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STTH12T06DI

STTH12T06DI

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    TO220AC

  • 描述:

    DIODE GEN PURP 600V 12A TO220AC

  • 数据手册
  • 价格&库存
STTH12T06DI 数据手册
STTH12T06 600 V tandem extra fast diode Datasheet − production data Features • High voltage rectifier • Tandem diodes in series • Very low switching losses A K • Insulated device with internal ceramic • Equal thermal conditions for both 300 V diodes • Static and dynamic equilibrium of internal diodes are warranted by design • Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms A K TO-220AC ins STTH12T06DI Description Table 1. Device summary Symbol Value IF(AV) 12 A VRRM 600 V trr (typ) 15 ns IRM (typ) 2.3 A VF (typ) 2.05 V IFRM 65 A Tj (max) 175 °C May 2013 This is information on a product in full production. This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switchinglosses with a minimized QRR (6.5 nC) that makes it perfect for use in circuits working in hardswitching mode. In particular the VF/QRR trade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio. The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints. Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits. Doc ID024431 Rev1 1/9 www.st.com 9 Characteristics 1 STTH12T06 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) Forward rms current Value Tj from 25 to 150 °C 600 Tj = -40 °C 550 Unit V 22 A IF(AV) Average forward current, δ = 0.5 Tc = 75 °C 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 90 A IFRM Repetitive peak forward current Tc = 75 °C, δ = 0.1 65 A Tstg Storage temperature range -65 to +175 °C Operating junction temperature -40 to +175 °C Value Unit 2.4 °C/W Tj Table 3. Thermal parameters Symbol Rth(j-c) Parameter Junction to case Table 4. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop Test conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 150 °C Min. Max. Unit 20 VR = VRRM µA 40 400 2.95 IF = 12A 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.75 x IF(AV) + 0.0667 x IF2(RMS) 2/9 Typ. Doc ID024431 Rev1 V 2.05 2.55 STTH12T06 Characteristics Table 5. Dynamic characteristics Symbol Test conditions Parameter IF = 1 A, VR = 30 V, dIF/dt = -50 A/µs 25 33 IF = 12 A, VR = 400 V, dIF/dt = -200 A/µs 15 20 IF = 12 A, VR = 400 V, dIF/dt = -200 A/µs 23 30 Tj = 25 °C 0.83 1.1 Tj = 125 °C 2.3 3 Tj = 25 °C trr Reverse recovery time Tj = 125 °C IRM Reverse recovery current S Reverse recovery charge 6.5 Tj = 125 °C 30 nC PF(AV)(W) Figure 2. Forward voltage drop versus forward current (typical values) 100.0 45 d =0.05 40 d =0.1 d =0.5 d =0.2 0.7 Tj = 25 °C Figure 1. Average forward power dissipation versus average forward current 50 1.4 IF = 12 A, VR = 400 V, dIF/dt = -200 A/µs Tj = 125 °C QRR ns A Tj = 25 °C Softness factor Min. Typ. Max. Unit IFM(A) d =1 Tj=150 °C 35 Tj=25 °C 10.0 30 25 Tj=125 °C 20 1.0 15 T 10 5 IF(AV)(A) d=tp/T tp VFM(V) 0 0 2 4 6 8 10 12 14 16 Figure 3. Relative variation of thermal impedance, junction to case, versus pulse duration 0.1 0.0 Z t h (j-c)/Rt h (j-c) 8 0.9 7 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 IRM(A) VR=400 V Tj=125 °C 6 0.7 IF=2 x IF(AV) 5 0.6 IF=IF(AV) 4 0.5 0.4 IF=0.5 x IF(AV) 3 0.3 0.2 1.0 Figure 4. Peak reverse recovery current versus dIF/dt (typical values) 1.0 0.8 0.5 2 Single pulse 0.1 tp(s) 0.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1 dIF/dt(A/µs) 0 0 100 Doc ID024431 Rev1 200 300 400 500 600 700 800 900 1000 3/9 Characteristics STTH12T06 Figure 5. Reverse recovery time versus dIF/dt (typical values) Figure 6. Reverse recovery charges versus dIF/dt (typical values) t RR(ns) QRR(nC) 50 60 VR=400 V Tj=125 °C VR=400 V Tj=125 °C 50 40 IF=2 x IF(AV) 40 30 IF=IF(AV) IF=2 x IF(AV) 20 30 IF=0.5 x IF(AV) IF=0.5 x IF(AV) 20 IF=IF(AV) 10 10 dIF/dt(A/µs) 0 0 100 200 300 400 500 600 700 800 900 1000 Figure 7. Reverse recovery softness factor versus dIF/dt (typical values) SFACTOR dIF/dt(A/µs) 0 0 100 200 300 400 500 600 700 800 900 1000 Figure 8. Relative variations of dynamic parameters versus junction temperature 2.50 1.6 IF=IF(AV) VR=400 V Reference: Tj=125 °C 2.25 IF=IF(AV) VR=400 V Tj=125 °C 2.00 1.2 SFACTOR 1.75 1.50 1.25 0.8 1.00 0.75 0.4 IRM 0.50 0.25 dIF/dt(A/µs) 0.0 0 100 200 300 400 500 600 700 800 900 QRR Tj (°C) 0.00 25 1000 Figure 9. Junction capacitance versus reverse voltage applied (typical values) C(pF) 75 100 125 Figure 10. Relative variation of non-repetitive peak surge forward current versus pulse duration 4.0 100 50 IFSM(tp)/IFSM (10ms) sinusoidal waveform F=1 MHz VOSC=30 mVRMS Tj=25 °C 3.5 3.0 2.5 2.0 1.5 VR (V) 10 4/9 tp (ms) , 1 10 100 1000 1.0 0.1 Doc ID024431 Rev1 1.0 10.0 STTH12T06 Characteristics Figure 11. Relative variation of non-repetitive peak surge forward current versus initial junction temperature (sinusoidal waveform) 1.2 IFSM(Tj)/IFSM(25 °C) 1.0 0.8 0.6 0.4 0.2 Tj (°C) 0.0 25 50 75 100 125 Doc ID024431 Rev1 150 175 5/9 Package information 2 STTH12T06 Package information • Epoxy meets UL94, V0 • Cooling method: by conduction (C) • Recommended torque: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 12. T0-220AC ins dimension definitions C B ØI b2 L F A I4 c2 a1 l2 a2 M b1 e 6/9 Doc ID024431 Rev1 c1 STTH12T06 Package information Table 6. T0-220AC ins dimension values Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.598 3.75 Typ. Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.80 0.622 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 M 16.40 2.60 Doc ID024431 Rev1 0.646 0.661 0.102 7/9 Ordering information 3 STTH12T06 Ordering information Table 7. Ordering information 4 Order code Marking Package Weight STTH12T06DI STTH12T06DI TO-220AC ins 2.30 g Base qty Delivery mode 50 Revision history Table 8. Document revision history 8/9 Date Revision 13-May-2013 1 Changes Initial release Doc ID024431 Rev1 Tube STTH12T06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2013 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID024431 Rev1 9/9
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