IF(AV) Reference: Tj = 125 °C F = 1 MHz Vosc= 30 mV RMS Tj = 25 °C SFACTOR 1.2 0.8 IRM 0.4 QRR 10 T j (°C) VR(V) 0.0 25 50 75 100 1 125 1 10 100 1000 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 70 µm) (PSMC (TO-277A)) Rth(j-a)(°C/W) 120 Epoxy printed circuit board, copper thickness = 70 µm PSMC (TO-277A) 100 80 60 40 20 SCU(cm²) 0 0 DS13535 - Rev 1 1 2 3 4 5 6 7 8 9 10 page 5/10 STTH1002CSF Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 PSMC (TO-277A) package information • • Epoxy meets UL94,V0 Cooling method : by conduction (C) Figure 12. PSMC (TO-277A) package outline DS13535 - Rev 1 page 6/10 STTH1002CSF PSMC (TO-277A) package information Table 5. PSMC (TO-277A) package mechanical data Dimensions Millimeters Ref. Inches (for reference only) Min. Typ. Max. Min. Typ. Max. A 1.00 1.10 1.20 0.039 0.043 0.047 b 1.05 1.20 1.35 0.041 0.047 0.053 b2 1.90 2.05 2.20 0.075 0.081 0.087 b4 0.75 0.029 C 0.15 0.23 0.40 0.006 0.009 0.016 D 4.45 4.60 4.75 0.175 0.181 0.187 D1 4.25 4.40 4.45 0.167 0.173 0.175 D2 3.40 3.60 3.70 0.134 0.142 0.146 E 6.35 6.50 6.65 0.250 0.256 0.262 E1 6.05 6.10 6.15 0.238 0.240 0.242 E2 4.50 4.60 4.70 0.177 0.181 0.185 E3 3.94 1.55 e 2.13 0.084 e1 3.33 0.131 G 1.20 0.047 G1 0.70 0.027 L 0.90 1.05 1.24 0.035 L4 0.02 0.0008 L5 0.02 0.0008 0.041 0.049 Figure 13. PSMC (TO-277A) package footprint in mm (in inches) Note: DS13535 - Rev 1 For package and tape orientation, reel and inner box dimensions and tape outline please check TN1173 page 7/10 STTH1002CSF Ordering information 3 Ordering information Table 6. Ordering information DS13535 - Rev 1 Order code Marking Package Weight Base qty. Delivery mode STTH1002CSF TH1002C PSMC (TO-277A) 90 mg 6000 Tape and Reel page 8/10 STTH1002CSF Revision history Table 7. Document revision history DS13535 - Rev 1 Date Version 29-Oct-2020 1 Changes Initial release. page 9/10 STTH1002CSF IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS13535 - Rev 1 page 10/10