STTH12010TV2

STTH12010TV Ultrafast recovery - high voltage diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 2 x 60 A 1000 V 150° C 1.30 V 49 ns A1 K1 A1 K2 A2 K2 K1 A2 A1 A1 K1 K2 K1 Features and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package – Electrical insulation = 2500 VRMS Capacitance = 45 pF A2 K2 ISOTOP STTH12010TV1 A2 ISOTOP STTH12010TV2 Order codes Part Number STTH12010TV1 STTH12010TV2 Marking STTH12010TV1 STTH12010TV2 Description The compromise-free, high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. These demanding applications include industrial power supplies, motor control, and similar industrial systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of the equipment March 2006 Rev 1 1/8 www.st.com 8 Characteristics STTH12010TV 1 Table 1. Symbol VRRM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Characteristics Absolute ratings (limiting values per diode at 25° C, unless otherwise specified) Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Repetitive peak forward current Per diode tp = 5 µs, F = 5 kHz square Tc = 50° C Value 1000 150 60 750 400 -65 to + 150 150 Unit V A A A A °C °C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Maximum operating junction temperature Table 2. Thermal parameters Symbol Rth(j-c) Rth(c) Parameter Per diode Junction to case Total Coupling thermal resistance 0.45 0.1 °C/W Value 0.80 Unit When the diodes are used simultaneously: ∆Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM Min. Typ Max. 20 µA 20 200 2.0 IF = 60 A 1.40 1.30 1.80 1.70 V Unit VF(2) Forward voltage drop Tj = 100° C Tj = 150° C 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 1.3 x IF(AV) + 0.0067 IF2(RMS) 2/8 STTH12010TV Table 4. Symbol Characteristics Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25° C Min. Typ Max. 115 61 49 31 1 750 4 ns V 80 65 40 A ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/µs, VR = 30 V, Tj = 25° C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25° C IRM S tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 60 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C IF = 60 A, dIF/dt = -200 A/µs, VR = 600 V, Tj = 125° C dIF/dt = 100 A/µs IF = 60 A VFR = 1.5 x VFmax, Tj = 25° C IF = 60 A, dIF/dt = 100 A/µs, Tj = 25° C Figure 1. P(W) 140 Conduction losses versus average current =0.05 =0.1 =0.2 =0.5 =1 Figure 2. IFM(A) 200 180 160 Forward voltage drop versus forward current 120 100 80 60 40 T Tj=150°C (Maximum values) 140 120 100 80 60 40 50 60 70 80 Tj=150°C (Typical values) Tj=25°C (Maximum values) 20 IF(AV)(A) 0 0 10 20 30 40 20 0 0.0 0.5 1.0 1.5 2.0 VFM(V) 2.5 3.0 3.5 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-03 1.E-02 1.E-01 Single pulse IRM(A) 70 60 50 40 30 20 10 IF=0.5 x IF(AV) VR=600V Tj=125°C IF= IF(AV) IF= 2 x IF(AV) tp(s) 1.E+00 1.E+01 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 3/8 Characteristics STTH12010TV Figure 5. trr(ns) 1000 900 800 700 600 500 400 300 200 100 0 0 50 Reverse recovery time versus dIF/dt (typical values) VR=600V Tj=125°C IF= 2 x IF(AV) Figure 6. Qrr(µC) 10 Reverse recovery charges versus dIF/dt (typical values) IF= 2 x IF(AV) VR=600V Tj=125°C 8 IF= IF(AV) 6 IF= IF(AV ) 4 IF=0.5 x IF(AV) 2 dIF/dt(A/µs) 100 150 200 250 300 350 IF=0.5 x IF(AV) dIF/dt(A/µs) 0 500 400 450 0 50 100 150 200 250 300 350 400 450 500 Figure 7. Softness factor versus dIF/dt (typical values) Figure 8. Relative variations of dynamic parameters versus junction temperature IF = IF(AV) VR=600V Reference: Tj=125°C S factor 1.50 IF = 2 x IF(AV) VR=600V Tj=125°C 2.0 1.8 1.6 1.4 1.2 Sfactor 1.25 1.00 1.0 0.8 0.6 IRM 0.75 0.4 0.2 QRR tRR 0.50 0 50 100 150 200 dIF/dt(A/µs) 250 300 350 400 450 500 Tj(°C) 75 100 125 0.0 25 50 4/8 STTH12010TV Characteristics Figure 9. VFP(V) 20 18 16 14 12 10 8 6 4 2 0 0 IF = IF(AV) Tj=125°C Transient peak forward voltage versus dIF/dt (typical values) Figure 10. Forward recovery time versus dIF/dt (typical values) 1100 1000 900 800 700 600 500 400 tfr(ns) IF = IF(AV) VFR = 1.5 x V F max. Tj=125°C dIF/dt(A/µs) 100 200 300 400 500 300 200 0 100 200 dIF/dt(A/µs) 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/8 Package information STTH12010TV 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 5. ISOTOP dimensions DIMENSIONS E G2 C REF. Millimeters Min. Max 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 A A A1 C2 E2 F1 F 11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85 A1 B C C2 D D1 P1 E E1 D S G D1 E2 G 24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30 5.00 4.30 4.40 30.30 0.976 typ. 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 B G1 G2 F ØP G1 E1 F1 P P1 S In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8 STTH12010TV Ordering information 3 Ordering information Part Number STTH12010TV1 STTH12010TV2 Marking STTH12010TV1 STTH12010TV2 Package ISOTOP ISOTOP Weight 27 g 27 g Base qty 10 10 Delivery mode Tube Tube 4 Revision history Date 02-Mar-2006 Revision 1 First issue. Description of Changes 7/8 STTH12010TV Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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