STTH110RL

® STTH110/A HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s s 1A 1000 V 175 °C 1.42 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH110 DESCRIPTION The STTH110, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. SMA STTH110A ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 100°C Tl = 125°C IFSM Forward surge current t = 8.3 ms δ =0.5 δ =0.5 DO-41 SMA DO-41 SMA Tstg Tj Storage temperature range Maximum operating junction temperature Value 1000 700 1 1 20 18 - 50 + 175 + 175 °C °C A Unit V V A January 2003 - Ed: 1 1/5 STTH110/A THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter L = 10 mm DO-41 SMA Rth (j-a) Junction to ambient L = 10 mm DO-41 Value 45 30 110 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Tests conditions VR = 1000V Tj = 25°C Tj = 125°C VF Forward voltage drop IF = 1 A Tj = 25°C Tj = 150°C To evaluate the maximum conduction losses use the following equation : P = 1.20 x IF(AV) + 0.225 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25°C Tj = 25°C Min. Typ. Max. 75 300 18 Unit ns ns V 0.98 Min. Typ. Max. 10 50 1.7 1.42 V Unit µA 2/5 STTH110/A Fig. 1: Conduction losses versus average current. P(W) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 100.0 Fig. 2: Forward voltage drop versus forward current. IFM(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 Tj=150°C (maximum values) δ=1 10.0 Tj=150°C (typical values) Tj=25°C (maximum values) T IF(AV)(A) δ=tp/T 0.9 1.0 tp 0.1 1.1 1.2 0.0 0.5 1.0 1.5 VFM(V) 2.0 2.5 3.0 3.5 4.0 4.5 Fig. 3-1: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Lleads = 10mm) (DO-41). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-01 1.E+00 1.E+01 δ = 0.2 δ = 0.1 Single pulse δ = 0.5 Fig. 3-2: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4) (SMA). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 δ = 0.2 δ = 0.1 δ = 0.5 T 0.2 0.1 T tp(s) δ=tp/T 1.E+02 tp 0.0 1.E+03 Single pulse tp(s) 1.E+00 1.E+01 δ=tp/T 1.E+02 tp 1.E+03 1.E-01 Fig. 4-1: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (DO-41). Rth(j-a)(°C/W) 120 110 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 Fig. 4-2: Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (SMA). Rth(j-a)(°C/W) 140 130 120 110 100 90 80 70 60 50 40 30 20 S(cm²) 10 0 0.0 0.5 1.0 1.5 2.0 S(cm²) 2.5 3.0 3.5 4.0 4.5 5.0 3/5 STTH110/A PACKAGE MECHANICAL DATA SMA DIMENSIONS E1 REF. Millimeters Min. Max. 2.70 0.20 1.65 0.41 5.60 4.60 2.95 1.60 Inches Min. 0.075 0.002 0.049 0.006 0.189 0.156 0.089 0.030 Max. 0.106 0.008 0.065 0.016 0.220 0.181 0.116 0.063 D A1 A2 b 1.90 0.05 1.25 0.15 4.80 3.95 2.25 0.75 E c A1 E E1 b C L A2 D L FOOTPRINT (in millimeters) 1.65 1.45 2.40 1.45 4/5 STTH110/A PACKAGE MECHANICAL DATA DO-41 DIMENSIONS C A C OB / REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A B OD / OD / 4.07 2.04 28 0.712 C D 0.863 0.028 0.034 Ordering code STTH110 STTH110A STTH110RL s Marking STTH110 H10 STTH110 Package DO-41 SMA DO-41 Weight 0.34 g 0.068 g 0.34 g Base qty 2000 5000 5000 Delivery mode Ammopack Tape & reel Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5