STTH102
Datasheet
200 V - 1 A high efficiency ultrafast diode
A
K
A
A
K
K
DO-41
SMA
Features
•
•
•
•
Very low conduction losses
Negligible switching losses
Low forward voltage drop
High junction temperature
•
ECOPACK®2 compliant
Applications
•
•
•
•
Switching diode
LED Lighting
Auxiliary power supply
Flyback diode
Description
The STTH102 uses ST's new 200 V planar Pt doping technology, and it is specially
suited for switching mode base drive and transistor circuits.
Packaged in SMA and DO-41, the STTH102 is ideal for use as a free wheeling diode
in power supplies and other power switching applications.
Product status
STTH102
Product summary
Symbol
Value
IF(AV)
1A
VRRM
200 V
T j(max.)
175 °C
VF(typ.)
0.68 V
trr(typ.)
12 ns
DS2448 - Rev 6 - December 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STTH102
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(AV)
Average forward current δ = 0.5, square wave
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
SMA
TL = 145 °C
DO-41
TL = 130 °C
SMA
DO-41
Value
Unit
200
V
1
A
40
tp = 10 ms sinusoidal
50
A
-65 to +175
°C
+175
°C
Operating junction temperature
Table 2. Thermal resistance parameter
Symbol
Rth(j-l)
Parameter
Max. value
Junction to lead
Junction to lead
Lead length = 10 mm
SMA
30
DO-41
50
Unit
°C/W
For more information, please refer to the following application note :
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Min.
VR = VRRM
IF = 1 A
Typ.
-
1
1
-
Max.
25
0.97
0.68
0.78
Unit
µA
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.65 x IF(AV) + 0.130 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS2448 - Rev 6
page 2/12
STTH102
Characteristics
Table 4. Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Symbol
Test conditions
Min.
Typ.
Max.
Unit
20
ns
trr
Reverse recovery time
IF = 0.5 A, Irr = 0.25 A, IR = 1 A
-
12
tfr
Forward recovery time
IF = 1 A, dIF/dt = 50 A/ms, VFR = 1.1 VF(max.)
-
50
ns
Forward recovery voltage
IF = 1 A, dIF/dt = 50 A/µs
-
1.8
V
VFP
DS2448 - Rev 6
Parameters
page 3/12
STTH102
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Average forward power dissipation versus
average forward current (SMA)
PF(AV) (W)
Figure 2. Average forward power dissipation versus
average forward current (DO-41)
1.0
1.0
δ = 0.05
0.9
δ = 0.1
δ = 0.2
δ = 0.5
PF(AV) (W)
δ = 0.05
0.9
δ = 0.1
δ = 0.2
δ = 0.5
0.8
0.8
δ=1
0.7
δ=1
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
T
0.2
0.1
IF(AV)(A)
δ =tp/T
0.0
0.0
0.2
0.4
0.6
0.8
1.0
T
0.2
0.1
tp
IF(AV)(A)
δ =tp/T
0.0
1.2
Figure 3. Average forward current versus ambient
temperature (δ = 0.5) (SMA)
0.00
0.25
0.50
0.75
1.00
tp
1.25
Figure 4. (DO-41)Average forward current versus ambient
temperature (δ = 0.5) (DO-41)
IF(AV)(A)
IF(AV)(A)
1.2
1.2
Rth(j-a) =Rt h(j-I)
Rth(j-a) =Rt h(j-I)
1.0
1.0
0.8
0.8
Rth(j-a) =120°C/W
0.6
0.6
Rth(j-a) =110°C/W
0.4
0.4
T
T
0.2
d=tp/T
0.0
0
25
0.2
Tamb (°C)
tp
50
75
100
125
150
175
d=tp/T
0.0
0
DS2448 - Rev 6
25
Tamb (°C)
tp
50
75
100
125
150
175
page 4/12
STTH102
Characteristics (curves)
Figure 5. Relative variation of thermal impedance junction
Figure 6. Relative variation of thermal impedance junction
to ambient versus pulse duration (epoxy printed circuit
to ambient versus pulse duration (DO-41)
board, e(Cu) = 35 μm,recommended pad layout) (SMA)
1.0
Zth (j-c)/Rt h(j-c)
Zth(j-a)/ Rth(j-a)
1.0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.0
1.E-01
t p (s)
Single pulse
1.E+00
1.E+01
