STTH12003TV

® STTH12003TV HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 2 x 60 A 300 V 150 °C 1V 70 ns K2 K1 A1 A1 A2 K1 K2 FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY INSULATED PACKAGE: ISOTOP Insulated voltage: 2500 VRMS Capacitance: < 45 pF LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLIFIED LAYOUT DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature Tc = 85°C δ = 0.5 Per diode Per device Value 300 150 60 120 600 5 - 55 to + 150 150 Unit V A A A A °C °C A2 ISOTOP™ tp = 10 ms sinusoidal tp = 100 µs square ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed: 4D 1/5 STTH12003TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25°C Tj = 125°C IF = 60 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0042 x IF2(RMS) 0.85 0.12 Min. Typ. Max. 120 1.2 1.25 1 Unit µA mA V Parameter Junction to case Per diode Total Coupling Value 0.8 0.45 0.1 Unit °C/W VF ** RECOVERY CHARACTERISTICS Symbol trr IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM IF = 60 A VFR = 1.1 x VF max. Vcc = 200 V IF = 60 A dIF/dt = 200 A/µs Tests conditions Irr = 0.25 A dIF/dt = - 50 A/µs IR = 1A VR = 30 V Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 125°C 0.3 14 Min. Typ. Max. 55 70 600 5 ns V A Unit ns dIF/dt = 200 A/µs 2/5 STTH12003TV Fig. 1: Conduction losses versus average current (per diode). P1(W) 90 80 70 60 50 40 30 20 10 0 δ = 0.1 δ = 0.05 δ = 0.2 δ = 0.5 Fig. 2: Forward voltage drop versus forward current (per diode). IFM(A) 600 Tj=125°C Typical values Tj=25°C Maximum values 100 δ=1 Tj=125°C Maximum values 10 T IF(av) (A) 0 10 20 30 40 50 δ=tp/T tp 60 70 80 VFM(V) 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 Single pulse δ = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IRM(A) 30 25 20 15 IF=0.5*IF(a v) VR=200V Tj=125 °C IF=IF(av) IF=2*IF(a v) δ = 0.2 δ = 0.1 10 T 5 tp(s) 1E-2 1E-1 δ=tp/T tp 0.0 1E-3 1E+0 1E+1 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). trr(ns) 200 180 160 140 120 100 80 60 40 20 0 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor 0.6 VR=200V Tj=125 °C IF=2*IF(av) 0.5 0.4 VR=200V Tj=125 °C IF=IF(av) 0.3 0.2 IF=0.5*IF(a v) dIF/dt(A/µs) 0.1 0.0 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 50 100 150 200 250 300 350 400 450 500 3/5 STTH12003TV Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference:Tj = 125°C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode). VFP(V) 10 IF=IF(av) Tj=125 °C S factor 8 6 IRM 4 2 Tj(°C) 50 75 100 125 0 0 dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 500 400 300 200 100 dIF/dt(A/µs) IF=IF(av) VFR=1.1*VFmax Tj=125 °C 0 0 50 100 150 200 250 300 350 400 450 500 4/5 STTH12003TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Ordering code Marking STTH12003TV1 STTH12003TV Package ISOTOP Weight 27g without screws Base qty 10 with screws Delivery mode Tube Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5