STTH102

STTH102 High efficiency ultrafast diode Main product characteristics IF(AV) VRRM Tj (max) VF(max) trr (max) 1A 200 V 175° C 0.78 V 20 ns A A K K DO-41 STTH102 Features and benefits ■ ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature SMA (JEDEC DO-214AC) STTH102A Description The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 1. Symbol VRRM IF(AV) Repetitive peak reverse voltage SMA Average forward current DO-41 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage SMA Order codes Part Number STTH102A STTH102 STTH102RL Marking U12 STTH102 STTH102 Absolute ratings (limiting values) Parameter Value 200 TL = 148° C δ = 0.5 TL = 130° C δ = 0.5 tp = 10 ms Sinusoidal DO-41 50 -65 to + 175 175 10000 °C °C V/µs 1 40 A Unit V A IFSM Tstg Tj dV/dt November 2006 Rev 5 1/7 www.st.com 7 Characteristics STTH102 1 Table 2. Symbol Rth(j-l) Characteristics Thermal resistance Parameter SMA Junction to lead Lead length = 10 mm DO-41 50 Value 30 °C/W Unit Table 3. Symbol IR (1) Static Electrical Characteristics Parameter Reverse leakage current Tests conditions Tj = 25° C Tj = 125° C Tj = 25° C Tj = 125° C VR = VRRM IF = 700 mA (SMA) IF = 1 A IF = 1 A 0.68 Min. Typ Max. 1 µA 1 25 0.90 0.97 0.78 V Unit VF(2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.130 IF2(RMS) Table 4. Symbol trr tfr VFP Dynamic electrical characteristics Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tj = 25° C Tj = 25° C Tj = 25° C Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1 A IF = 1 A dIF/dt = 50 A/ms VFR = 1.1 x VFmax IF = 1 A dIF/dt = 50 A/ms Min Typ 12 50 1.8 Max 20 Unit ns ns V Figure 1. Average forward power dissipation Figure 2. versus average forward current (SMA) PF(AV)(W) 1.0 Average forward power dissipation versus average forward current (DO-41) δ = 0.1 δ = 0.2 δ = 0.5 PF(AV)(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.2 0.4 0.6 0.8 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 0.9 0.8 δ = 0.05 δ=1 0.7 0.6 0.5 0.4 0.3 δ=1 T T 0.2 0.1 IF(AV)(A) δ=tp/T 1.0 tp 0.0 1.2 0.00 0.25 0.50 IF(AV)(A) 0.75 δ=tp/T 1.00 tp 1.25 2/7 STTH102 Characteristics Figure 3. Average forward current versus Figure 4. ambient temperature (δ = 0.5) (SMA) IF(AV)(A) 1.2 Rth(j-a)=Rth(j-I) Average forward current versus ambient temperature (δ = 0.5) (DO-41) IF(AV)(A) 1.2 Rth(j-a)=Rth(j-I) 1.0 1.0 0.8 0.8 0.6 Rth(j-a)=120°C/W 0.6 Rth(j-a)=110°C/W 0.4 0.4 T 0.2 0.2 T 0.0 0 δ=tp/T 25 tp 50 Tamb(°C) 0.0 75 100 125 150 175 0 δ=tp/T 25 tp 50 Tamb(°C) 75 100 125 150 175 Figure 5. Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) 1.0 0.9 0.8 0.7 Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single pulse δ = 0.2 δ = 0.1 δ = 0.5 Zth(j-c)/Rth(j-c) 0.6 0.5 0.4 δ = 0.5 T 0.3 0.2 δ = 0.2 δ = 0.1 Single pulse T tp(s) 1.E+00 1.E+01 δ=tp/T 1.E+02 tp 1.E+03 0.1 0.0 tp(s) 1.E+00 1.E+01 δ=tp/T 1.E+02 tp 0.0 1.E-01 1.E-01 1.E+03 Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) IFM(A) 100.0 100 C(pF) F=1MHz VOSC=30mVRMS Tj=25°C Tj=125°C (maximum values) 10.0 Tj=125°C (typical values) Tj=25°C (maximum values) 10 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 1 10 VR(V) 100 1000 3/7 Characteristics STTH102 Figure 9. trr(ns) 70 60 50 40 Reverse recovery time versus dIF/dt Figure 10. Peak recovery current versus dIF/dt (90% confidence) (90% confidence) IRM(A) 3.5 IF=1A VR=100V Tj=125°C 3.0 2.5 2.0 IF=1A VR=100V Tj=125°C Tj=125°C Tj=125°C 30 Tj=25°C 1.5 1.0 0.5 Tj=25°C 20 10 dIF/dt(A/µs) 0 1 10 100 1000 0.0 1 10 dIF/dt(A/µs) 100 1000 Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Qrr(nC) 35.0 32.5 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 1 10 Tj=25°C Tj=125°C IF=1A VR=100V Figure 12. Relative variations of dynamic parameters versus junction temperature IRM; trr; Qrr [Tj] / IRM; trr; Qrr [Tj =25°C] 3.5 IF=IF(AV) dIF/dt=200A/µs VR=100V 3.0 QRR 2.5 2.0 trr 1.5 IRM dIF/dt(A/µs) 100 1000 Tj(°C) 1.0 25 50 75 100 125 150 175 Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Rth(j-a)(°C/W) 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 14. Thermal resistance versus lead length (DO-41) Rth(°C/W) 120 110 Rth(j-a) 100 90 80 70 60 50 40 30 20 Rth(j-I) S(cm²) 10 0 5 10 Lleads(mm) 15 20 25 4/7 STTH102 Package information 2 Package information ● Epoxy meets UL94 V0 SMA Dimensions Dimensions E1 Table 5. Ref. Millimeters Min. Max. 2.45 0.20 1.65 0.40 2.90 5.35 4.60 1.50 Inches Min. 0.075 0.002 0.049 0.006 0.089 0.189 0.156 0.030 Max. 0.094 0.008 0.065 0.016 0.114 0.211 0.181 0.059 D A1 A2 b 1.90 0.05 1.25 0.15 2.25 4.80 3.95 0.75 E c A1 D E E1 L C L A2 b Figure 15. Footprint (dimensions in mm) 1.4 2.63 1.4 1.64 5.43 Table 6. DO-41 (Plastic) Package dimensions Dimensions Ref. ØD ØB Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1 Max. 0.205 0.107 A B C A C 4.1 2 25.4 0.712 C D 0.863 0.028 0.034 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH102 3 Ordering information Ordering type STTH102A STTH102 STTH102RL Marking U12 STTH102 STTH102 Package SMA DO-41 DO-41 Weight 0.068 g 0.34 g 0.34 g Base qty 5000 2000 5000 Delivery mode Tape and reel Ammopack Tape and reel 4 Revision history Date Jul-2003 Aug-2004 27-Jun-2005 21-Nov-2006 Revision 2A 3 4 5 Last update. SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm (0.080). SMA and DO-41 datasheets merged Corrected error in title. Reformatted to current standards. Added Table 4. Dynamic electrical characteristics. Updated dimensions table for DO-41 Plastic package. Added cathode bands to package illustrations. Description of Changes 6/7 STTH102 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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