1.E+02
t p( s )
Single pulse
0.0
1.E+03
Figure 7. Forward voltage drop versus forward current
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 8. Junction capacitance versus reverse voltage
applied (typical values)
IF (A)
C (pF)
100.0
100
F=1MHz
VOSC=30mV RMS
Tj =25°C
Tj =125°C
(maximum values)
10.0
Tj =125°C
(typical values)
Tj =25°C
(maximum values)
10
1.0
VF ( V)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VR (V)
1.4
1.6
1.8
2.0
2.2
2.4
Figure 9. Relative variations of dynamic parameters
versus junction temperature
3.5
IR M; t rr ; Qrr [Tj ] / IR M; t rr ; Qrr [Tj =25°C ]
1
1
10
100
1000
Figure 10. Thermal resistance junction to ambient versus
copper surface under each lead (typical values)
200
Rth(j-a)(°C/W)
SMA
IF=I F(AV)
dIF/dt=200A/µs
VR=100V
150
3.0
QRR
2.5
100
2.0
Epoxy printed board FR4, eCu = 35 µm
trr
1.5
50
IRM
SCu (cm²)
Tj (°C)
1.0
25
DS2448 - Rev 6
50
75
100
0
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
page 5/12
STTH102
Characteristics (curves)
Figure 11. Thermal resistance versus lead length (DO-41)
Rth(°C/W)
120
Rth(j-a)
100
80
60
Rth(j-I)
40
20
Lleads(mm)
0
5
DS2448 - Rev 6
10
15
20
25
page 6/12
STTH102
Package information
2
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
2.1
DO-41 package information
•
Epoxy meets UL 94, V0
Figure 12. DO-41 package outline
C
C
A
ØD
ØB
Table 5. DO-41 package mechanical data
Dimensions
Ref.
DS2448 - Rev 6
Millimeters
Inches (for reference only)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.07
-
5.20
0.160
-
0.205
B
2.04
-
2.71
0.080
-
0.107
C
25.40
-
1.000
-
D
0.71
-
0.028
-
0.86
0.0034
page 7/12
STTH102
SMA package information
2.2
SMA package information
•
•
Epoxy meets UL94, V0
Cooling method : by conduction (C)
Figure 13. SMA package outline
E1
D
E
A1
C
A2
L
b
Table 6. SMA package mechanical data
Dimensions
Millimeters
Ref.
DS2448 - Rev 6
Inches (for reference only)
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.074
0.097
A2
0.05
0.20
0.001
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.40
0.005
0.016
D
2.25
2.90
0.088
0.115
E
4.80
5.35
0.188
0.211
E1
3.95
4.60
0.155
0.182
L
0.75
1.50
0.029
0.060
page 8/12
STTH102
SMA package information
Figure 14. SMA recommended footprint in mm (inches)
1.4
2.63
1.4
(0.055)
(0.104)
(0.055)
1.64
(0.065)
5.43
(0.214)
DS2448 - Rev 6
page 9/12
STTH102
Ordering information
3
Ordering information
Table 7. Ordering information
DS2448 - Rev 6
Order code
Marking
Package
Weight
Base qty.
Delivery mode
STTH102A
U12
SMA
0.068 g
5000
Tape and reel
STTH102
STTH102
DO-41
0.34 g
2000
Ammopack
STTH102RL
STTH102
DO-41
0.34 g
5000
Tape and reel
page 10/12
STTH102
Revision history
Table 8. Document revision history
Date
DS2448 - Rev 6
Revision Changes
Jul-2003
2A
Last update.
Aug-2004
3
SMA package dimensions update. Reference A1 max. changed from 2.70mm (0.106inc.) to 2.03mm
(0.080). SMA and DO-41 datasheets merged.
27-Jun-2005
4
Corrected error in title.
21-Nov-2006
5
Reformatted to current standards. Added Table 4. Dynamic electrical characteristics. Updated
dimensions table for DO-41 plastic package. Added cathode bands to package illustrations.
05-Dec-2018
6
Add electrical schematics of single diode and ECOPACK®2 compliant.
page 11/12
STTH102
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© 2018 STMicroelectronics – All rights reserved
DS2448 - Rev 6
page 12/12
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