STTH1506DPI

® STTH1506DPI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) trr (typ.) 15 A 600 V 150 °C 2.4 V 4.8 A 16 ns 1 2 1 2 FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET AND FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN PACKAGE CAPACITANCE: C=16pF s s s s s s DOP3I (insulated) DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFSM Ipeak Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Peak current waveform Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal δ = 0.15 Tc = 120°C Value 600 26 130 35 -65 +150 + 150 Unit V A A A °C °C October 2003 - Ed: 2A 1/5 STTH1506DPI THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case Test conditions Value 1.6 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 150°C Pulse test: * tp = 100ms, δ < 2% ** tp = 380µs, δ < 2% Min. Typ. Max. 20 Unit µA 30 200 3.6 V VF** 1.95 2.4 To evaluate the maximum conduction losses use the following equation: P = 1.7 x IF(AV) + 0.047 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A IF = 1 A dIF/dt = - 50A/µs VR = 30 V IRM S Qrr Reverse recovery current Reverse recovery softness factor Reverse recovery charges VR = 400 V IF = 15 A dIF/dt = -200 A/µs Tj = 125°C 4.8 0.4 80 Tj = 25°C Min. Typ. 16 35 6.0 A nC Max. Unit ns TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Forward recovery time Forward recovery voltage Tests Conditions IF = 15 A dIF/dt = 100A/µs, VFR = 1.1 x VFmax IF = 15 A dIF/dt = 100 A/µs Tj = 25°C Tj = 25°C Min. Typ. Max. 200 6 Unit ns V 2/5 STTH1506DPI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) δ = 0.1 δ = 0.05 δ=1 δ = 0.2 130 P(W) 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 δ = 0.5 120 110 100 90 80 70 60 50 40 Tj=25°C (maximum values) Tj=125°C (typical values) Tj=125°C (maximum values) T 30 20 IF(AV)(A) δ=tp/T tp 10 0 0 1 2 3 4 VFM(V) 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 δ = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (typical values). IRM(A) 20 18 16 14 12 10 IF=0.5 x IF(AV) VR=400V Tj=125°C IF=IF(AV) IF=2 x IF(AV) 0.6 0.5 0.4 0.3 0.2 Single pulse δ = 0.2 δ = 0.1 IF=0.25 x IF(AV) 8 6 T 4 2 0 0.1 0.0 1.E-03 tp(s) 1.E-02 1.E-01 δ=tp/T tp 1.E+00 dIF/dt(A/µs) 0 200 400 600 800 1000 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 70 VR=400V Tj=125°C Fig. 6: Reverse recovery charges versus dIF/dt (typical values). Qrr(nC) 240 IF=2 x IF(AV) 220 200 180 60 50 IF=2 x IF(AV) VR=400V Tj=125°C IF=IF(AV) 160 IF=IF(AV) IF=0.5 x IF(AV) 40 30 20 10 140 120 100 80 60 40 IF=0.5 x IF(AV) dIF/dt(A/µs) 0 0 200 400 600 800 1000 20 0 0 200 dIF/dt(A/µs) 400 600 800 1000 3/5 STTH1506DPI Fig. 7: Softness factor versus dIF/dt (typical values). S 0.80 IF=IF(AV) VR=400V Tj=125°C Fig. 8: Relative variations of dynamic parameters versus junction temperature. 2.50 2.25 2.00 S IF=IF(AV) VR=400V Reference: Tj=125°C 0.70 1.75 0.60 1.50 1.25 1.00 0.50 0.40 0.75 0.50 IRM 0.30 0.25 dIF/dt(A/µs) 0.20 0 200 400 600 800 1000 Tj(°C) 25 50 75 100 125 0.00 Fig. 9: Transient peak forward voltage versus dIF/dt (typical values). VFP(V) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) Tj=125°C Fig. 10: Forward recovery time versus dIF/dt (typical values). tfr(ns) 350 300 250 200 150 100 50 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C dIF/dt(A/µs) 0 0 100 dIF/dt(A/µs) 200 300 400 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 4/5 STTH1506DPI PACKAGE MECHANICAL DATA DOP3I DIMENSIONS REF. Millimeters Min. A B C D E F G H K L N P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 3.4 4.08 10.8 1.20 Max. 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 3.65 4.17 11.3 1.40 Inches Min. 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.134 0.161 0.425 0.047 Max. 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.144 0.164 0.444 0.055 4.60 typ. 0.181 typ. Ordering code STTH1506DPI s Marking STTH1506DPI Package DOP3I Weight 4.46 g. Base qty 30 Delivery mode Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. 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