®
STTH1506TPI
Tandem 600V Hyperfast Rectifer
MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 15 A 600 V (in series) 150 °C 2.6 V 4.8 A
1 2 3
1
FEATURES AND BENEFITS Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink. Matched diodes for typical PFC application without need for voltage balance network. C = 7pF
s s s s s s
2
3
TOP3I (insulated)
DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.
ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 26 130 -65 +150 + 150 Unit V A A °C °C
TM: TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 1A
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THERMAL AND POWER DATA Symbol Rth (j-c) Rth (c) Rth (j-c) P1 Junction to case Conduction power dissipation for both diodes Parameter Junction to case Test conditions Per diode Coupling Total IF(AV) = 15 A Tc = 70°C δ = 0.5 Value 2.9 0.3 1.6 50 W Unit °C/W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 125°C
Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2%
Min.
Typ.
Max. 20
Unit µA
30
200 3.6 V
VF**
2.1
2.6
To evaluate the maximum conduction losses use the following equation: P = 1.8 x IF(AV) + 0.053 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Parameter Reverse recovery time Tests Conditions IF = 0.5 A Irr = 0.25A IR = 1 A IF = 1 A dIF/dt = - 50A/µs VR = 30 V IRM Sfactor Reverse recovery current VR = 400 V IF = 15 A dIF/dt = -200 A/µs Tj = 125°C 4.8 0.4 Tj = 25°C Min. Typ. 16 35 6.0 A Max. Unit ns
TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP Parameter Forward recovery time Forward recovery voltage Tests Conditions IF = 15 A dIF/dt = 100A/µs, VFR = 1.1 x VFmax IF = 15 A dIF/dt = 100 A/µs Tj = 25°C Tj = 25°C Min. Typ. Max. 200 6 Unit ns V
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Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current.
IFM(A)
δ = 0.1 δ = 0.05 δ=1 δ = 0.2
P(W)
55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20
T
130
δ = 0.5
120 110 100 90 80 70 60 50 40 30 20
tp
Tj=25°C (Maximum values) Tj=125°C (Typical values) Tjj=125°C (Maximum values) (Maximum values)
IF(AV)(A)
δ=tp/T
10 0 0 1 2 3
VFM(V)
4 5 6 7 8
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2
Single pulse δ = 0.2 δ = 0.1 δ = 0.5
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A)
IF=2 x IF(AV) VR=400V Tj=125°C IF=IF(AV)
22 20 18 16 14 12
IF=0.5 x IF(AV)
IF=0.25 x IF(AV)
10 8
T
6 4
0.1 0.0 1.E-03
tp(s)
1.E-02 1.E-01
δ=tp/T
tp
2 0 0 200
dIF/dt(A/µs)
400 600 800 1000
1.E+00
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns)
100 90 80 70 60 50 40 30 20 10 0 0 200 400 600 800 1000
IF=IF(AV) IF=0.5 x IF(AV) IF=2 x IF(AV) VR=400V Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence).
Qrr(nC)
350
VR=400V Tj=125°C
300 250 200 150 100 50
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
dIF/dt(A/µs)
0 0 200
dIF/dt(A/µs)
400 600 800 1000
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Fig. 7: Softness factor versus dIF/dt (typical values).
S factor
0.80
IF=IF(AV) VR=400V Tj=125°C
Fig. 8: Relative variations of dynamic parameters versus junction temperature.
2.50 2.25 2.00 1.75
IF=IF(AV) VR=400V Reference: Tj=125°C
0.70
S factor
0.60
1.50 1.25 1.00
0.50
0.40
0.75 0.50
IRM
0.30
0.25
Tj(°C)
25 50 75 100 125
dIF/dt(A/µs)
0.20 0 200 400 600 800 1000
0.00
Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V)
16
IF=IF(AV) Tj=125°C
Fig. 10: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns)
400 350 300 250 200 150 100
IF=IF(AV) VFR=1.1 x VF max. Tj=125°C
14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
50 0 0 100
dIF/dt(A/µs)
200 300 400 500
Fig. 11: Junction capacitance versus reverse voltage applied (typical values).
C(pF)
1000
F=1MHz VOSC=30mV Tj=25°C
100
VR(V)
10 1 10 100 1000
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PACKAGE MECHANICAL DATA TOP3I DIMENSIONS REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max. A B C D E F G H J K L P R 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 5.4 3.4 4.08 1.20 4.60 4.6 0.173 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 0.222 0.144 0.164 0.055 0.181
1.55 0.057 15.60 0.565 0.7 2.9 0.020 0.106
16.5 0.622 21.1 0.815 15.5 0.594 5.65 0.213 3.65 0.134 4.17 0.161 1.40 0.047
Ordering code STTH1506TPI
s
Marking STTH1506TPI
Package TOP3I
Weight 4.46 g.
Base qty 30
Delivery mode Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5
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